A voltage-controlled tunable two-color infrared photodetector using GaAs/AlAs/GaAlAs and GaAs/GaAlAs stacked multiquantum wells

A voltage-controlled tunable two-color infrared detector with photovoltaic (PV) and photoconductive (PC) dual-mode operation at 3-5 mu m and 8-14 mu m using GaAs/AlAs/AlGaAs double barrier quantum wells (DBQWs) and bound-to-continuum GaAs/AlGaAs quantum wells is demonstrated. The photoresponse peak of the photovoltaic GaAs/AlAs/GaAlAs DBQWs is at 5.3 mu m, and that of the photoconductive GaAs/GaAlAs quantum wells is at 9.0 mu m. When the two-color detector is under a zero bias, the spectral response at 5.3 mu m is close to saturate and the peak detectivity at 80 K can reach 1.0X10(11) cmHz(1/2)/W, while the spectral photoresponsivity at 9.0 mu m is absolutely zero completely. When the external voltage of the two-color detector is changed to 2.0 V, the spectral photoresponsivity at 5.3 mu m becomes zero while the spectral photoresponsivity at 9.0 mu m increases comparable to that at 5.3 mu m under zero bias, and the peak detectivity (9.0 mu m) at 80 K can reach 1.5X10(10) cmHz(1/2)/W. Strictly speaking, this is a real bias-controlled tunable two-color infrared photodetector. We have proposed a model based on the PV and PC dual-mode operation of stacked two-color QWIPs and the effects of tunneling resonance with narrow energy width of photoexcited electrons in DBQWs, which can explain qualitatively the voltage-controlled tunable behavior of the photoresponse of the two-color infrared photodetector. (C) 1996 American Institute of Physics.

A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic

A voltage-controlled ring oscillator (VCO) based on a full enhancement-mode InAIAs/InGaAs/InP high electron mobility transistor (HEMT) logic is proposed. An enhancement-mode HEMT (E-HEMT) is fabricated, whose threshold is demonstrated to be 10 mV. The model of the E-HEMT is established and used in the SPICE simulation of the VCO. The result proves that the full E-HEMT logic technology can be applied to the VCO. And compared with the HEMT DCFL technology, the complexity of our fabrication process is reduced and the reliability is improved.

Carrier Depth Profile of Si/SiGe/Si n-p-n HBTStructural Materials Characterized by Electrochemical Capacitance- Voltage Method

于2010-11-23批量导入

Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks

The origin of the flat band voltage roll-off (V-FB roll-off) in metal gate/high-k/ultrathin-SiO2/Si metal-oxide-semiconductor stacks is analyzed and a model describing the role of the dipoles at the SiO2/Si interface on the V-FB sharp roll-off is proposed. The V-FB sharp roll-off appears when the thickness of the SiO2 interlayer diminishes to below the oxygen diffusion depth. The results derived using our model agree well with experimental data and provide insights to the mechanism of the V-FB sharp roll-off.

Experimental study of the high-voltage breakdown and simulations for the RFQ cooler and buncher RFQ1L

The RFQ cooler and buncher RFQ1L is one of the key parts of the being-built super-heavy nuclide research spectrometer. In order to understand the high-voltage breakdown phenomenon, the voltages between electrodes have been measured. In addition, more extensive simulations have been performed for better understanding and optimizing the RFQ1L work points.

高电压锯齿波聚束器的设计研制；Theoretical Calculation of Sawtooth Wave Buncher with High Voltage

近些年来,使用锯齿波直接形成的方法建造非谐振型聚束器在国内及国际均得到了广泛的应用。由于电子技术及机械加工工艺的飞速发展和更高功率电子管的出现,可以设计出更高指标的聚束器,进而可以有效提高束线的匹配效率及运行稳定度。对兰州重离子加速器源束线新的高电压锯齿波聚束器的研制进行了详细阐述,由于该聚束器具有目前国际同类型设备中最高的电压、频率以及相对苛刻的现场条件限制,故还对设计中所涉及的工程实施方案进行了有效补充和完善。

Study on shunt impedance and voltage distribution of 4-rod RFQ cavity

A high current RFQ (radio frequency quadrupole) is being studied at the Institute of Modern Physics, CAS for the direct plasma injection scheme. Shunt impedance is air important parameter when designing a 4-rod RFQ cavity, it reflects the RF efficiency of the cavity, and has a direct influence on the cost of the structure. Voltage distribution of a RFQ cavity has an effect on beam transmission, and particles would be lost if the actual voltage distribution is not as what, it should be. The influence of cell length, stern thickness and height on Shunt impedance and voltage distribution have been studied, in particular the effect of projecting electrodes has been investigated in detail.

Abnormal phenomenon of the dependence of the retention factors for uncharged species on applied voltage in capillary electrochromatography

Polymethacrylate-based monolithic columns were prepared for capillary electrochromatography (CEC) by in situ copolymerization of butyl methacrylate (BMA), 2-acrylamido-2-methyl-1-propanesulfonic acid (AMPS), and ethylene dimethacrylate (EDMA) in the presence of a porogen in fused-silica capillaries of 100 mum I.D. The abnormal phenomenon that retention factors for neutral species decreases with applied voltage in CEC was observed. Capillary electrophoresis (CE) instruments usually require a period of time to increase voltage from 0 kV to desired value, which is called as ramp time. Such ramp time and any error in the determination of dead time should be taken into account during the accurate calculation of retention factors. After the correction of the retention factors, the plots of the corrected factors for alkylbenzene versus applied voltage were made, the absolute value of the plot slopes are less than 1.8 X 10(-4), Which indicates that the corrected retention times for neutral species do not show any dependence on applied voltage. Further, the plots of the corrected retention times for acidic and basic compounds versus the reciprocal of applied voltage were drawn, where the target compounds were eluted in neutral form. The very nice linearity of the plots was obtained. The linear correlation coefficients are over 0.999. Here, the slopes of the plots represent

Large current gain and low operational voltage permeable metal-base organic transistors based on Au/Al double layer metal base

In order to realize the common-emitter characteristics of the tris(8-hydroxyquinoline) aluminium (Alq(3))-based organic transistors, we used Au/Al double metal layer as the base, thus the vertical metal-base transistors with structure of Al/n-Si/Au/Al/Alq(3)/LiF/Al were constructed. It was found that the contact properties between the base and the organic semiconductors play an important role in the device performance. The utilization of Au/Al double layer metal base allows the devices to operate at high gain in the common-emitter and common-base mode at low operational voltage.

Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage

We demonstrate the suitability of N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB), an organic semiconductor widely used in organic light-emitting diodes (OLEDs), for high-gain, low operational voltage nanostructured vertical-architecture transistors, which operate as permeable-base transistors. By introducing vanadium oxide (V2O5) between the injecting metal and NPB layer at the transistor emitter, we reduced the emitter operational voltage.

The effects of shell characteristics on the current-voltage behaviors of dye-sensitized solar cells based on ZnO/TiO2 core/shell arrays

The ZnO/TiO2 core/shell structure was formed through deposition of a TiO2 coating layer on the hydrothermally fabricated ZnO nanorod arrays through radio frequency magnetron sputtering. The effects of the TiO2 shell's characteristics on the current-voltage behaviors of the core/shell-based dye-sensitized solar cells (CS-DSSC) were investigated. As the rates of injection, transfer, and recombination of electrons of such CS-DSSC were affected significantly by the crystallization, morphology, and continuity of the TiO2 shells, the photovoltaic efficiency was accordingly varied remarkably. In addition, the efficiency was further improved by enhancing the surface area in the core/shell electrode.

Polyimide thin films as compensators for liquid crystal displays

The disadvantages of NW-TN-LCD (normally white twisted nematic liquid crystal display) are discussed. The reason that the negative birefringent polyimide thin films are used to compensate NW-TN-LCD to decrease off-axis leakage, improve contrast ratios and enlarge viewing angeles is explained. A certain polyimide thin film is taken as an example to show the compensation effect on NW-TN-LCD. (C) 1997 by John Wiley & Sons, Ltd.

Characteristics of anodic coatings oxidized to different voltage on AZ91D Mg alloy by micro-arc oxidization technique

With increasing applied voltage, three types of anodic coatings, passive film, micro-spark ceramic coating and spark ceramic coating were made by micro-arc oxidization (MAO) technique on AZ91D magnesium alloy in alkali-silicate solution. The structure, composition characteristics and the electrochemical properties of coatings were also studied with SEM, XRD and EIS (electrochemical impedance spectroscopy) technique, respectively. It is found that the electrochemical properties are closely related to the structure and composition characteristics of the anodic coatings. At the same time, the characteristics of the three types of anodic coatings differ significantly, among them, the micro-spark ceramic coating, prepared in the voltage range of 170similar to220V exhibits compact, homogeneous structure and highest corrosion-resistance.

Fractional and unquantized dc voltage generation in THz-driven semiconductor superlattices

We consider the spontaneous creation of a dc voltage across a strongly coupled semiconductor superlattice subjected to THz radiation. We show that the dc voltage may be approximately proportional either to an integer or to a half- integer multiple of the frequency of the applied ac field, depending on the ratio of the characteristic scattering rates of conducting electrons. For the case of an ac field frequency less than the characteristic scattering rates, we demonstrate the generation of an unquantized dc voltage.