Electronic structures of the zinc-blende GaN/Ga1-xAlxN compressively strained superlattices and quantum wells
Data(s) |
1996
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Resumo |
The electronic structures of the zinc-blende GaN/Ga0.85Al0.15N compressively strained superlattices and quantum wells are investigated using a 6 x 6 Hamiltonian model (including the heavy hole, light hole and spin-orbit splitting band). The energy bands, wavefunctions and optical transition matrix elements are calculated. It is found that the light hole couples with the spin-orbit splitting state even at the k=0 point, resulting in the hybrid states. The heavy hole remains a pure heavy hole state at k=0. The optical transitions from the hybrid valence states to the conduction states are determined by the transitions of the light hole and spin-orbit splitting states to the conduction states. The transitions from the heavy hole, light hole and spin-orbit splitting states to the conduction states obey the selection rule Delta n=0. The band structures obtained in this work will be valuable in designing GaN/GaAlN based optoelectronic devices. (C) 1996 Academic Press Limited |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Fan WJ; Li MF; Chong TC; Xia JB .Electronic structures of the zinc-blende GaN/Ga1-xAlxN compressively strained superlattices and quantum wells ,SUPERLATTICES AND MICROSTRUCTURES,1996,19(4):251-261 |
Palavras-Chave | #半导体物理 #GALLIUM NITRIDE #GAN #RESONANCE |
Tipo |
期刊论文 |