Optical gain in zinc-blende GaN/Ga1-xAlxN strained quantum well laser


Autoria(s): Fan WJ; Li MF; Chong TC; Xia JB
Data(s)

1996

Resumo

Based on the valence subbands of the zinc-blende GaN/Ga0.85Al0.15N strained quantum wells obtained by a 6x6 Hamiltonian (including heavy hole, light hole and spin-orbit splitting band), optical gain and radiative current density are calculated for the strained quantum well laser structures. The compressive strain in the GaN well region strongly depresses the TM mode optical gain and enhances the TE mode optical gain.

Identificador

http://ir.semi.ac.cn/handle/172111/15425

http://www.irgrid.ac.cn/handle/1471x/101751

Idioma(s)

英语

Fonte

Fan WJ; Li MF; Chong TC; Xia JB .Optical gain in zinc-blende GaN/Ga1-xAlxN strained quantum well laser ,SOLID STATE COMMUNICATIONS ,1996,98(8):737-740

Palavras-Chave #半导体物理 #quantum wells #semiconductors #electronic band structure #GAN
Tipo

期刊论文