Growth of semi-polar GaN on high index silicon (11h) substrates by metal organic vapor phase epitaxy
| Cobertura |
530 530.4175 530.4175 |
|---|---|
| Data(s) |
2014
|
| Resumo |
Magdeburg, Univ., Fak. für Naturwiss., Diss., 2014 von Roghaiyeh Ravash |
| Formato |
Online Ressource (PDF-Datei) |
| Identificador |
urn:nbn:de:gbv:ma9:1-4514 http://nbn-resolving.de/urn:nbn:de:gbv:ma9:1-4514 system:781225558 |
| Idioma(s) |
eng |
| Publicador |
Universitätsbibl. |
| Tipo |
text thesis |
