Anomaly of the current self-oscillation frequency in the sequential tunneling of a doped GaAs/AlAs superlattice


Autoria(s): Wang XR; Wang JN; Sun BQ; Jiang DS
Data(s)

2000

Resumo

An anomalous behavior of the current self-oscillation frequency is observed in the dynamic de voltage bands, emerging from each sawtoothlike branch of the current-voltage characteristic of a doped GaAs/A1As superlattice in the transition process from static to dynamic electric field domain formations. Varying the applied de voltage at a fixed temperature, we find that the frequency increases while the averaged current decreases. Inside each voltage band, the frequency has a strong voltage dependence in the temperature range where the averaged current changes with the applied de voltage. This dependence can be understood in terms of motion of the system along a limit cycle.

Identificador

http://ir.semi.ac.cn/handle/172111/12652

http://www.irgrid.ac.cn/handle/1471x/65296

Idioma(s)

英语

Fonte

Wang XR; Wang JN; Sun BQ; Jiang DS .Anomaly of the current self-oscillation frequency in the sequential tunneling of a doped GaAs/AlAs superlattice ,PHYSICAL REVIEW B,2000,61(11):7261-7264

Palavras-Chave #半导体物理 #GAAS-ALAS SUPERLATTICES #ELECTRIC-FIELD DOMAINS #MULTIPLE QUANTUM-WELLS #SEMICONDUCTOR SUPERLATTICES #ROOM-TEMPERATURE #DIODES #MODEL #INSTABILITIES #TRANSPORT
Tipo

期刊论文