Polarized Raman scattering studies of nonpolar a-plane GaN films grown on r-plane sapphire substrates by MOCVD
Data(s) |
2006
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Resumo |
Nonpolar (1120) a-plane GaN thin films were grown on r-plane (1102) sapphire substrates by low-pressure metal organic chemical vapor deposition (MOCVD). The stress characteristics of the a-plane GaN films were investigated by means of polarized Raman scattering spectra in backscattering configurations. The experimental results show that there are strong anisotropic in-plane stresses within the epitaxial a-plane GaN films by calculating the corresponding stress tensors. The temperature dependence of Raman scattering spectra was studied in the range from 100 K to 550 K. The measurements reveal that the Raman phonon frequencies decrease with increasing temperature. The temperature at which nonpolar a-plane GaN films are strain free is discussed. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Gao, HY (Gao, Haiyong); Yan, FW (Yan, Fawang); Li, JM (Li, Jinmin); Wang, JX (Wang, Junxi); Yan, JC (Yan, Jianchang) .Polarized Raman scattering studies of nonpolar a-plane GaN films grown on r-plane sapphire substrates by MOCVD ,PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,DEC 2006,203 (15):3788-3792 |
Palavras-Chave | #半导体材料 #TIME-RESOLVED PHOTOLUMINESCENCE |
Tipo |
期刊论文 |