Silicon nanowire arrays coupled with cobalt phosphide spheres as low-cost photocathodes for efficient solar hydrogen evolution

We demonstrate the first example of silicon nanowire array photocathodes coupled with hollow spheres of the emerging earth-abundant cobalt phosphide catalysts. Compared to bare silicon nanowire arrays, the hybrid electrodes exhibit significantly improved photoelectrochemical performance toward the solar-driven H2 evolution reaction.

A systematic study of the structural and magnetic properties of Mn-, Co-, and Ni-Doped Colloidal Fe3O4 nanoparticles

A series of colloidal MxFe3-xO4 (M = Mn, Co, Ni; x = 0–1) nanoparticles with diameters ranging from 6.8 to 11.6 nm was synthesized by hydrothermal reaction in aqueous medium at low temperature (200 °C). Energy-dispersive X-ray microa-nalysis and inductively coupled plasma spectrometry confirms that the actual elemental compositions agree well with the nominal ones. The structural properties of obtained nanoparticles were investigated by using powder X-ray diffraction, Raman scattering, Mössbauer spectroscopy, and electron microscopy. The results demonstrate that our synthesis technique leads to the formation of chemically uniform single-phase solid solution nanoparticles with cubic spinel structure, confirming the intrinsic doping. Magnetic studies showed that, in comparison to Fe3O4, the saturation magnetization of MxFe3-xO4 (M = Mn, Ni) decreases with increasing dopant concentration, while Co-doped samples showed similar saturation magnetizations. On other hand, whereas Mn- and Ni-doped nanoparticles exhibits superparamagnetic behavior at room temperature, ferromagnetism emerges for CoxFe3-xO4 nanoparticles, which can be tuned by the level of Co doping.

Dynamic wet etching of silicon through isopropanol alcohol evaporation

In this paper, Isopropanol (IPA) availability during the anisotropic etching of silicon in Potassium Hydroxide (KOH) solutions was investigated. Squares of 8 to 40 m were patterned to (100) oriented silicon wafers through DWL (Direct Writing Laser) photolithography. The wet etching process was performed inside an open HDPE (High Density Polyethylene) flask with ultrasonic agitation. IPA volume and evaporation was studied in a dynamic etching process, and subsequent influence on the silicon etching was inspected. For the tested conditions, evaporation rates for water vapor and IPA were determined as approximately 0.0417 mL/min and 0.175 mL/min, respectively. Results demonstrate that IPA availability, and not concentration, plays an important role in the definition of the final structure. Transversal SEM (Scanning Electron Microscopy) analysis demonstrates a correlation between microloading effects (as a consequence of structure spacing) and the angle formed towards the (100) plane.

Síntesis, caracterización y aplicaciones específicas de metalosilicatos cristalinos micro y mesoporosos con incorporación de nanoestructuras. Synthesis, characterization and specific aplications of crystalline micro and mesoporous metallosilicates with nanostructures.

La síntesis de materiales cristalinos micro y mesoporosos con incorporación de micro/nano partículas/clusters de especies formadas con entidades propias interaccionando con las redes, como óxidos de metales, cationes de neutralización, especies metálicas, etc., pueden potencialmente ser utilizados como "materiales hospedaje" en óptica, electrónica, sensores, como materiales magnéticos, en estrategias ambientales de control de la contaminación, catálisis en general y procesos de separación. Se sintetizaran y caracterizaran por diversas técnicas fisicoquímicas, zeolitas microporosas de poro medio (ZSM) y poro grande (Y), y materiales mesoporosos (MCM-41). La aplicación de los mismos se orientara, por una parte, a procesos catalíticos tecnológicamente innovadores relacionados con los siguientes campos: a)catálisis ambiental: transformación de desechos plásticos (polietileno, polipropileno, poliestireno o mezclas de los mismos) a hidrocarburos de mayor valor agregado (gasolinas, gasoil, gases licuados de petróleo, hidrocarburos aromáticos); b)química fina: oxidación parcial de hidrocarburos aromáticos hacia la obtención de commodities, fármacos, etc. Por otra parte, se evaluaran las propiedades magnéticas (ferromagnetismo, paramagnetismo, superparamagnetismo, diamagnetismo) que algunos de estos materiales presentan, en busca de su correlación con sus propiedades catalíticas, cuando sea factible. Se estudiaran las condiciones óptimas de síntesis de los materiales, aplicando técnicas hidrotermicas o sol gel, controlando variables como temperaturas y tiempos de síntesis, pH de geles iniciales-intermedios-finales, tipo de fuentes precursoras, etc. La modificación de las matrices con Co, Cr, Mn, H, o Zn, se realizara mediante diversos tratamientos químicos (intercambio, impregnación) a partir de las sales correspondientes, con el objeto de incorporar elementos activos al estado iónico, metálico, clusters, etc.; y la influencia de distintos tratamientos térmicos (oxidantes, inertes o reductores; atmósferas dinámicas o estáticas; temperaturas). La caracterización estructural de los materiales será por: AA (cuantificación elemental de bulk); XRD (determinacion de presencia de especies oxidos o metalicas de Zn, Co, Cr, o Mn; determinacion de cristalinidad y estructura); BET (determinacion de area superficial); DSC-TG-DTA (determinacion de estabilidad de las matrices sintetizadas); FTIR de piridina (determinacion de tipo-fuerza-cantidad de sitios activos); Raman y UV-reflectancia difusa (determinacion de especies ionicas interacturando o depositadas sobre las matrices); TPR (identificacion de especies reducibles); SEM-EDAX (determinacion de tamaño de particulas de especies activas y de las matrices y cuanfiticacion superficial); Magnetómetros SQUID y de muestra vibrante (medición de magnetización y susceptibilidad magnética a temperatura ambiente con variación de campo externo aplicado, y variación de temperaturas (4 a 300 K) con campo externo fijo). En síntesis, se plantean tres grandes áreas de trabajo: No1)Síntesis y caracterización de materiales micro y mesoporosos nanoestructurados; No2) Evaluación de las propiedades catalíticas; No3) Evaluación de las propiedades magnéticas. Estos lineamientos nos permitirán generar nuevos conocimientos científicos-tecnológicos, formando recursos humanos (dos becarios posdoctorales; un becario doctoral; tres becarios alumnos de investigación; aproximadamente 15 pasantes de grado al año) aptos para emprender tales desafíos. Los conocimientos originados son constantemente trabajados en las actividades docentes de grado y posgrado que los integrantes del proyecto poseen. Finalmente serán transmitidos y puestos a consideración de pares evaluadores en presentaciones a congresos nacionales e internacionales y revistas especializadas.

Growth of semi-polar GaN on high index silicon (11h) substrates by metal organic vapor phase epitaxy

Magdeburg, Univ., Fak. für Naturwiss., Diss., 2014

Development of advanced silicon radiation detectors for high energy physics and medical imaging

The 1st chapter of this work presents the different experiments and collaborations in which I am involved during my PhD studies of Physics. Following those descriptions, the 2nd chapter is dedicated to how the radiation affects the silicon sensors, as well as some experimental measurements carried out at CERN (Geneve, Schwitzerland) and IFIC (Valencia, Spain) laboratories. Besides the previous investigation results, this chapter includes the most recent scientific papers appeared in the latest RD50 (Research & Development #50) Status Report, published in January 2007, as well as some others published this year. The 3rd and 4th are dedicated to the simulation of the electrical behavior of solid state detectors. In chapter 3 are reported the results obtained for the illumination of edgeless detectors irradiated at different fluences, in the framework of the TOSTER Collaboration. The 4th chapter reports about simulation design, simulation and fabrication of a novel 3D detector developed at CNM for ions detection in the future ITER fusion reactor. This chapter will be extended with irradiation simulations and experimental measurements in my PhD Thesis.

Growth and characterization of CoO ultra thin films

In this report we present the growth process of the cobalt oxide system using reactive electron beam deposition. In that technique, a target of metallic cobalt is evaporated and its atoms are in-flight oxidized in an oxygen rich reactive atmosphere before reaching the surface of the substrate. With a trial and error procedure the deposition parameters have been optimized to obtain the correct stoichiometry and crystalline phase. The evaporation conditions to achieve the correct cobalt oxide salt rock structure, when evaporating over amorphous silicon nitride, are: 525 K of substrate temperature, 2.5·10-4 mbar of oxygen partial pressure and 1 Å/s of evaporation rate. Once the parameters were optimized a set of ultra thin film ranging from samples of 1 nm of nominal thickness to 20nm thick and bulk samples were grown. With the aim to characterize the samples and study their microstructure and morphology, X-ray diffraction, transmission electron microscopy, electron diffraction, energy dispersive X-ray spectroscopy and quasi-adiabatic nanocalorimetry techniques are utilised. The final results show a size dependent effect of the antiferromagnetic transition. Its Néel temperature becomes depressed as the size of the grains forming the layer decreases.

Engineering the thermal emission of macroporous silicon

Todos los cuerpos emiten luz espontaneamente al ser calentados. El espectro de radiacion es una funcion de la temperatura y el material. Sin embargo, la mayoria de los materiales irradia, en general, en una banda espectral amplia. Algunas matereiales, por el contrario, son capaces de concentrar la radiacion termica en una banda espectral mucho mas estrecha. Estos materiales se conocen como emisores selectivos y su uso tiene un profundo impacto en la eficiencia de sistemas sistemas tales como iluminacion y conversion de energia termofotovoltaica. De los emisores selectivos se espera que sean capaces de operar a altas temperaturas y que emitan en una banda espectral muy concisa. Uno de los metodos mas prometedores para controlar y disenar el espectro de emision termico es la utilizacion de cristales fotonicos. Los cristales fotonicos son estructuras periodicas artificiales capaces de controlar y confinar la luz de formas sin precedentes. Sin embargo, la produccion de dichas estructuras con grandes superficies y capaces de soportar altas temperaturas sigue siendo una dificil tarea. Este trabajo esta dedicada al estudio de las propiedades de emision termica de estructuras 3D de silicio macroporoso en el rango espectral mid-IR (2-30 m). En particular, este trabajo se enfoca en reducir la elevada emisividad del silicio cristalino. Las muestras estudiadas en este trabajo tienen una periodicidad de 4 m, lo que limitan los resultados obtenidos a la banda del infrarrojo medio, aunque estructuras mucho mas pequenas son tecnologicamente realizables con el metodo de fabricacion utilizado. Hemos demostrado que el silicio macroporoso 3D puede inhibir completamente la emision termica en su superficie. Mas aun, esta banda se puede ajustar en un amplio margen mediante pequenos cambios durante la formacion de los macroporos. Tambien hemos demostrado que tanto el ancho como la frecuencia de la banda de inhibicion se puede doblar mediante la aplicacion de tecnicas de postprocesado adecuadas. Finalmente hemos mostrado que es posible crear bandas de baja emisividad arbitrariamente anchas mediante estructuras macroporosas aperiodicas.

Calorimetry of dehydrogenation and dangling-bond recombination in several hydrogenated amorphous silicon materials

Differential scanning calorimetry (DSC) was used to study the dehydrogenation processes that take place in three hydrogenated amorphous silicon materials: nanoparticles, polymorphous silicon, and conventional device-quality amorphous silicon. Comparison of DSC thermograms with evolved gas analysis (EGA) has led to the identification of four dehydrogenation processes arising from polymeric chains (A), SiH groups at the surfaces of internal voids (A'), SiH groups at interfaces (B), and in the bulk (C). All of them are slightly exothermic with enthalpies below 50 meV/H atoms , indicating that, after dissociation of any SiH group, most dangling bonds recombine. The kinetics of the three low-temperature processes [with DSC peak temperatures at around 320 (A),360 (A'), and 430°C (B)] exhibit a kinetic-compensation effect characterized by a linea relationship between the activation entropy and enthalpy, which constitutes their signature. Their Si-H bond-dissociation energies have been determined to be E (Si-H)0=3.14 (A), 3.19 (A'), and 3.28 eV (B). In these cases it was possible to extract the formation energy E(DB) of the dangling bonds that recombine after Si-H bond breaking [0.97 (A), 1.05 (A'), and 1.12 (B)]. It is concluded that E(DB) increases with the degree of confinement and that E(DB)>1.10 eV for the isolated dangling bond in the bulk. After Si-H dissociation and for the low-temperature processes, hydrogen is transported in molecular form and a low relaxation of the silicon network is promoted. This is in contrast to the high-temperature process for which the diffusion of H in atomic form induces a substantial lattice relaxation that, for the conventional amorphous sample, releases energy of around 600 meV per H atom. It is argued that the density of sites in the Si network for H trapping diminishes during atomic diffusion

Oxidation of silicon: further tests for the interfacial silicon emission model

The classical description of Si oxidation given by Deal and Grove has well-known limitations for thin oxides (below 200 Ã). Among the large number of alternative models published so far, the interfacial emission model has shown the greatest ability to fit the experimental oxidation curves. It relies on the assumption that during oxidation Si interstitials are emitted to the oxide to release strain and that the accumulation of these interstitials near the interface reduces the reaction rate there. The resulting set of differential equations makes it possible to model diverse oxidation experiments. In this paper, we have compared its predictions with two sets of experiments: (1) the pressure dependence for subatmospheric oxygen pressure and (2) the enhancement of the oxidation rate after annealing in inert atmosphere. The result is not satisfactory and raises serious doubts about the model’s correctness

Enhanced sensitivity detection of protein immobilization by fluorescent interference on oxidized silicon.

We present a silicon chip-based approach for the enhanced sensitivity detection of surface-immobilized fluorescent molecules. Green fluorescent protein (GFP) is bound to the silicon substrate by a disuccinimidyl terephtalate-aminosilane immobilization procedure. The immobilized organic layers are characterized by surface analysis techniques, like ellipsometry, atomic force microscopy (AFM) and X-ray induced photoelectron spectroscopy. We obtain a 20-fold enhancement of the fluorescent signal, using constructive interference effects in a fused silica dielectric layer, deposited before immobilization onto the silicon. Our method opens perspectives to increase by an order of magnitude the fluorescent response of surface immobilized DNA- or protein-based layers for a variety of biosensor applications.

Effect of silicon and acibenzolar-s-methyl on colored cotton plants infested or not with Aphis gossypii Glover (Hemiptera, Aphididae)

Effect of silicon and acibenzolar-s-methyl on colored cotton plants infested or not with Aphis gossypii Glover (Hemiptera, Aphididae). The aphid Aphis gossypii is an insect pest that causes damage mainly at the beginning of the cotton plant development. The effect of resistance inductors silicon and acibenzolar-s-methyl (ASM) on the development of colored cotton plants were researched in the presence and absence of A. gossypii. Three colored cotton cultivars were sown in pots and individually infested with 25 apterous aphids, 13 days after the application of the inductors. Fifteen days after plant emergence, the silicon was applied at a dosage equivalent to 3 t/ha and acibenzolar-s-methyl in 0.2% solution of the product BION 500®. After 21 days of infestation the following parameters were evaluated: plant height, stem diameter, dry matter of aerial part and root, and total number of aphids replaced. It was verified that the plant height was reduced in the presence of aphids and all variables were negatively affected by the application of ASM. However, silicon did not affect plant development.