Design, Manufacture and Performance of Germanium Bipolar Transistors

Germanium NPN bipolar transistors have been manufactured using phosphorus and boron ion implantation processes. Implantation and subsequent activation processes have been investigated for both dopants. Full activation of phosphorus implants has been achieved with RTA schedules at 535?C without significant junction diffusion. However, boron implant activation was limited and diffusion from a polysilicon source was not practical for base contact formation. Transistors with good output characteristics were achieved with an Early voltage of 55V and common emitter current gain of 30. Both Silvaco process and device simulation tools have been successfully adapted to model the Ge BJT(bipolar junction transistor) performance.

No Evidence that Extended Tracts of Homozygosity are Associated with Alzheimer’s Disease.

We sought to investigate the contribution of extended runs of homozygosity in a genome-wide association dataset of 1,955 Alzheimer's disease cases and 955 elderly screened controls genotyped for 529,205 autosomal single nucleotide polymorphisms. Tracts of homozygosity may mark regions inherited from a common ancestor and could reflect disease loci if observed more frequently in cases than controls. We found no excess of homozygous tracts in Alzheimer's disease cases compared to controls and no individual run of homozygosity showed association to Alzheimer's disease.

Determining propeller induced erosion alongside quay walls in harbours using Artificial Neural Networks

In shallow waters, such as those found close to berth structures, the wash from a manoeuvring ship’s propeller can cause erosion of the seabed. This erosion can be increased if the wash intersects a berth structure. A number of researchers have undertaken model studies and used regression analysis to develop predictive relationships for the scouring action. This paper presents an experimental investigation with Artificial Neural Networks (ANN’s), used to analyse the results. The purpose of using ANN’s was to examine the prediction accuracy of the Networks in comparison with previous regression analysis methods. ANN’s were found to provide a more accurate method of predicting propeller wash scour than the equations presented by previous investigators.

An effective method for comparing the turbulence intensity from LDA measurements and CFD predictions within a ship propeller jet

The mean velocity and turbulence intensity are the two main inputs to investigate the ship propeller induced seabed scouring resulting from a vessel is manoeuvring within a port where the underkeel clearances are low. More accurate data including the turbulence intensity is now available by using the laser doppler anemometry (LDA) measurement system and computational fluid dynamics (CFD) approach. Turbulence intensity has a loose definition, which is the velocity fluctuation as the root mean square (RMS) referenced to a mean flow velocity. However, the velocity fluctuation and mean velocity can be the overall value includingx, y and z directions or the value of a single component. LDA and CFD results were obtained from two different acquisition systems (Dantec LDA system and Fluent CFD package) and therefore the outputs cannot be compared directly. An effective method is proposed for comparing the turbulence intensity between the experimental measurements and the computational predictions within a ship propeller jet. The flow patterns of turbulence intensity within a ship propeller jet are presented by using the LDA measurements and CFD results from turbulence models of standard k-e, RNG k-e, realizable k–e, standard k–?, SST k–?and Reynolds stresses.

Multiple self-aligned iron nanowires by a dual selective chemical vapor deposition process

We have demonstrated a self-aligned process to fabricate organized iron nanowires on a planarized surface with wire dimensions down to 50 nm. Polishing was used to expose an alternating silicon silicon dioxide edge and a dual selective metal deposition process produced the nanowires. The initial selective deposition produced a tungsten layer on the exposed polysilicon regions. The discovery that selective chemical vapor deposition of iron from Fe(CO)(5) precursor on dielectric surfaces over tungsten surfaces is the key factor that enables the self-alignment of the iron nanowires. Dimensions of the wires are determined by the thickness of the thermal oxide. (c) 2007 The Electrochemical Society.