Fractional and unquantized dc voltage generation in THz-driven semiconductor superlattices


Autoria(s): Alekseev, Kirill N.; Cannon, Ethan H.; Kusmartsev, Feodor V.; Campbell, David K.
Data(s)

13/04/2009

13/04/2009

29/03/2001

Resumo

We consider the spontaneous creation of a dc voltage across a strongly coupled semiconductor superlattice subjected to THz radiation. We show that the dc voltage may be approximately proportional either to an integer or to a half- integer multiple of the frequency of the applied ac field, depending on the ratio of the characteristic scattering rates of conducting electrons. For the case of an ac field frequency less than the characteristic scattering rates, we demonstrate the generation of an unquantized dc voltage.

Identificador

2001. "Fractional and unquantized dc voltage generation in THz-driven semiconductor superlattices," cond-mat/0103608. http://arxiv.org/abs/cond-mat/0103608

Europhysics Letters 56 (2001) 842; Erratum: 68 (2004) 753

http://arxiv.org/abs/cond-mat/0103608

doi:10.1209/epl/i2001-00596-9

http://hdl.handle.net/2144/984

Relação

cond-mat/0103608

Tipo

article