Strain-induced in-plane optical anisotropy in (001) GaAs/AlGaAs superlattice studied by reflectance difference spectroscopy


Autoria(s): Tang CG; Chen YH; Ye XL; Wang ZG; Zhang WF
Data(s)

2006

Resumo

In-plane optical anisotropy (IPOA) in (001) GaAs/AlGaAs superlattice induced by uniaxial strain has been investigated by reflectance difference spectroscopy (RDS). Uniaxial strain on the order of 10(-4) was introduced by bending a strip sample with a stress apparatus. The IPOA of all interband transitions shows a linear dependence on strain. The birefringence and dichroism spectra induced by strain are obtained by RDS on the basis of a three-phase model, which is in good agreement with the reported results. (c) 2006 American Institute of Physics.

Identificador

http://ir.semi.ac.cn/handle/172111/9750

http://www.irgrid.ac.cn/handle/1471x/64287

Idioma(s)

英语

Fonte

Tang, CG (Tang, C. G.); Chen, YH (Chen, Y. H.); Ye, XL (Ye, X. L.); Wang, ZG (Wang, Z. G.); Zhang, WF (Zhang, W. F.) .Strain-induced in-plane optical anisotropy in (001) GaAs/AlGaAs superlattice studied by reflectance difference spectroscopy ,JOURNAL OF APPLIED PHYSICS,DEC 1 2006,100 (11):Art.No.113122

Palavras-Chave #半导体材料 #MULTIPLE-QUANTUM WELLS
Tipo

期刊论文