A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic
Data(s) |
2009
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Resumo |
A voltage-controlled ring oscillator (VCO) based on a full enhancement-mode InAIAs/InGaAs/InP high electron mobility transistor (HEMT) logic is proposed. An enhancement-mode HEMT (E-HEMT) is fabricated, whose threshold is demonstrated to be 10 mV. The model of the E-HEMT is established and used in the SPICE simulation of the VCO. The result proves that the full E-HEMT logic technology can be applied to the VCO. And compared with the HEMT DCFL technology, the complexity of our fabrication process is reduced and the reliability is improved. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Du Rui;Dai Yang;Chen Yanling;Yang Fuhua.A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic,半导体学报,2009,30(3):87-91 |
Palavras-Chave | #光电子学 |
Tipo |
期刊论文 |