993 resultados para High reflectance


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Drinking water scarcity is a major issue that needs to be addressed seriously. Water needs to be purified from organic pollutants and bacterial contamination. In this study, sunlight driven photocatalysis for the degradation of dyes and bacterial inactivation has been conducted over TiO2 nanoparticles (CST) and TiO2 nanobelts (CSTNB). TiO2 nanoparticles were synthesized by a solution combustion process using ascorbic acid as a fuel. Acid etched TiO2 nanobelts (CSTNB) were synthesized using combustion synthesized TiO2 as a novel precursor. The mechanism of formation of TiO2 nanobelts was hypothesized. The antibacterial activity of combustion synthesized TiO2 and acid etched TiO2 nanobelts were evaluated against Escherichia coli and compared against commercial TiO2. Various characterization studies like X-ray diffraction analysis, BET surface area analysis, diffused reflectance measurements were performed. Microscopic structures and high resolution images were analyzed using scanning electron microscopy, transmission electron microscopy. The extent of photo-stability and reusability of the catalyst was evaluated by conducting repeated cycles of photo degradation experiments and was compared to the commercial grade TiO2. The reactive radical species responsible for high photocatalytic and antibacterial activity has been determined by performing multiple scavenger reactions. The excellent charge transfer mechanism, high generation of hydroxyl and hole radicals resulted in enhanced photocatalytic activity of the acid etched TiO2 nanobelts compared to commercial TiO2 and nanobelts made from commercial TiO2.

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The current study reports on the synthesis and characterization of a new inorganic nano-pigment with an intense blue color and high solar radiation reflective properties (70%). The nano-pigment YIn0.9Mn0.1O3-ZnO was synthesized by a sol-gel combustion method and characterized with the aid of X-Ray diffraction, Raman spectroscopy, Magnetic susceptibility, Transmission electron microscopy, UV ndash;vis-NIR diffuse reflectance spectroscopy and CIE-1976 L*a*b* color measurements. The Rietveld refinement of the XRD patterns of the developed nano-pigment disclosed the existence of YIn0.9Mn0.1O3 and ZnO in a 1:1 ratio with hexagonal crystal structures. For comparison, YIn0.9Mn0.1O3 was also synthesized by the sol gel combustion route and its optical properties compared with that of YIn0.9Mn0.1O3-ZnO. It is interesting to note that the developed YIn0.9Mn0.1O3-ZnO nano-pigmeht exhibits superior blue hue (b* = -40.55) and solar reflectance (R* = 70%) values as compared to the YIn0.9Mn0.1O3 nano-pigment (b* = -22.28, R* = 50%). Most importantly, the potential utility of the nano-pigment as a ``Cool Pigment'' was demonstrated by coating onto roofing materials like aluminum roofing sheets. (C) 2015 Elsevier Ltd. All rights reserved.

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Smooth thin films of three kinds of nickel(II)-azo complexes were prepared by the spin-coating method. Absorption spectra of the thin films on K9 glass substrate in the 300-600 nn wavelength region were measured. Optical constants (complex refractive index N = n + ik) and thickness of the thin films prepared on single-crystal silicon substrate in the 300-600 nm wavelength region were investigated on rotating analyzer-polarizer type of scanning ellipsometer, and dielectric constants epsilon (epsilon = epsilon(1) + i epsilon(2)), absorption coefficients a as well as reflectance R of thin films were then calculated at 405 nm. In addition, in order to examine the possible use of nickel(II)-azo complex thin film as an optical recording medium, one of the nickel(II)-azo complex thin film prepared on K9 glass substrate with an Ag reflective layer was also studied by atomic force microscopy and static optical recording. The results show that the nickel(II)-azo complex thin film is smooth and has a root mean square surface roughness of 2.25 nm, and the recording marks on the nickel(II)-azo complex thin film are very clear and circular, and their size can reach 200 nn or less. (c) 2006 Elsevier Ltd. All rights reserved.

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The single-sided and dual-sided high reflective mirrors were deposited with ion-beam sputtering (IBS). When the incident light entered with 45 degrees, the reflectance of p-polarized light at 1064 nm exceeded 99.5%. Spectrum was gained by spectrometer and weak absorption of coatings was measured by surface thermal lensing (STL) technique. Laser-induced damage threshold (LIDT) was determined and the damage morphology was observed with Lecia-DMRXE microscope simultaneously. The profile of coatings was measured with Mark III-GPI digital interferometer. It was found that the reflectivity of mirror exceeded 99.9% and its absorption was as low as 14 ppm. The reflective bandwidth of the dual-sided sample was about 43 nm wider than that of single-sided sample, and its LIDT was as high as 28 J/cm2, which was 5 J/cm2 higher than that of single-sided sample. Moreover, the profile of dual-sided sample was better than that of substrate without coatings.

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Influence of ZrO2 in HfO2 on the reflectance of HfO2/SiO2 multilayer at 248 nm was investigated. Two kinds of HfO2 with different ZrO2 content were chosen as high refractive index material and the same kind of SiO2 as low refractive index material to prepare the mirrors by electron-beam evaporation. The impurities in two kinds of HfO2 starting coating materials and in their corresponding single layer thin films were determined through glow discharge mass spectrum (GDMS) technology and secondary ion mass spectrometry (SIMS) equipment, respectively. It showed that between the two kinds of HfO2, either the bulk materials or their corresponding films, the difference of ZrO2 was much larger than that of the other impurities such as Ti and Fe. It is the Zr element that affects the property of thin films. Both in theoretical and in experimental, the mirror prepared with the HfO2 starting material containing more Zr content has a lower reflectance. Because the extinction coefficient of zirconia is relatively high in UV region, it can be treated as one kind of absorbing defects to influence the optical property of the mirrors. (C) 2008 Elsevier B.V. All rights reserved.

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Plant growth at extremely high elevations is constrained by high daily thermal amplitude, strong solar radiation and water scarcity. These conditions are particularly harsh in the tropics, where the highest elevation treelines occur. In this environment, the maintenance of a positive carbon balance involves protecting the photosynthetic apparatus and taking advantage of any climatically favourable periods. To characterize photoprotective mechanisms at such high elevations, and particularly to address the question of whether these mechanisms are the same as those previously described in woody plants along extratropical treelines, we have studied photosynthetic responses in Polylepis tarapacana Philippi in the central Andes (18 degrees S) along an elevational gradient from 4300 to 4900 m. For comparative purposes, this gradient has been complemented with a lower elevation site (3700 m) where another Polylepis species (P. rugulosa Bitter) occurs. During the daily cycle, two periods of photosynthetic activity were observed: one during the morning when, despite low temperatures, assimilation was high; and the second starting at noon when the stomata closed because of a rise in the vapour pressure deficit and thermal dissipation is prevalent over photosynthesis. From dawn to noon there was a decrease in the content of antenna pigments (chlorophyll b and neoxanthin), together with an increase in the content of xanthophyll cycle carotenoids. These results could be caused by a reduction in the antenna size along with an increase in photoprotection. Additionally, photoprotection was enhanced by a partial overnight retention of de-epoxized xanthophylls. The unique combination of all of these mechanisms made possible the efficient use of the favourable conditions during the morning while still providing enough protection for the rest of the day. This strategy differs completely from that of extratropical mountain trees, which uncouple light-harvesting and energy-use during long periods of unfavourable, winter conditions.

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The properties of electron states in the presence of microwave irradiation play a key role in understanding the oscillations of longitudinal resistance and the zero-resistance states in a high-mobility two-dimensional electron gas(2DEG) in low magnetic field. The properties of electron states in a high-mobility and low-density GaAs/Al0.35Ga0.65As 2DEG in the presence of Ka-band microwave irradiation were studied by reflectance-based optically detected cyclotron resonance(RODCR). The influences of the direction of microwave alternating electronic field, wavelength of the laser, and temperature on RODCR results were discussed. The results show that RODCR measurements provide a convenient and powerful method for studying electron states in 2DEG.

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The thermal stability of InN in the growth environment in metalorganic chemical vapor deposition was systematically investigated in situ by laser reflectance system and ex situ by morphology characterization, X-ray diffraction and X-ray photoelectron spectroscopy. It was found that InN can withstand isothermal annealing at temperature as high as 600 degrees C in NH3 ambient. While in N-2 atmosphere, it will decompose quickly to form In-droplets at least at the temperature around 500 degrees C, and the activation energy of InN decomposition was estimated to be 2.1 +/- 0.1 eV. Thermal stability of InN when annealing in NH3 ambient during temperature altering would be very sensitive to ramping rate and NH3 flow rate, and InN would sustain annealing process at small ramping rate and sufficient supply of reactive nitrogen radicals. Whereas In-droplets formation was found to be the most frequently encountered phenomenon concerning InN decomposition, annealing window for conditions free of In-droplets was worked out and possible reasons related are discussed. In addition, InN will decompose in a uniform way in the annealing window, and the decomposition rate was found to be in the range of 50 and 100 nm/h. Hall measurement shows that annealing treatment in such window will improve the electrical properties of InN. (c) 2005 Elsevier B.V. All rights reserved.

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The Principle of optical thin film was used to calculate the feasibility of improving the light extraction efficiency of GaN/GaAs optical devices by wafer-bonding technique. The calculated results show that the light extraction efficiency of bonded samples can be improved by 2.66 times than the as-grown GaN/GaAs samples when a thin Ni layer was used as adhesive layer and Ag layer as reflective layer. Full reflectance spectrum comparison shows that reflectivity for the incident light of 459.2 nm of the bonded samples was improved by 2.4 times than the as-grown samples, which is consistent with the calculated results.

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The Principle of optical thin film was used to calculate the feasibility of improving the light extraction efficiency of GaN/GaAs optical devices by wafer-bonding technique. The calculated results show that the light extraction efficiency of bonded samples can be improved by 2.66 times than the as-grown GaN/GaAs samples when a thin Ni layer was used as adhesive layer and Ag layer as reflective layer. Full reflectance spectrum comparison shows that reflectivity for the incident light of 459.2 nm of the bonded samples was improved by 2.4 times than the as-grown samples, which is consistent with the calculated results.

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In this work, we have adopted reflectance difference spectroscopy to study the evolution of InAs layer grown at different temperatures in GaAs matrix. Associated with the two- to three-dimensional growth transition of InAs layer, the transition energies and the in-plane optical anisotropy of InAs wetting layer exhibit abrupt changes. This provides a new way to decide the critical thickness h(c) for the growth transition. The obtained h(c)s are compared with those determined by atomic force microscope measurement, and discrepancy is found at high temperatures. The origin of the difference is clarified and the variations in hc with temperature are further discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3494043]

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Co-electrolysis of carbon dioxide and steam has been shown to be an efficient way to produce syngas, however further optimisation requires detailed understanding of the complex reactions, transport processes and degradation mechanisms occurring in the solid oxide cell (SOC) during operation. Whilst electrochemical measurements are currently conducted in situ, many analytical techniques can only be used ex situ and may even be destructive to the cell (e.g. SEM imaging of microstructure). In order to fully understand and characterise co-electrolysis, in situ monitoring of the reactants, products and SOC is necessary. Diffuse Reflectance Infrared Fourier Transform Spectroscopy (DRIFTS) is ideal for in situ monitoring of co-electrolysis as both gaseous and adsorbed CO and CO2 species can be detected, however it has previously not been used for this purpose. The challenges of designing an experimental rig which allows optical access alongside electrochemical measurements at high temperature and operates in a dual atmosphere are discussed. The rig developed has thus far been used for symmetric cell testing at temperatures from 450[degree]C to 600[degree]C. Under a CO atmosphere, significant changes in spectra were observed even over a simple Au|10Sc1CeSZ|Au SOC. The changes relate to a combination of CO oxidation, the water gas shift reaction and carbonate formation and decomposition processes, with the dominant process being both potential and temperature dependent.

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The use of an acid violet 7 (AV7) smart ink to assess the activity of photocatalytic paint is demonstrated. A linear correlation is established between the change in oxidized dye concentration, as measured by diffuse reflectance, and the change in the green component of the RGB color values, obtained using a portable hand-held scanner, suggesting that such tests can be monitored easily using an inexpensive piece of hand-held office equipment, as opposed to an expensive lab-based instrument, such as a diffuse reflectance UV/vis spectrophotometer. The bleaching of the AV7 follows first order kinetics, at a rate that is linearly dependent upon the UVA irradiance (0.30–3.26 mW cm–2). A comparison of relative rate of bleaching of the AV7 ink with the relative rate of removal of NOx, as determined using the ISO test (ISO 22197-1:2007), established a linear relationship between the two sets of results and the relevance of this correlation is discussed briefly.

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An ultrathin layer of metasurface that almost completely annihilates the reflection of light (>99.5%) over a wide range of incident angles (>80°) is experimentally demonstrated. Such zero-reflectance metafilms exhibit optimal performance for plasmonic sensing, since their sensitivity to changes of local refractive index is far superior to films of nonzero reflectance. Since both main detection mechanisms tracking intensity changes and wavelength shifts are improved, zero-reflectance metafilms are optimal for localized surface plasmon resonance molecular sensing. Such nanostructures have significant opportunities in many areas, including enhanced light harvesting as well as in developing high-performance molecular sensors for a wide range of chemical and biomedical applications.