Heterojunction Band Offset Limitations on Open-Circuit Voltage in p-ZnTe/n-ZnSe Solar Cells


Autoria(s): Teran, A.; Chen, C.; López, E.; Linares, P.G.; Artacho Huertas, Irene; Martí Vega, Antonio; Luque López, Antonio; Phillips, J.D.
Data(s)

2015

Resumo

Limitations on the open-circuit voltage of p-ZnTe/n-ZnSe heterojunction solar cells are studied via current-voltage (I-V) measurements under solar concentration and at variable temperature. The open-circuit voltage reaches a maximum value of 1.95 V at 77 K and 199 suns. The open-circuit voltage shows good agreement with the calculated built-in potential of 2.00 V at 77 K. These results suggest that the open-circuit voltage is limited by heterojunction band offsets associated with the type-II heterojunction band lineup, rather than the bandgap energy of the ZnTe absorber material.

Formato

application/pdf

Identificador

http://oa.upm.es/41020/

Idioma(s)

eng

Publicador

E.T.S.I. Telecomunicación (UPM)

Relação

http://oa.upm.es/41020/1/INVE_MEM_2015_225315.pdf

http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7066904

info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1109/JPHOTOV.2015.2411057

Direitos

http://creativecommons.org/licenses/by-nc-nd/3.0/es/

info:eu-repo/semantics/openAccess

Fonte

IEEE Journal of Photovoltaics, ISSN 2156-3381, 2015, Vol. 5, No. 3

Palavras-Chave #Electrónica #Telecomunicaciones
Tipo

info:eu-repo/semantics/article

Artículo

PeerReviewed