热致NiOx薄膜的结构和光学性质变化

利用直流磁控反应溅射技术制备了氧气和氩气的分压比为5:100的NiOx薄膜。利用X射线衍射仪(XRD)、扫描电镜(SEM)、原子力显微镜(AFM)和光谱仪研究了热处理对薄膜的微观结构和光学性质的影响, 并对沉积态薄膜的粉末进行了热分析。沉积态的NiOx薄膜在262 ℃时开始分解, 导致NiOx薄膜的透过率增加和反射率降低。X射线衍射和示差扫描量热曲线(DSC)分析表明, 在热处理过程中并无物相的变化, 光学性质的变化是由于NiOx薄膜热分解引起薄膜表面形貌发生变化而引起的。通过Kissinger公式计算出

氧化铋薄膜用于蓝光可录存储的研究

利用直流磁控溅射法在不同氧氩分压比条件下制备了BiOx薄膜。通过对薄膜在蓝光作用前后的反射率对比度变化的研究发现，氧氩分压比为50％时制备的薄膜具有最佳的光学对比度。利用X射线衍射仪(XRD)、X光电子能谱(XPS)和光谱仪研究了薄膜热处理前后的结构和光谱性质的变化。研究结果表明薄膜光学性质变化主要由薄膜中氧化铋的相变引起。蓝光静态测试结果显示氧氩分压比为50％条件下制备的BiOx薄膜具有很好好的记录敏感度，在11mW的记录功率和800ns的记录脉宽条件下，得到了52％的反射率对比度。此外，BiOx薄膜表现出了非常好的读出稳定性。

激光辐照引起Ge2Sb2Te5非晶态薄膜的电/光性质变化

研究了激光辐照引起Ge2Sb2Te5非晶态薄膜的电/光性质变化,当激光功率为580mW时薄膜的方块电阻有四个数量级（10^7～10^3Ω/□）的突变;对电阻发生突变前、中、后的三个样品进行了XRD测试,结果表明,随着激光功率的增大,薄膜由非晶态向晶态转变,用椭偏仪测试了结构转变前、中、后三个样品的光学常数,在可见光范围内薄膜的光学常数在波长相同情况下有：n（非晶态）〉n（中间态）〉n（晶态）,k（晶态）〉k（中间态）〉k（非晶态）,α（晶态）〉α（中间态）〉α（非晶态）,结合电阻变化曲线和XRD图谱讨论了激光辐照Ge2Sb2Te5非晶态薄膜的电/光性质变化同激光功率和结构转变之间的关系.

Write-once medium with Fe-Doped BiOx thin films for blue laser recording

Fe:BiOx films are fabricated on K9 glass substrates by rf-magnetron sputtering of a BiFeO target under argon atmosphere with increasing sputtering power from 80 to 200 W at room temperature. It is found that the thin films grown at the sputtering power of 160W can be formed at an appropriate deposition rate and have an improved surface morphology. The XPS result reveals that the films investigated are comprised of Bi, Fe and O elements. A typical XRD pattern shows that no phase transition occurs in the films up to 400 degrees C. The results of the blue laser recording test demonstrate that the Fe:BiOx films have good writing sensitivity for blue laser beam (406.7 nm) and good stability after reading 10000 times. The recording marks of 200nm or less are obtained. These results indicate that the introduction of Fe into BiOx films can reduce the mark size and improve the stability of the films.

Si underlayer induced nano-ablation in AgInSbTe thin films

AgInSbTelSi thin films on glass substrates are prepared by dc magnetron sputtering at room temperature. Using Si underlayer as the thermal diffusion layer, the super-resolution nano-ablation holes with a size of 70nm in the AgInSbTe phase change films are obtained by a far-field focused laser experimental setup, with laser wavelength 405nm and objective-lens numerical aperture 0.90. The nano-ablation formation mechanism is analysed and discussed via the thermal diffusion of sample structures.

Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement

Sheet resistance of laser-irradiated Ge2Sb2Te5 thin films prepared by magnetron sputtering was measured by the four-point probe method. With increasing laser power the sheet resistance undergoes an abrupt drop from 10(7) to 10(3) Omega/square at about 580 mW. The abrupt drop in resistance is due to the structural change from amorphous to crystalline state as revealed by X-ray diffraction (XRD) study of the samples around the abrupt change point. Crystallized dots were also formed in the amorphous Ge2Sb2Te5 films by focused short pulse laser-irradiated, the resistivities at the crystallized dots and the non-crystallized area are 3.375 x 10(-3) and 2.725 Omega m, sheet resistance is 3.37 x 10(4) and 2.725 x 10(7) Omega/square respectively, deduced from the I-V Curves that is obtained by conductive atomic force microscope (C-AFM). (C) 2008 Elsevier B.V. All rights reserved.

Diseño y fabricación de un instrumento coaxial para cirugía laparoscópica.

[ES]En este trabajo se ha diseñado un producto secundario con una fijación extra en formato trocar para operaciones percutáneas dirigidas por sistemas de imagen. Este instrumento que hasta ahora era inexistente en el mercado actuará como túnel, permitiendo la introducción de agujas de radiofrecuencia y biopsia por su interior. La particularidad de este producto es el diseño del sistema de sujeción, que garantizará al cirujano que el punto a intervenir sea el mismo durante toda la operación. Este diseño se ha realizado después de hacer un estudio en profundidad de las alternativas existentes de los sistemas de fijación en el campo de la medicina oncológica y el sector industrial. Además se detalla el material de cada elemento del producto en base a la norma sanitaria correspondiente, también se explica el proceso más adecuado para la fabricación de dichos elementos y por último se realiza un cálculo sencillo del pandeo de la aguja, que garantice un uso óptimo del instrumento.

Si（111）衬底上ZnO薄膜的磁控溅射法制备及表征

采用磁控溅射法在(111)单晶硅衬底上沉积了ZnO薄膜，并研究了退火温度对ZnO薄膜晶体质量、晶粒度大小、应力和光致发光谱的影响。X射线衍射(XRD)表明薄膜为高度c轴择优取向。不同退火温度下的ZnO薄膜应力有明显变化。应力分布最为均匀的退火温度为500℃。室温下对ZnO薄膜进行了光谱分析，可观测到明显的紫光发射(波长为380nm左右)。实验结果表明，用磁控溅射法在单晶硅衬底上能获得高质量的ZnO薄膜。

射频磁控溅射法制备TiO2-xNX薄膜的结构性能研究

利用射频磁控溅射法室温下在Si（100）衬底上制备了N掺杂的TiO2薄膜，并且采用x射线衍射（XRD）、X射线光电子能谱（XPS）和透射光谱对薄膜进行了表征。XRD结果表明在纯Ar和N2（33．3％）／Ar气氛下制备的TiO2-xNx薄膜均为单一的金红石相，薄膜结晶性良好，呈高度（211）择优取向，而在N2（50．0％）／Ar下制备的薄膜结晶性明显变差；对于N掺杂的TiO2薄膜，XPS表明部分N原子进入TiO2晶格，并且以N—Ti—O、N—O键以及间隙式N原子形式存在；透射光谱表明掺N后的TiO2薄膜吸收边发生了红移。

非晶硅薄膜制备及其晶化特性研究

用磁控溅射法在K9玻璃上沉积了非晶硅（a—Si）膜和a—Si／Al膜，并将其在流动的N2气氛下进行退火。对退火前后的样品进行Raman光谱、XRD和SEM表征和分析。Raman光谱表明随着退火温度的升高，a-Si膜的散射峰出现了明显的蓝移，但XRD结果表明薄膜仍为非晶态；而a—Si／Al膜在温度很低时就已经开始晶化。

LiGaO_2衬底上ZnO外延膜的结构与光学特性

采用磁控溅射法在(001)、(100)及(010)LiGaO2衬底上制备了ZnO薄膜,通过X射线衍射(XRD)、原子力显微镜(AFM)、透过光谱以及光致发光谱(PL)对薄膜的结构、形貌及光学性质进行了表征。结果表明LiGaO2衬底不同晶面上制备的ZnO薄膜具有不同的择优取向,在(001)(、100)及(010)LiGaO2上分别获得了[0001][、1100]及[1120]取向的ZnO薄膜;不同取向的ZnO薄膜表面形貌差异较大;薄膜在可见光波段具有较高的透过率;在ZnO薄膜的光致发光谱中只观察到了位于378 nm的紫外发射峰,而深能级发射几乎观察不到,(1100)取向的薄膜紫外发射峰强度最大,半高宽也最小,薄膜光致发光性质的差异主要和晶粒尺寸有关。

Growth and characterization of ZnO films on (0 0 1), (1 0 0) and (0 1 0) LiGaO2 substrates

ZnO films were fabricated on LiGaO2 (0 0 1), (10 0) and (0 10) planes by RF magnetron sputtering. The structural, morphological and optical properties of as-grown ZnO films were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), Raman spectra and photoluminescence (PL) spectra. It is found that the orientation of ZnO films is strongly dependent on the substrate plane. [0 0 0 11, [1 (1) over bar 00] and [11 (2) over bar0] oriented ZnO films are deposited on LiGaO2 (001), (100) and (010), respectively. AFM shows the (0001) ZnO film consists of well-aligned regular hexagonal grains. Raman spectra reveal a tensile stress in the (0 0 0 1) ZnO film and a compressive stress in (110 0) and (112 0) ZnO films. PL spectra of all ZnO films exhibit only a near-band-edge UV emission peak. (C) 2008 Elsevier B.V. All rights reserved.

Study of thin-film SO2 gas sensors by photometric and ellipsometric methods

Pt-, Pd-, and Zr-doped SnO2 thin films and dopant-free VOx films were fabricated by planar magnetron sputtering. Tests for sensitivity to SO2 for all samples were conducted at 180 degreesC, and the sensitivities were investigated ex situ with photometric and ellipsometric methods at room temperature. It was found that the optical sensitivities as well as the sensitive wavelength region for SnO2 films could be tuned by doping. The Pd-doped SnO2 films had good sensitivity in the visible range, and the Zr-doped in the near IR. The dominant sensitive wavelength region for VOx films fell into the visible range, and the ratio of the sensitivity in the visible to that in the near IR increased with O-2/Ar in the depositing atmosphere. (C) 2001 society of Photo-Optical instrumentation Engineers .

Effect of chromium intermediate layer on properties of silver coatings

Coatings with layer structures of Ag/glass, Ag/Cr/glass, and Ag/Cr-Ag/Cr/glass deposited with magnetron sputtering are investigated. The results indicate that the performance for reflectance, hardness, adherence, and humidity durability of the silver coatings with Ag/Cr/glass and Ag/Cr-Ag/Cr/glass structures are better than pure silver film. In addition, the silver coatings with an Ag/Cr-Ag/glass structure present more advantages than that of the Ag/Cr/glass. Reasons are analyzed accordingly. (C) 2004 Society of Photo-Optical Instrumentation Engineers.

磁控反应溅射法制备渐变折射率薄膜的模型分析

阐述了磁控反应溅射法制备渐变折射率薄膜的机理；探讨了磁控反应溅射法制备渐变折射率薄膜的理论模型，给出了渐变折射率薄膜的折射率与反应气体分压的关系，在一定的沉积参数下，由要得到的膜层折射率随膜层几何厚度的变化规律可推导出反应气体分压比随时间的变化规律；最后以制备折射率线性变化的薄膜为例说明了如何推导得到反应气体分压比随时间的变化规律．