Lifetime prediction for power electronics module substrate mount-down solder interconnect

A numerical modeling method for the prediction of the lifetime of solder joints of relatively large solder area under cyclic thermal-mechanical loading conditions has been developed. The method is based on the Miner's linear damage accumulation rule and the properties of the accumulated plastic strain in front of the crack in large area solder joint. The nonlinear distribution of the damage indicator in the solder joints have been taken into account. The method has been used to calculate the lifetime of the solder interconnect in a power module under mixed cyclic loading conditions found in railway traction control applications. The results show that the solder thickness is a parameter that has a strong influence on the damage and therefore the lifetime of the solder joint while the substrate width and the thickness of the baseplate are much less important for the lifetime

Multi-software modeling technique for field distribution propagation through an optical vertical interconnect assembly

Embedded siloxane polymer waveguides have shown promising results for use in optical backplanes. They exhibit high temperature stability, low optical absorption, and require common processing techniques. A challenging aspect of this technology is out-of-plane coupling of the waveguides. A multi-software approach to modeling an optical vertical interconnect (via) is proposed. This approach utilizes the beam propagation method to generate varied modal field distribution structures which are then propagated through a via model using the angular spectrum propagation technique. Simulation results show average losses between 2.5 and 4.5 dB for different initial input conditions. Certain configurations show losses of less than 3 dB and it is shown that in an input/output pair of vias, average losses per via may be lower than the targeted 3 dB.

Test patterns NBS-28 and NBS-28A : random fault interconnect step coverage and other structures /

S/N 003-003-02297-7.

Analysis of the effect of transverse modes on free-space optical interconnect performance

Vertical-cavity surface-emitting lasers (VCSELs) and microlenses can be used to implement free space optical interconnects (FSOIs) which do not suffer from the bandwidth limitations inherent in metallic interconnects. A comprehensive link equation describing the effects of both optical and electrical noise is introduced. We have evaluated FSOI performance by examining the following metrics: the space-bandwidth product (SBP), describing the density of channels and aggregate bandwidth that can be achieved, and the carrier-to-noise ratio (CNR), which represents the relative strength of the carrier signal. The mode expansion method (MEM) was used to account for the primary cause of optical noise: laser beam diffraction. While the literature commonly assumes an ideal single-mode laser beam, we consider the experimentally determined multimodal structure of a VCSEL beam in our calculations. It was found that maximum achievable interconnect length and density for a given CNR was significantly reduced when the higher order transverse modes were present in Simulations. However, the Simulations demonstrate that free-space optical interconnects are still a suitable solution for the communications bottleneck, despite the adverse effects introduced by transverse modes.

Nanowires for 3d silicon interconnection – low temperature compliant nanowire-polymer film for z-axis interconnect

Semiconductor chip packaging has evolved from single chip packaging to 3D heterogeneous system integration using multichip stacking in a single module. One of the key challenges in 3D integration is the high density interconnects that need to be formed between the chips with through-silicon-vias (TSVs) and inter-chip interconnects. Anisotropic Conductive Film (ACF) technology is one of the low-temperature, fine-pitch interconnect method, which has been considered as a potential replacement for solder interconnects in line with continuous scaling of the interconnects in the IC industry. However, the conventional ACF materials are facing challenges to accommodate the reduced pad and pitch size due to the micro-size particles and the particle agglomeration issue. A new interconnect material - Nanowire Anisotropic Conductive Film (NW-ACF), composed of high density copper nanowires of ~ 200 nm diameter and 10-30 µm length that are vertically distributed in a polymeric template, is developed in this work to tackle the constrains of the conventional ACFs and serves as an inter-chip interconnect solution for potential three-dimensional (3D) applications.