997 resultados para ag ions
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(1)Au-Pd/PtAuAg (2)/X- (3)[111]80% (4)K3[Fe(CN)6]Na2S2O3FeIIIFeIII(CN)6K3[Fe(CN)6]Na2S2O3 (5)3, 3', 5, 5'--
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LnBa_2Cu_(3(1-x))Ag_xO_(7-) (x = 0.1,0.3,0.5, Cu = Y,Dy,Ho,Er,Gd) YBa_(2(1-x))Cu_3Ag_xO_(7-) (x = 0.05,0.1,0.2,0.3,0.4,0.5,0.6); Y_(1-x)Ag_xBa_2Cu_3O_(7-) (x = 0.05,0.1,0.2,0.3,0.5); YBa_2Cu_3O_(7-)Ag_x (x = 0.22.0), CuBaCu_3O_(7-)Ag_x (x = 0.5,1.0, Cu = Dy,Ho,Er)AgAgCuBa_2Cu_(3(1-x))Ag_xO_(7-)AgCuAgx<0.1x>0.1AgYBa_(2(1-x))Cu_3Ag_(2x)Cu_3O_(7-)x<0.690kAgBaAgAgAgAgJcAgY_(1-x)Ag_xBa_2Cu_3O_(7-)x<0.590kAgAg13aCuYCAgJcx=0.1Jc = 362 A/cm~2AgJcYBa_2Cu_3O_(7-)Ag_xAgJcAgJcAgJcx=1JcAg2.0molAgAgAgYCAgAgCuBaCu_3O_(7-)Ag_x1mol AgJcDyBaCu_3O_(7-)Ag_(1.0) 113A/cm~2HoBaCu_3O_(7-)Ag_(1.0) 164 A/cm~2 ErBaCu_3O_(7-)Ag_(1.0) 177A/cm~2Ag6.321/cm~3YBaCu_3O_(7-)AgJc570 A/cm~2
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The differences between the interdiffusion characteristics of Ag/YBa2Cu3O7-x and Al/YBa2Cu3O7-x contact interfaces have been revealed by secondary ion mass spectrometry (SIMS). The different electrical properties of Ag/YBa2Cu3O7-x and YBa2Cu3O7-x films after high temperature treatment are well understood by the SIMS results.
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Surface plasmon enhanced antireflection coatings for GaAs solar cells have been designed theoretically. The reflectance of double-layer antireflection coatings (ARCs) with different suspensions of Ag particles is calculated as a function of the wavelength according to the optical interference matrix and the Mie theory. The mean dielectric concept was adopted in the simulations. A significant reduction of reflectance in the spectral region from 300 to 400 nm was found to be beneficial for the design of ARCs. A new SiO_2/Ag-ZnS double-layer coating with better antireflection ability can be achieved if the particle volume fraction in ZnS is 1%-2%.
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(PLD)SiZnO,Ag,AgZnO.X-.,ZnOc,Ag.-AgAg/ZnO.150200AgAgZnO,150200AgZnO.,AgZnOp.
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Ag/AuGeNi/n-GaSb150450,220,6.710~(-4)cm~2AESXRD,
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The plasmon resonance absorption of the Ag/SiO2 nanocomposite film is investigated. The measured absorption spectra are compared with those calculated by the Mie theory. The results indicate that the Mie theory on the basis of classical electrodynamics can only partially explain the optical absorption spectra of the Ag/SiO2 nanocomposite film. We believe that the plasmon resonance absorption is mainly an intrinsic quality of the metal particle, and can be explained only with the electronic structure of the metal particle. In the latter, surface resonance state is introduced to systematically discuss the optical absorption spectra of the Ag/SiO2 nanocomposite film. (C) 2003 Elsevier Science B.V. All rights reserved.
Resumo:
Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits. In the present paper, three novel SOI nano-layer structures have been demonstrated. ULTRA-THIN SOI has been fabricated by separation by implantation of oxygen (SIMOX) technique at low oxygen ion energy of 45 keV and implantation dosage of 1.81017/cm2. The formed SOI layer is uniform with thickness of only 60 nm. This layer is of crystalline quality. and the interface between this layer and the buried oxide layer is very sharp, PATTERNED SOI nanostructure is illustrated by source and drain on insulator (DSOI) MOSFETs. The DSOI structure has been formed by selective oxygen ion implantation in SIMOX process. With the patterned SOI technology, the floating-body effect and self-heating effect, which occur in the conventional SOI devices, are significantly suppressed. In order to improve the total-dose irradiation hardness of SOI devices, SILICON ON INSULATING MULTILAYERS (SOIM) nano-structure is proposed. The buried insulating multilayers, which are composed of SiOx and SiNy layers, have been realized by implantation of nitride and oxygen ions into silicon in turn at different ion energies, followed by two steps of high temperature annealing process, respectively, Electric property investigation shows that the hardness to the total-dose irradiation of SOIM is remarkably superior to those of the conventional SIMOX SOI and the Bond-and-Etch-Back SOI.
