射频磁控溅射法制备TiO2-xNX薄膜的结构性能研究

利用射频磁控溅射法室温下在Si（100）衬底上制备了N掺杂的TiO2薄膜，并且采用x射线衍射（XRD）、X射线光电子能谱（XPS）和透射光谱对薄膜进行了表征。XRD结果表明在纯Ar和N2（33．3％）／Ar气氛下制备的TiO2-xNx薄膜均为单一的金红石相，薄膜结晶性良好，呈高度（211）择优取向，而在N2（50．0％）／Ar下制备的薄膜结晶性明显变差；对于N掺杂的TiO2薄膜，XPS表明部分N原子进入TiO2晶格，并且以N—Ti—O、N—O键以及间隙式N原子形式存在；透射光谱表明掺N后的TiO2薄膜吸收边发生了红移。

The visible light-active nitrogen-doped titanium oxide films were deposited on Si (100) substrates at room temperature by RF magnetron sputtering. The films were characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and transmission spectra. XRD reveals that the TiO<inf>2</inf> films grown under pure Ar and N<inf>2</inf> (33.3%)/Ar atmosphere show highly rutile (211) preferred orientation. However, the crystallinity of the film grown under N<inf>2</inf> (50.0%)/Ar decreased greatly. XPS demonstrates that doping N atoms in TiO<inf>2-x</inf>N<inf>x</inf> films exist in three types: N-Ti-O, N-O and interstitial N atoms. Transmission spectra shows that the absorption edge of N-doped TiO<inf>2</inf> film have a red shift. Based on the experiment, it could be concluded that the N doping is effective to narrow the energy gap and enhance photoelectric activities.