First and second order Raman scattering spectroscopy of nonpolar a-plane GaN


Autoria(s): Gao HY (Gao Haiyong); Yan FW (Yan Fawang); Zhang HX (Zhang Huixiao); Li JM (Li Jinmin); Wang JX (Wang Junxi); Yan JC (Yan Jianchang)
Data(s)

2007

Resumo

Nonpolar a-plane [(1120)] GaN samples have been grown on r-plane [(1102)] sapphire substrates by low-pressure metal-organic chemical-vapor deposition. The room-temperature first and second order Raman scattering spectra of nonpolar a-plane GaN have been measured in surface and edge backscattering geometries. All of the phonon modes that the selection rules allow have been observed in the first order Raman spectra. The frequencies and linewidths of the active modes have been analyzed. The second order phonon modes are composed of acoustic overtones, acoustic-optical and optical-optical combination bands, and optical overtones. The corresponding assignments of second order phonon modes have been made. (c) 2007 American Institute of Physics.

Identificador

http://ir.semi.ac.cn/handle/172111/9406

http://www.irgrid.ac.cn/handle/1471x/64115

Idioma(s)

英语

Fonte

Gao, HY (Gao, Haiyong); Yan, FW (Yan, Fawang); Zhang, HX (Zhang, Huixiao); Li, JM (Li, Jinmin); Wang, JX (Wang, Junxi); Yan, JC (Yan, Jianchang) .First and second order Raman scattering spectroscopy of nonpolar a-plane GaN ,JOURNAL OF APPLIED PHYSICS,MAY 15 2007,101 (10):Art.No.103533

Palavras-Chave #半导体材料 #HEXAGONAL GAN
Tipo

期刊论文