Strong in-plane optical anisotropy of asymmetric (001) quantum wells


Autoria(s): Chen YH; Ye XL; Xu B; Wang ZG
Data(s)

2006

Resumo

It is well known that asymmetry in the (001) direction can induce in-plane optical anisotropy (IPOA) in (001) quantum wells (QWs). In this letter, asymmetry is introduced in (001) GaAs/AlGaAs QWs by inserting 1 ML (monolayer) of InAs or AlAs at interfaces. Strong IPOA, which is comparable to that in the InGaAs/InP QWs with no common atom, is observed in the asymmetric GaAs/AlGaAs QW by reflectance difference spectroscopy. (C) 2006 American Institute of Physics.

Identificador

http://ir.semi.ac.cn/handle/172111/10662

http://www.irgrid.ac.cn/handle/1471x/64527

Idioma(s)

英语

Fonte

Chen YH; Ye XL; Xu B; Wang ZG .Strong in-plane optical anisotropy of asymmetric (001) quantum wells ,JOURNAL OF APPLIED PHYSICS,2006,99(9):Art.No.096102

Palavras-Chave #半导体材料 #HETEROSTRUCTURES #SPECTROSCOPY #INTERFACES
Tipo

期刊论文