Ultrafast Kerr rotations and zero-field dephasing time of electron spins in InAs/GaAs quantum disks

Time-resolved Kerr rotation (TRKR) measurements based on pump-probe arrangement were carried out at 5 K on the monolayer fluctuation induced InAs/GaAs quantum disks grown on GaAs substrate without external magnetic field. The lineshape of TRKR signals shows an unusual dependence on the excitation wavelength, especially antisymmetric step-shaped structures appearing when the excitation wavelength was resonantly scanned over the heavy- and light-hole subbands. Moreover, these step structures possess an almost identical decay time of similar to 40 Ps which is believed to be the characteristic spin dephasing time of electrons in the extremely narrow InAs/GaAs quantum disks.

HIGH-QUALITY INGAP AND INGAP/INALP MULTIPLE-QUANTUM-WELL GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

Using gas-source molecular beam epitaxy, we have obtained high-quality GaInP and (AlGa)InP epilayers lattice-matched to (100) GaAs substrates. All grown layers exhibited mirror-like surfaces. For a 1.7 mum thick Ga0.5In0.5P film, the Hall electron mobility was 3400 and 30,000 CM2/V. s at 300 and 77 K, respectively. The luminescence wavelength of (AlxGa1-x)InP samples ranged from 680 nm (for GaInP) to 590 nm (for AlInP) at room temperature, and from 644 to 513 nm at 77 K. The multiple quantum well (MQW) structure with well width of 40 angstrom showed strong luminescence intensity with wavelength of 647 nm (300 K) or 622 nm (80 K). The satellite peaks can be detected in double-crystal X-ray (DCXR) diffraction measurements of the MQW samples, which indicates the perfect structural periodicity.

A NEW TYPE OF SILICON-ON-INSULATOR WITH A PERFECT SURFACE SILICON LAYER

A novel silicon structure consisting of a silicon-on-defect layer (SODL), with enhanced surface Hall mobility in the surface layer on a buried defect layer (DL), has been discovered [J. Li, Nucl. Instr. and Meth. B59/60 (1991) 1053]. SODL material was formed by using proton implantation and subsequent two-step annealing. The implantation was carried out with a Varian 350D ion implanter. Based on the discovery, a standard measurement method (current-voltage curve method) was adopted to measure the true resistivity value of the DL in order to replace the spreading resistivity measurement by which the true resistivity in seriously defective silicon cannot be obtained. By adopting the current-voltage current method, the true resistivity value of the DL is measured to be 4.2 x 10(9) OMEGA cm. The SODL material was proved to be a silicon-on-insulator substrate.

Electronic structure of quantum spheres and quantum wires

The electronic structures of quantum spheres and quantum wires are studied in the framework of the effective-mass theory. The spin-orbital coupling (SOC) effect is taken into account. On the basis of the zero SOC limit and strong SOC limit the hole quantum energy levels as functions of SOC parameter lambda are obtained. There is a fan region in which the ground and low-lying excited states approach those in the strong SOC limit as lambda increases. Besides, some theoretical results on the corrugated superlattices (CSL) are given.

Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells

The valence hole subbands, TE and TM mode optical gains, transparency carrier density, and radiative current density of the zinc-blende GaN/Ga0.85Al0.15N strained quantum well (100 Angstrom well width) have been investigated using a 6 X 6 Hamiltonian model including the heavy hole, Light hole, and spin-orbit split-off bands. At the k = 0 point, it is found that the light hole strongly couples with the spin-orbit split-off hole, resulting in the so+lh hybrid states. The heavy hole does not couple with the light hole and the spin-orbit split-off hole. Optical transitions between the valence subbands and the conduction subbands obey the Delta n=0 selection rule. At the k not equal 0 points, there is strong band mixing among the heavy hole, light hole, and spin-orbit split-off hole. The optical transitions do not obey the Delta n=0 selection rule. The compressive strain in the GaN well region increases the energy separation between the so1+lh1 energy level and the hh1 energy level. Consequently, the compressive strain enhances the TE mode optical gain, and strongly depresses the TM mode optical gain. Even when the carrier density is as large as 10(19) cm(-3), there is no positive TM mode optical gain. The TE mode optical gain spectrum has a peak at around 3.26 eV. The transparency carrier density is 6.5 X 10(18) cm(-3), which is larger than that of GaAs quantum well. The compressive strain overall reduces the transparency carrier density. The J(rad) is 0.53 kA/cm(2) for the zero optical gain. The results obtained in this work will be useful in designing quantum well GaN laser diodes and detectors. (C) 1996 American Institute of Physics.

Electronic structures of the zinc-blende GaN/Ga1-xAlxN compressively strained superlattices and quantum wells

The electronic structures of the zinc-blende GaN/Ga0.85Al0.15N compressively strained superlattices and quantum wells are investigated using a 6 x 6 Hamiltonian model (including the heavy hole, light hole and spin-orbit splitting band). The energy bands, wavefunctions and optical transition matrix elements are calculated. It is found that the light hole couples with the spin-orbit splitting state even at the k=0 point, resulting in the hybrid states. The heavy hole remains a pure heavy hole state at k=0. The optical transitions from the hybrid valence states to the conduction states are determined by the transitions of the light hole and spin-orbit splitting states to the conduction states. The transitions from the heavy hole, light hole and spin-orbit splitting states to the conduction states obey the selection rule Delta n=0. The band structures obtained in this work will be valuable in designing GaN/GaAlN based optoelectronic devices. (C) 1996 Academic Press Limited

Optical gain in zinc-blende GaN/Ga1-xAlxN strained quantum well laser

Based on the valence subbands of the zinc-blende GaN/Ga0.85Al0.15N strained quantum wells obtained by a 6x6 Hamiltonian (including heavy hole, light hole and spin-orbit splitting band), optical gain and radiative current density are calculated for the strained quantum well laser structures. The compressive strain in the GaN well region strongly depresses the TM mode optical gain and enhances the TE mode optical gain.

Nano-layer structure of silicon-on-insulator materials

Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits. In the present paper, three novel SOI nano-layer structures have been demonstrated. ULTRA-THIN SOI has been fabricated by separation by implantation of oxygen (SIMOX) technique at low oxygen ion energy of 45 keV and implantation dosage of 1.81017/cm2. The formed SOI layer is uniform with thickness of only 60 nm. This layer is of crystalline quality. and the interface between this layer and the buried oxide layer is very sharp, PATTERNED SOI nanostructure is illustrated by source and drain on insulator (DSOI) MOSFETs. The DSOI structure has been formed by selective oxygen ion implantation in SIMOX process. With the patterned SOI technology, the floating-body effect and self-heating effect, which occur in the conventional SOI devices, are significantly suppressed. In order to improve the total-dose irradiation hardness of SOI devices, SILICON ON INSULATING MULTILAYERS (SOIM) nano-structure is proposed. The buried insulating multilayers, which are composed of SiOx and SiNy layers, have been realized by implantation of nitride and oxygen ions into silicon in turn at different ion energies, followed by two steps of high temperature annealing process, respectively, Electric property investigation shows that the hardness to the total-dose irradiation of SOIM is remarkably superior to those of the conventional SIMOX SOI and the Bond-and-Etch-Back SOI.

Spin splitting modulated by uniaxial stress in InAs nanowires

We theoretically study the electronic structure, spin splitting, effective mass, and spin orientation of InAs nanowires with cylindrical symmetry in the presence of an external electric field and uniaxial stress. Using an eight-band k center dot p theoretical model, we deduce a formula for the spin splitting in the system, indicating that the spin splitting under uniaxial stress is a nonlinear function of the momentum and the electric field. The spin splitting can be described by a linear Rashba model when the wavevector and the electric field are sufficiently small. Our numeric results show that the uniaxial stress can modulate the spin splitting. With the increase of wavevector, the uniaxial tensile stress first restrains and then amplifies the spin splitting of the lowest electron state compared to the no strain case. The reverse is true under a compression. Moreover, strong spin splitting can be induced by compression when the top of the valence band is close to the bottom of the conductance band, and the spin orientations of the electron stay almost unchanged before the overlap of the two bands.

Quantum-mechanical calculations of vibrationally resolved cross sections for non-dissociative charge transfer of O3+ with H-2

Charge transfer due to collisions of ground state O3+ (2s(2)2p P-2) ions with molecular hydrogen is investigated using the quantum-mechanical molecular-orbital close-coupling (MOCC) method, and electronic and vibrational state-selective cross sections along with the corresponding differential cross sections are calculated for projectile energies of 100, 500, 1000 and 5000 eV/u at the orientation angles of 25 degrees,45 degrees and 89 degrees. The adiabatic potentials and radial coupling matrix elements utilized in the QMOCC calculations were obtained with the spin-coupled valence-bond approach. The infinite order sudden approximation (IOSA) and the vibrational sudden approximation (VSA) are utilized to deal with the rotation of H-2 and the coupling between the electron and the vibration of H-2. It is found that the distribution of vibrationally resolved cross sections with the vibrational quantum number upsilon' of H-2(+) (upsilon') varies with the increment of the projectile energy; and the electronic and vibrational stateselective differential cross sections show similar behaviors: there is a highest platform within a very small scattering angle, beyond which the differential cross sections decrease as the scattering angle increases and lots of oscillating structures appear, where the scattering angle of the first structure decreases as E-P(-1/2) with the increment of the projectile energy E-P; and the structure and amplitude of the differential cross sections are sensitive to the orientation of molecule H-2, which provides a possibility to identify the orientations of molecule H-2 by the vibrational state-selective differential scattering processes.

Predicting the position of the spin-forbidden band for Tb3+ ions in crystal hosts

The energy difference DeltaE between the spin-allowed and spin-forbidden states of Tb3+ in crystals is studied. The environmental factor he representing the character of the host is redefined by using the chemical band of complex crystals. The relationship between h(e) and DeltaE is found to be a linear relation. The results show that the energy difference between the spin-forbidden and spin-allowed states for Tb3+ ions in crystals can be predicted from the environmental factor.

Accelerating self-consistent field convergence with the augmented Roothaan-Hall energy function.

Based on Pulay's direct inversion iterative subspace (DIIS) approach, we present a method to accelerate self-consistent field (SCF) convergence. In this method, the quadratic augmented Roothaan-Hall (ARH) energy function, proposed recently by Høst and co-workers [J. Chem. Phys. 129, 124106 (2008)], is used as the object of minimization for obtaining the linear coefficients of Fock matrices within DIIS. This differs from the traditional DIIS of Pulay, which uses an object function derived from the commutator of the density and Fock matrices. Our results show that the present algorithm, abbreviated ADIIS, is more robust and efficient than the energy-DIIS (EDIIS) approach. In particular, several examples demonstrate that the combination of ADIIS and DIIS ("ADIIS+DIIS") is highly reliable and efficient in accelerating SCF convergence.

Beam-target double-spin asymmetry A{LT} in charged pion production from deep inelastic scattering on a transversely polarized {3}He target at 1.4

We report the first measurement of the double-spin asymmetry A{LT} for charged pion electroproduction in semi-inclusive deep-inelastic electron scattering on a transversely polarized {3}He target. The kinematics focused on the valence quark region, 0.16spin-orbit correlations. Our results indicate a positive azimuthal asymmetry for π{-} production on {3}He and the neutron, while our π{+} asymmetries are consistent with zero.

Intermolecular Multiple Quantum Coherences Enable Accurate Thermal Imaging of Red Bone Marrow During Thermal Therapy of Bone Metastases

Prostate and breast cancers are two of the most common types of cancer in the United States, and those cancers metastasize to bone in more than two thirds of patients. Recent evidence suggests that thermal therapy is effective at treating metastatic bone cancer. For example, thermal therapy enables targeted drug delivery to bone, ablation of cancer cells in bone marrow, and palliation of bone pain. Thermal therapy of bone metastases would be greatly improved if it were possible to image the temperature of the tissue surrounding the disease, which is usually red bone marrow (RBM). Unfortunately, current thermal imaging techniques are inaccurate in RBM.

This dissertation shows that many of the difficulties with thermal imaging of RBM can be overcome using a magnetic resonance phenomenon called an intermolecular multiple quantum coherence (iMQC). Herein, iMQCs are detected with a magnetic resonance imaging (MRI) pulse sequence called multi-spin-echo HOMOGENIZED with off resonance transfer (MSE-HOT). Compared to traditional methods, MSE-HOT provided ten-fold more accurate images of temperature change. Furthermore, MSE-HOT was translated to a human MRI scanner, which enabled imaging of RBM temperature during heating with a clinical focused ultrasound applicator. In summary, this dissertation develops a MRI technique that enables thermal imaging of RBM during thermal therapy of bone metastases.