Anomaly of the current self-oscillation frequency in the sequential tunneling of a doped GaAs/AlAs superlattice

An anomalous behavior of the current self-oscillation frequency is observed in the dynamic de voltage bands, emerging from each sawtoothlike branch of the current-voltage characteristic of a doped GaAs/A1As superlattice in the transition process from static to dynamic electric field domain formations. Varying the applied de voltage at a fixed temperature, we find that the frequency increases while the averaged current decreases. Inside each voltage band, the frequency has a strong voltage dependence in the temperature range where the averaged current changes with the applied de voltage. This dependence can be understood in terms of motion of the system along a limit cycle.

Current self-oscillation induced by a transverse magnetic field in a doped GaAs/AlAs superlattice

We investigate the influence of a transverse magnetic field on the current-voltage characteristics of a doped GaAs/AlAs superlattice at 1.6 K. The current transport regimes-stable electric field domain formation and current selfoscillation-are observed with increasing transverse magnetic field up to 13 T. Magnetic-field-induced redistribution of electron momentum and energy is identified as the mechanism triggering the switching over of one process to another lending to a change in the dependence of the effective electron drift velocity on electric field. Simulation yields excellent agreement with observed results.

THIN-FILM BIPBSRCACUO DIRECT-CURRENT SUPERCONDUCTING QUANTUM INTERFERING DEVICES OPERATING AT 78-K

Direct current SQUIDs (superconducting quantum interference devices) have been successfully fabricated by using a Pb-doped BiSrCaCuO superconducting thin film made by mixed evaporation of a single source composed of related components with a resistance heater. The dc SQUID comprises a square washer with a small hole. These SQUIDs show perfectly periodic voltage-flux characteristics without magnetic shield, that is, typically, the flux noise and energy resolution at a frequency range from dc to 1 Hz and at 78 K being 1.7 x 10(-3) PHI-0/ square-root Hz and 3.6 x 10(-26) J/Hz, respectively. Meanwhile, we have found out that one of the SQUIDs still was able to operate on flux-locked mode without bias currents and showed voltage-flux second harmonic characteristics. This phenomenon is not well understood, but it may be related to I-V (current-voltage) characteristics of the dc SQUID.

Phosphorylation of the voltage-gated potassium channel Kv2.1 by AMP-activated protein kinase regulates membrane excitability

Firing of action potentials in excitable cells accelerates ATP turnover. The voltage-gated potassium channel Kv2.1 regulates action potential frequency in central neurons, whereas the ubiquitous cellular energy sensor AMP-activated protein kinase (AMPK) is activated by ATP depletion and protects cells by switching off energy-consuming processes. We show that treatment of HEK293 cells expressing Kv2.1 with the AMPK activator A-769662 caused hyperpolarizing shifts in the current-voltage relationship for channel activation and inactivation. We identified two sites (S440 and S537) directly phosphorylated on Kv2.1 by AMPK and, using phosphospecific antibodies and quantitative mass spectrometry, show that phosphorylation of both sites increased in A-769662-treated cells. Effects of A-769662 were abolished in cells expressing Kv2.1 with S440A but not with S537A substitutions, suggesting that phosphorylation of S440 was responsible for these effects. Identical shifts in voltage gating were observed after introducing into cells, via the patch pipette, recombinant AMPK rendered active but phosphatase-resistant by thiophosphorylation. Ionomycin caused changes in Kv2.1 gating very similar to those caused by A-769662 but acted via a different mechanism involving Kv2.1 dephosphorylation. In cultured rat hippocampal neurons, A-769662 caused hyperpolarizing shifts in voltage gating similar to those in HEK293 cells, effects that were abolished by intracellular dialysis with Kv2.1 antibodies. When active thiophosphorylated AMPK was introduced into cultured neurons via the patch pipette, a progressive, time-dependent decrease in the frequency of evoked action potentials was observed. Our results suggest that activation of AMPK in neurons during conditions of metabolic stress exerts a protective role by reducing neuronal excitability and thus conserving energy.

Thickness dependence of leakage current in BaBi2Ta2O9 thin films

BaBi2Ta2O9 thin films having a layered structure were fabricated by metalorganic solution deposition technique. The films exhibited good structural, dielectric, and insulating properties. The room temperature resistivity was found to be in the range of 10(12)-10(14) Omega cm up to 4 V corresponding to a field of 200 kV/cm across the capacitor for films annealed in the temperature range of 500-700 degrees C. The current-voltage (I-V) characteristics as a function of thickness for films annealed at 700 degrees C for 1 h, indicated bulk limited conduction and the log(I) vs V-1/2 characteristics suggested a space-charge-limited conduction mechanism. The capacitance-voltage measurements on films in a metal-insulator-semiconductor configuration indicated good Si/BaBi2Ta2O9 interface characteristics and a SiO2 thickness of similar to 5 nm was measured and calculated. (C) 1999 American Institute of Physics. [S0003-6951(99)00830-X].

A new class of neurotoxin from wasp venom slows inactivation of sodium current

The effects of alpha-pompilidotoxin (alpha-PMTX), a new neurotoxin isolated from the venom of a solitary wasp, were studied on the neuromuscular synapses in lobster walking leg and the rat trigeminal ganglion (TG) neurons. Paired intracellular recordings from the presynaptic axon terminals and the innervating lobster leg muscles revealed that alpha-PMTX induced long bursts of action potentials in the presynaptic axon, which resulted in facilitated excitatory and inhibitory synaptic transmission. The action or alpha-PMTX was distinct from that of other known facilitatory presynaptic toxins, including sea anemone toxins and alpha-scorpion toxins, which modify the fast inactivation of Na+ current. We further characterized the action of alpha-PMTX on Na+ channels by whole-cell recordings from rat trigeminal neurons. We found that alpha-PMTX stowed the Na+ channels inactivation process without changing the peak current-voltage relationship or the activation time course of tetrodotoxin (TTX)-sensitive Na+ currents, and that alpha-PMTX had voltage-dependent effects on the rate of recovery from Na+ current inactivation and deactivating tail currents. The results suggest that alpha-PMTX slows or blocks conformational changes required for fast inactivation of the Na+ channels on the extracellular surface. The simple structure of alpha-PMTX, consisting of 13 amino acids, would be advantageous for understanding the functional architecture of Na+ channel protein.

Low voltage electroluminescence of terbium- and thulium-doped zinc oxide films

Strong interest in developing technology for visual information. stimulates research for thin film electroluminescent devices. Here, for the first time, we report that thulium- and terbium-doped zinc-oxide films are suitable for electroluminescence applications. Two different devices were assembled as lTO/LiF/ZnO:RE/LiF/Al or ITO/SiO2/ZnO:RE/SiO2/Al, where ZnO:RE is a film of zinc oxide containing 10 at% of Tb3+ or Tm3+. Electroluminescence spectra show that besides a broad emission band with maximum around 650 nm assigned to ZnO, also emission lines from Tb3+ at 484 nm (D-5(4) -> F-7(6)), 543 nm (D-5(4) -> F-7(6)), and 589 nm (D-5(4) -> F-7(4)), or from Tm3+ at 478 nm ((1)G(4) -> H-3(6)), and 511 mn (D-1(2) -> H-3(5)) were detected. Intensity of emission as function of applied voltage and current-voltage characteristic are shown and discussed. (c) 2005 Elsevier B.V. All rights reserved.

New 12kW three-phase 18-pulse high power factor AC-DC converter with regulated output voltage for rectifier units

This work presents a new high power factor three-phase rectifier based on a Y-connected differential autotransformer with reduced kVA and 18-pulse input current followed by three DC-DC boost converters. The topology provides a regulated output voltage and natural three-phase input power factor correction. The lowest input current harmonic components are the 17th and the 19th. Three boost converters, with constant input currents and regulated parallel connected output voltages are used to process 4kW each one. Analytical results from Fourier analyses of winding currents and the vector diagram of winding voltages are presented. Simulation results to verify the proposed concept and experimental results are shown in the paper.

An AC voltage regulator with high-power-factor, and control using a FPGA device

This paper presents the analysis, design, simulation, and experimental results for a high frequency high Power-Factor (PF) AC (Alternate Current) voltage regulator, using a Sepic converter as power stage. The control technique employed to impose a sinusoidal input current waveform, with low Total Harmonic Distortion (THD), is the sinusoidal variable hysteresis control. The control technique was implemented in a FPGA (Field Programmable Gate Array) device, using a Hardware Description Language (VHDL). Through the use of the proposed control technique, the AC voltage regulator performs active power-factor correction, and low THD in the input current, for linear and non-linear loads, satisfying the requirements of the EEC61000-3-2 standards. Experimental results from an example prototype, designed for 300W of nominal output power, 50kHz (switching frequency), and 127Vrms of nominal input and output voltages, are presented in order to validate the proposed AC regulator. © 2005 IEEE.

Determination of carrier mobility in MEH-PPV thin-films by stationary and transient current techniques

Charge transport and shelf-degradation of MEH-PPV thin-films were investigated through stationary (e.g. current versus voltage - JxV) and transient (e.g. Time-of-Flight - ToF, Dark-Injection Space-Charge-Limited Current - DI-SCLC, Charge Extraction by Linearly Increasing Voltage - CELN) current techniques. Charge carrier mobility in nanometric films was best characterized through JxV and DI-SCLC. It approaches 10(-6) cm(2)Ns under a SCLC regime with deep traps for light-emitting diode applications. ToF measurements performed on micrometric layers (i.e. - 3 mu m) confirmed studies in 100 nm-thick films as deposited in OLEDs. All results were comparable to a similar poly(para-phenylene vinylene) derivative, MDMO-PPV. Electrical properties extracted from thin-film transistors demonstrated mobility dependence on carrier concentration in the channel (similar to 10(-7)-10(-4) cm(2)/Vs). At low accumulated charge levels and reduced free carrier concentration, a perfect agreement to the previously cited techniques was observed. Degradation was verified through mobility reduction and changes in trap distribution of states. (C) 2011 Elsevier B.V. All rights reserved.

Current collection by an active spherical electrode in an unmagnetized plasma

A theoretical model for the steady-state response of anodic contactors that emit a plasma current Ii and collect electrons from a collisionless, unmagnetized plasma is presented. The use of a (kinetic) monoenergetic population for the attracted species, well known in passive probe theory, gives both accuracy and tractability to the theory. The monoenergetic population is proved to behave like an isentropic fluid with radial plus centripetal motion, allowing direct comparisons with ad hoc fluid models. Also, a modification of the original monoenergetic equations permits analysis of contactors operating in orbit-limited conditions. Besides that, the theory predicts that, only for plasma emissions above certain threshold current a presheath/double layer/core structure for the potential is formed (the core mode), while for emissions below that threshold, a plasma contactor behaves exactly as a positive-ion emitter with a presheath/sheath structure (the no-core mode). Ion emitters are studied as a particular case. Emphasis is placed on obtaining dimensionless charts and approximate asymptotic laws of the current-voltage characteristic.

Short, high current electrodynamic tether

An electrodynamic tether experiment, to be carried out in the Russian spacecraft Almaz, is proposed. A 10 km tether would be deployed downwards; the lower 8 km would be nonconductive, the upper 2 km would be conductive, bare, and 2.2 mm in diameter, and would act as a thruster, with power supply at the top. This hybrid arrangement allows for other, onelectrodynamic experiments,reducing costs; it also limits the induced electromotive force, reducing the power to be handled. The current-voltage characteristic of contactors would be measured. With the anode switched off, the wire itself should collect a current over 5 A at day conditions, providing a thrust of 0.11 N at a 0.77 kW power.

Heterojunction Band Offset Limitations on Open-Circuit Voltage in p-ZnTe/n-ZnSe Solar Cells

Limitations on the open-circuit voltage of p-ZnTe/n-ZnSe heterojunction solar cells are studied via current-voltage (I-V) measurements under solar concentration and at variable temperature. The open-circuit voltage reaches a maximum value of 1.95 V at 77 K and 199 suns. The open-circuit voltage shows good agreement with the calculated built-in potential of 2.00 V at 77 K. These results suggest that the open-circuit voltage is limited by heterojunction band offsets associated with the type-II heterojunction band lineup, rather than the bandgap energy of the ZnTe absorber material.

Characterization of a volume-sensitive chloride current in rat osteoblast-like (ROS 17/2.8) cells

1. During osmotic swelling, cultured osteoblastic cells (ROS 17/2.8) exhibited activation of large amplitude Cl- currents in the whole-cell configuration of the patch-clamp technique. Effects of hypotonic shock on cell volume and membrane conductance were rapidly reversed on return to isotonic conditions. 2. Voltage command pulses in the range -80 to +50 mV produce instantaneous activation of Cl- currents. At potentials more positive than +50 mV the current exhibited time-dependent inactivation. The instantaneous current-voltage relationship was outwardly rectifying. 3. The anion permeability sequence of the induced current was SCN- (2.2) > I- (1.9) > Br- (1.5) > Cl- (1.0) > F- (0.8) > gluconate- (0.2). This corresponds to Eisenman's sequence I. 4. The volume-sensitive Cl- current was effectively inhibited by the Cl- channel blockers 4,4'-diisothiocyanatostilbene-2,2-disulphonic acid (DIDS) and 5-nitro-2-(3-phenylpropylamino) benzoic acid (NPPB). Outward currents were more effectively suppressed by DIDS than inward currents. The concentrations for 50% inhibition (IC50) of outward and inward currents were 81 and 298 μM, respectively. NPPB was equally effective at inhibiting outward and inward currents (IC50 of 64 μM). The current was relatively insensitive to diphenylamine-2-carboxylate (DPC), 500 μM producing only 22.5 ± 4.0% inhibition. 5. Inhibitors of protein kinase A (H-89, 1 μM) and tyrosine kinase (tyrphostin A25, 200 μM) were without effect upon activation of Cl- currents in response to hypotonic shock. Under isotonic conditions, elevation of intracellular Ca2+ by ionomycin (1 μM) or activation of protein kinase C by 12-O-tetradecanoylphorbol 13-acetate (TPA, 0.1 μM) failed to evoke increases in basal Cl- conductance levels. 6. It is concluded that an outwardly rectifying Cl- conductance is activated upon osmotic swelling and may be involved in cell volume regulation of ROS 17/2.8 cells.

Mechanisms for triggering high-voltage breakdown in vacuum

The electrical and optical characteristics of a cylindrical alumina insulator (94% Al203) have been measured under ultra-high vacuum (P < 10-8 mBar) conditions. A high-resolution CCD camera was used to make real-time optical recordings of DC prebreakdown luminescence from the ceramic, under conditions where DC current magnitudes were limited to less than 50μA. Two concentric metallized rings formed a pair of co-axial electrodes, on the end-face of the alumina tube; a third 'transparent' electrode was employed to study the effect of an orthogonal electric field upon the radial conduction processes within the metallized alumina specimen. The wavelength-spectra of the emitted light was quantified using a high-speed scanning monochromator and photo-multiplier tube detector. Concurrent electrical measurements were made alongside the recording of optical-emission images. An observed time-dependence of the photon-emission is correlated with a time-variation observed in the DC current-voltage characteristics of the alumina. Optical images were also recorded of pulsed-field surface-flashover events on the alumina ceramic. An intensified high-speed video technique provided 1ms frames of surface-flashover events, whilst 100ns frames were achieved using an ultra high-speed fast-framing camera. By coupling this fast-frame camera to a digital storage oscilloscope, it was possible to establish a temporal correlation between the application of a voltage-pulse to the ceramic and the evolution of photonic emissions from the subsequent surface-flashover event. The electro-optical DC prebreakdown characteristics of the alumina are discussed in terms of solid-state photon-emission processes, that are believed to arise from radiative electron-recombination at vacancy-defects and substitutional impurity centres within the surface-layers of the ceramic. The physical nature of vacancy-defects within an alumina dielectric is extensively explored, with a particular focus placed upon the trapped electron energy-levels that may be present at these defect centres. Finally, consideration is given to the practical application of alumina in the trigger-ceramic of a sealed triggered vacuum gap (TVG) switch. For this purpose, a physical model describing the initiation of electrical breakdown within the TVG regime is proposed, and is based upon the explosive destabilisation of trapped charge within the alumina ceramic, triggering the onset of surface-flashover along the insulator. In the main-gap prebreakdown phase, it is suggested that the electrical-breakdown of the TVG is initiated by the low-field 'stripping' of prebreakdown electrons from vacancy-defects in the ceramic under the influence of an orthogonal main-gap electric field.