Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology
| Data(s) |
15/12/2004
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|---|---|
| Identificador |
http://dx.doi.org/10.1063/1.1811780 http://www.scopus.com/inward/record.url?scp=19944365181&partnerID=8YFLogxK |
| Idioma(s) |
eng |
| Direitos |
info:eu-repo/semantics/restrictedAccess |
| Fonte |
McNally , P J , Kanatharana , J , Toh , B H W , McNeill , D , Danilewsky , A N , Tuomi , T , Knuuttila , L , Riikonen , J , Toivonen , J & Simon , R 2004 , ' Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology ' Journal of Applied Physics , vol 96(12) , no. 12 , 7 , pp. 7596-7602 . DOI: 10.1063/1.1811780 |
| Palavras-Chave | #/dk/atira/pure/subjectarea/asjc/3100/3101 #Physics and Astronomy (miscellaneous) #/dk/atira/pure/subjectarea/asjc/3100 #Physics and Astronomy(all) |
| Tipo |
article |
