Extraction of intrinsic response from S-parameters of laser diodes

We describe a new method for extracting the intrinsic response of a laser diode from S-parameters measured using a calibrated vector network analyzer. The experimental results obtained using the new method are compared with those obtained using the optical modulation method and the frequency response subtraction method. Good agreement has been obtained, confirming the new method validity and accuracy. The new method has the advantages of obtaining the intrinsic characteristics of a laser diode with conventional measurements using a network analyzer.

First and second order Raman scattering spectroscopy of nonpolar a-plane GaN

Nonpolar a-plane [(1120)] GaN samples have been grown on r-plane [(1102)] sapphire substrates by low-pressure metal-organic chemical-vapor deposition. The room-temperature first and second order Raman scattering spectra of nonpolar a-plane GaN have been measured in surface and edge backscattering geometries. All of the phonon modes that the selection rules allow have been observed in the first order Raman spectra. The frequencies and linewidths of the active modes have been analyzed. The second order phonon modes are composed of acoustic overtones, acoustic-optical and optical-optical combination bands, and optical overtones. The corresponding assignments of second order phonon modes have been made. (c) 2007 American Institute of Physics.

The wave function evolution of an exciton in a bilayer system: Turning on a static in-plane electric field

The time evolution of the ground state wave function of an exciton in an ideal bilayer system is investigated within the framework of the effective-mass approximation. All of the moduli squared of the ground state wave functions evolve with time as cosine functions after an in-plane electric field is applied to the bilayer system. The variation amplitude and period of the modulus squared of the ground state wave function increase with the in-plane electric field F-r for a fixed in-plane relative coordinate r and fixed separation d between the electron and hole layers. Moreover, the variation amplitude and period of the modulus squared of the ground state wave function increase with the separation d for a fixed r and fixed in-plane electric field. Additionally, the modulus squared of the ground state wave function decreases as r increases at a given time t for fixed values of d and F-r. (c) 2007 American Institute of Physics.

Temperature dependence of the Raman-active modes in the nonpolar a-plane GaN film

Temperature dependences of the polarized Raman scattering spectra in the backscattering configuration of the nonpolar a-plane (or [11 (2) over bar0]-oriented) GaN thin film are analyzed in the range from 100 to 570 K. The nonpolar a-plane GaN film is grown on an r-plane [or (1 (1) over bar 02)-oriented] sapphire substrate by metal organic chemical vapor deposition. The spectral features of the Raman shifts, intensities, and linewidths of the active phonons modes A(1)(TO), E-1(TO), and E-2(high) are significantly revealed, and corresponding temperature coefficients are well deduced by the empirical relationships. With increasing the measurement temperature the Raman frequencies are substantially redshifted and the linewidths gradually broaden. The compressive-strain-free temperature for the nonpolar a-plane GaN film is found to be at about 400 K. Our studies will lead to a better understanding of the fundamental physical characteristics of the nonpolar GaN film. (c) 2007 American Institute of Physics.

Polarized Raman scattering studies of nonpolar a-plane GaN films grown on r-plane sapphire substrates by MOCVD

Nonpolar (1120) a-plane GaN thin films were grown on r-plane (1102) sapphire substrates by low-pressure metal organic chemical vapor deposition (MOCVD). The stress characteristics of the a-plane GaN films were investigated by means of polarized Raman scattering spectra in backscattering configurations. The experimental results show that there are strong anisotropic in-plane stresses within the epitaxial a-plane GaN films by calculating the corresponding stress tensors. The temperature dependence of Raman scattering spectra was studied in the range from 100 K to 550 K. The measurements reveal that the Raman phonon frequencies decrease with increasing temperature. The temperature at which nonpolar a-plane GaN films are strain free is discussed. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Strain-induced in-plane optical anisotropy in (001) GaAs/AlGaAs superlattice studied by reflectance difference spectroscopy

In-plane optical anisotropy (IPOA) in (001) GaAs/AlGaAs superlattice induced by uniaxial strain has been investigated by reflectance difference spectroscopy (RDS). Uniaxial strain on the order of 10(-4) was introduced by bending a strip sample with a stress apparatus. The IPOA of all interband transitions shows a linear dependence on strain. The birefringence and dichroism spectra induced by strain are obtained by RDS on the basis of a three-phase model, which is in good agreement with the reported results. (c) 2006 American Institute of Physics.

Surface plasmon coupling in hexagonal textured metallic microcavity

The coupling of surface plasmons to the photonic modes in hexagonal textured metallic microcavity was studied. The modified photonic modes enable efficient coupling with the luminescence source in the microcavity. Hexagonal photonic crystal lattice has higher folding symmetry providing more channels for surface plasmon coupling in different in-plane directions, i.e., more isotropic light extraction profile than one-or two-dimensional gratings. Results show that strong coupling between surface plasmon modes and the waveguide mode in the microcavity has led to angle-selective enhanced light extraction and it was as much as 12 times more light extracted compare to planar microcavity. (c) 2006 American Institute of Physics.

Study on in-plane optical anisotropy of semiconductor materials by reflectance difference spectroscopy

In the present review, the measuring principle of reflectance difference spectroscopy (RDS) is given. As a powerful tool in the surface and interface analysis technologies, the application of RDS to the research on semiconductor materials is summarized. along with the origins of the in-plane optical anisotropy of semiconductors. And it is believed that RDS will play an important role in the electrooptic modification of Si-based semiconductor materials.

Application of plane wave method to the calculation of electronic states of nano-structures

The electronic states of nano-structures are studied in the framework of effective-mass envelope-function theory using the plane wave basis. The barrier width and the number of plane waves are proposed to be 2.5 times the effective Bohr radius and 15(n), respectively, for n-dimensional nano-structures (n = 1,2,3). Our proposals can be widely applied in the design of various nano-structure devices.

Strong in-plane optical anisotropy of asymmetric (001) quantum wells

It is well known that asymmetry in the (001) direction can induce in-plane optical anisotropy (IPOA) in (001) quantum wells (QWs). In this letter, asymmetry is introduced in (001) GaAs/AlGaAs QWs by inserting 1 ML (monolayer) of InAs or AlAs at interfaces. Strong IPOA, which is comparable to that in the InGaAs/InP QWs with no common atom, is observed in the asymmetric GaAs/AlGaAs QW by reflectance difference spectroscopy. (C) 2006 American Institute of Physics.

Study on in-plane optical anisotropy of Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice by reflectance difference spectroscopy - art. no. 071908

Si0.75Ge0.25/Si/Si0.5Ge0.5 trilayer asymmetric superlattices were prepared on Si (001) substrate by ultrahigh vacuum chemical vapor deposition at 500 degrees C. The nonlinear optical response caused by inherent asymmetric interfaces in this structure predicted by theories was verified by in-plane optical anisotropy in (001) plane measured via reflectance difference spectroscopy. The results show Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice is optically biaxial and the two optical eigen axes in (001) plane are along the directions [110] and [-110], respectively. Reflectance difference response between the above two eigen axes can be influenced by the width of the trilayers and reaches as large as similar to 10(-4)-10(-3) in 15-period 2.7 nm-Si0.75Ge0.25/8 nm-Si/1.3 nm-Si0.5Ge0.5 superlattice when the normal incident light wavelength is in the range of 500-1100 nm, which is quite remarkable because the optical anisotropy does not exist in bulk Si.

Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire

The stress states in unintentionally doped GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire, and their effects on optical properties of GaN films were investigated by means of room-temperature confocal micro-Raman scattering and photoluminescence techniques. Relatively large tensile stress exists in GaN epilayers grown on Si and 6H-SiC while a small compressive stress appears in the film grown on sapphire. The latter indicates effective strain relaxation in the GaN buffer layer inserted in the GaN/sapphire sample, while the 50-nm-thick AlN buffer adopted in the GaN/Si sample remains highly strained. The analysis shows that the thermal mismatch between the epilayers and the substrates plays a major role in determining the residual strain in the films. Finally, a linear coefficient of 21.1+/-3.2 meV/GPa characterizing the relationship between the luminescent bandgap and the biaxial stress of the GaN films is obtained. (C) 2003 American Institute of Physics.

Epitaxial growth and characterization of SiC on C-plane sapphire substrates by ammonia nitridation

The growth of SiC epilayers on C-face (0 0 0 1) sapphire (alpha-Al2O3) has been performed using CVD method. We found that the quality of SiC epilayers has been improved through the nitridation of substrates by exposing them to ammonia ambient, as compared to growth on bare sapphire substrates. The single crystallinity of these layers was verified by XRD and double crystal XRD measurements. Atomic force microscopy was used to evaluate the surface morphology. Infrared reflectivity and Raman scattering measurement were carried out to investigate the phonon modes in the grown SiC. Detailed Raman analysis identified the 6H nature of the as-grown SiC films. (C) 2002 Elsevier Science B.V. All rights reserved.

Interface-related in-plane optical anisotropy in GaAs/AlxGa1-xAs single-quantum-well structures studied by reflectance difference spectroscopy

The in-plane optical anisotropies of a series of GaAs/AlxGa1-xAs single-quantum-well structures have been observed at room temperature by reflectance difference spectroscopy. The measured degree of polarization of the excitonic transitions is inversely proportional to the well width. Numerical calculations based on the envelope function approximation incorporating the effect of C-2v-interface symmetry have been performed to analyze the origin of the optical anisotropy. Good agreement with the experimental data is obtained when the optical anisotropy is attributed to anisotropic-interface structures. The fitted interface potential parameters are consistent with predicted values.

In-plane propagation of cavity polaritons in a quantum semiconductor microcavity

Considering that the coupling among the heavy-hole exciton, light-hole exciton and the cavity photon can form bipolaritons in a quantum semiconductor microcavity, we calculate the group velocities of the cavity polaritons at different incident angles using the coupling model of three harmonic oscillators. The result indicates that the group velocities of the low and middle branches of the cavity polaritons have extrema, but the group velocities of the high branch increase with the increasing incident angle.