Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD

The structural characteristic of cubic GaN (C-GaN) nucleation layers on GaAs(0 0 1) substrates by metalorganic chemical vapor deposition was in detail investigated first by X-ray diffraction (XRD) measurements, using a Huber five-circle diffractometer and an intense synchrotron X-ray source. The XRD results indicate that the C-GaN nucleation layers are highly crystallized. Phi scans and pole figures of the (1 1 1) reflections give a convincing proof that the GaN nucleation layers show exactly cubic symmetrical structure. The GaN(1 1 1) reflections at 54.74degrees in chi are a measurable component, however (002) components parallel to the substrate surface are not detected. Possible explanations are suggested. The pole figures of {1 0 (1) over bar 0} reflections from H-GaN inclusions show that the parasitic H-GaN originates from the C-GaN nucleation layers. The coherence lengths along the close-packed [1 1 1] directions estimated from the (1 1 1) peaks are nanometer order of magnitude. (C) 2002 Elsevier Science B.V. All rights reserved.

Positron-annihilation study of compensation defects in InP

Positron-annihilation lifetime and positron-annihilation Doppler-broadening (PADB) spectroscopies have been employed to investigate the formation of vacancy-type compensation defects in n-type undoped liquid encapsulated Czochrolski grown InP, which undergoes conduction-type conversions under high temperature annealing. N-type InP becomes p-type semiconducting by short time annealing at 700 degreesC, and then turns into n-type again after further annealing but with a much higher resistivity. Long time annealing at 950 degreesC makes the material semi-insulating. Positron lifetime measurements show that the positron average lifetime tau(av) increases from 245 ps to a higher value of 247 ps for the first n-type to p-type conversion and decreases to 240 ps for the ensuing p-type to n-type conversion. The value of tau(av) increases slightly to 242 ps upon further annealing and attains a value of 250 ps under 90 h annealing at 950 degreesC. These results together with those of PADB measurements are explained by the model proposed in our previous study. The correlation between the characteristics of positron annihilation and the conversions of conduction type indicates that the formation of vacancy-type defects and the progressive variation of their concentrations during annealing are related to the electrical properties of the bulk InP material. (C) 2002 American Institute of Physics.

Analysis of the temperature-induced transition to current self-oscillations in doped GaAs/AlAs superlattices

We observed the decrease of the hysteresis effect and the transition from the stable to the dynamic domain regime in doped superlattices with increasing temperature. The current-voltage characteristics and the behaviours of the domain boundary are dominated by the temperature-dependent lineshape of the electric field dependence of the drift velocity (V(F)), As the peak-valley ratio in the V(F) curve decreases with increasing temperature, the hysteresis will diminish and temporal current self-oscillations will occur. The simulated calculation, which takes the difference in V(F) curves into consideration, gives a good agreement with the experimental results.

Photoluminescence from surface-oxidized Ge nanoclusters

Photoluminescence from gas-evaporated Ge nanoclusters consisting of a crystalline core encased in an oxide shell are presented. An as-grown sample shows room temperature luminescence with separate peaks around 357 and 580 nm. Prolonged air exposure of the clusters reduces the Ge core dimensions, and the emission initially at 580 nm shifts to 420 nm; however, the violet luminescence at 357 nm displays no difference. These results indicate that there are two mechanisms involved with light emission from Ge nanoclusters, visible light emission associated with the quantum confinement effect, and violet light emission correlated to luminescent centers. (C) 1998 Elsevier Science B.V.

High energy ion implantation enhanced intermixed quantum well structures and their absorption characteristics in passive optical waveguides

We have shown that high energy ion implantation enhanced intermixing (HE-IIEI) technology for quantum well (QW) structures is a powerful technique which can be used to blue shift the band gap energy of a QW structure and therefore decrease its band gap absorption. Room temperature (RT) photoluminescence (PL) and guided-wave transmission measurements have been employed to investigate the amount of blue shift of the band gap energy of an intermixed QW structure and the reduction of band gap absorption, Record large blue shifts in PL peaks of 132 nm for a 4-QW InGaAs/InGaAsP/InP structure have been demonstrated in the intermixed regions of the QW wafers, on whose non-intermixed regions, a shift as small as 5 nm is observed. This feature makes this technology very attractive for selective intermixing in selected areas of an MQW structure. The dramatical reduction in band gap absorption for the InP based MQW structure has been investigated experimentally. It is found that the intensity attenuation for the blue shifted structure is decreased by 242.8 dB/cm for the TE mode and 119 dB/cm for the TM mode with respect to the control samples. Electro-absorption characteristics have also been clearly observed in the intermixed structure. Current-Voltage characteristics were employed to investigate the degradation of the p-n junction in the intermixed region. We have achieved a successful fabrication and operation of Y-junction optical switches (JOS) based on MQW semiconductor optical amplifiers using HE-IIEI technology to fabricate the low loss passive waveguide. (C) 1997 Published by Elsevier Science B.V.

Research on nitrogen implantation energy dependence of the properties of SIMON materials

With different implantation energies, nitrogen ions were implanted into SIMOX wafers in our work. And then the wafers were subsequently annealed to form separated by implantation of oxygen and nitrogen (SIMON) wafers. Secondary ion mass spectroscopy (SIMS) was used to observe the distribution of nitrogen and oxygen in the wafers. The result of electron paramagnetic resonance (EPR) was suggested by the dandling bonds densities in the wafers changed with N ions implantation energies. SIMON-based SIS capacitors were made. The results of the C-V test confirmed that the energy of nitrogen implantation affects the properties of the wafers, and the optimum implantation energy was determined. (c) 2005 Elsevier B.V. All rights reserved.

基于PLSA模型的文本分割

文本分割在信息提取、文摘自动生成、语言建模、首语消解等诸多领域都有极为重要的应用·基于PLSA模型的文本分割试图使隐藏于片段内的不同主题与文本表面的词、句对建立联系·实验以汉语的整句作为基本块,尝试了多种相似性度量手段及边界估计策略,同时考虑相邻句重复的未登录词对相似值的影响,其最佳结果表明,片段边界的识别错误率为6·06%,远远低于其他同类算法·

太阳能光伏发电技术在金信大厦的应用

太阳能是清洁、可再生能源，是传统化石能源最为重要的替代能源之一。随着全球能源短缺与环境污染的日益加俱，人类开始更加自觉、主动和高效的利用太阳能。太阳能利用技术包括光热利用技术、光电利用技术（又称为“光伏利用技术”）、光化学利用技术，其中光热、光电利用技术已经产业化并开始大规模应用。中国目前是全球最大的光热利用市场，未来中国也将是全球最具发展潜力的光电利用市场。

生物质富氧气化特性的研究

富氧气化是先进的中热值气化方法之一，具有设备体积小、运行稳定等优点。从富氧气化的原理出发，分析氧气浓度、气化当量比等因素对气化结果的影响，并在实验的基础上，分析讨论提高富氧气化经济性和实用性的途径，总结得到循环流化床富氧气化的最佳运行条件：氧气浓度（90±5）%，气化当量比约0.15

施磷对夏玉米土壤硝态氮、吸氮特性及产量的影响

研究不同施磷水平对夏玉米生长期土壤硝态氮时空分布、累积量及玉米籽粒产量的影响,为夏玉米合理施肥提供参考依据。【方法】采用田间小区试验,在施磷水平分别为0,60,120和180 kg/hm2时,研究施磷对夏玉米产量及土壤氮素吸收累积的影响。【结果】在0~110 cm土层,随土壤剖面深度的增加,土壤硝态氮含量逐渐降低,0~30 cm土层明显高于30~110 cm土层且变幅较大,施磷肥能显著降低土壤硝态氮含量。随夏玉米生育期推进,0~110 cm土层硝态氮累积量呈先降低后升高的趋势,于灌浆期达到最低值;当施磷水平为120 kg/hm2时,成熟期0~110 cm土层硝态氮累积量低于施磷60和180 kg/hm2的处理;施磷肥能显著增加玉米籽粒产量、籽粒吸氮量及氮收获指数,均以施磷水平为120 kg/hm2时最高。【结论】在施氮基础上施用磷肥,有利于提高玉米籽粒产量,促进作物对氮素的吸收累积,减少土壤中硝态氮的累积及向更深土层中的运移量。