Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD
Data(s) |
2002
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Resumo |
The structural characteristic of cubic GaN (C-GaN) nucleation layers on GaAs(0 0 1) substrates by metalorganic chemical vapor deposition was in detail investigated first by X-ray diffraction (XRD) measurements, using a Huber five-circle diffractometer and an intense synchrotron X-ray source. The XRD results indicate that the C-GaN nucleation layers are highly crystallized. Phi scans and pole figures of the (1 1 1) reflections give a convincing proof that the GaN nucleation layers show exactly cubic symmetrical structure. The GaN(1 1 1) reflections at 54.74degrees in chi are a measurable component, however (002) components parallel to the substrate surface are not detected. Possible explanations are suggested. The pole figures of {1 0 (1) over bar 0} reflections from H-GaN inclusions show that the parasitic H-GaN originates from the C-GaN nucleation layers. The coherence lengths along the close-packed [1 1 1] directions estimated from the (1 1 1) peaks are nanometer order of magnitude. (C) 2002 Elsevier Science B.V. All rights reserved. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Zheng XH; Feng ZH; Wang YT; Zheng WL; Jia QJ; Jiang XM; Yang H; Liang JW .Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD ,JOURNAL OF CRYSTAL GROWTH,2002,242 (1-2):124-128 |
Palavras-Chave | #半导体材料 #nucleation layers #X-ray diffraction #metalorganic chemical vapor deposition #gallium compounds #nitrides #LIGHT-EMITTING-DIODES #CHEMICAL-VAPOR-DEPOSITION #AIN BUFFER LAYER #GROWN GAN #SAPPHIRE SUBSTRATE #QUALITY #FILMS #BLUE #TEMPERATURE #EVOLUTION |
Tipo |
期刊论文 |