A voltage-controlled tunable two-color infrared photodetector using GaAs/AlAs/GaAlAs and GaAs/GaAlAs stacked multiquantum wells

A voltage-controlled tunable two-color infrared detector with photovoltaic (PV) and photoconductive (PC) dual-mode operation at 3-5 mu m and 8-14 mu m using GaAs/AlAs/AlGaAs double barrier quantum wells (DBQWs) and bound-to-continuum GaAs/AlGaAs quantum wells is demonstrated. The photoresponse peak of the photovoltaic GaAs/AlAs/GaAlAs DBQWs is at 5.3 mu m, and that of the photoconductive GaAs/GaAlAs quantum wells is at 9.0 mu m. When the two-color detector is under a zero bias, the spectral response at 5.3 mu m is close to saturate and the peak detectivity at 80 K can reach 1.0X10(11) cmHz(1/2)/W, while the spectral photoresponsivity at 9.0 mu m is absolutely zero completely. When the external voltage of the two-color detector is changed to 2.0 V, the spectral photoresponsivity at 5.3 mu m becomes zero while the spectral photoresponsivity at 9.0 mu m increases comparable to that at 5.3 mu m under zero bias, and the peak detectivity (9.0 mu m) at 80 K can reach 1.5X10(10) cmHz(1/2)/W. Strictly speaking, this is a real bias-controlled tunable two-color infrared photodetector. We have proposed a model based on the PV and PC dual-mode operation of stacked two-color QWIPs and the effects of tunneling resonance with narrow energy width of photoexcited electrons in DBQWs, which can explain qualitatively the voltage-controlled tunable behavior of the photoresponse of the two-color infrared photodetector. (C) 1996 American Institute of Physics.

PHOTOLUMINESCENCE STUDIES ON VERY HIGH-DENSITY 2-DIMENSIONAL ELECTRON GASES IN PSEUDOMORPHIC MODULATION-DOPED QUANTUM-WELLS

We present photoluminescence studies on highly dense two-dimensional electron gases in selectively Si delta-doped GaAs/In0.18Ga0.82As/Al0.25Ga0.75As quantum wells (N(s) = 4.24 x 10(12) cm-2). Five well-resolved photoluminescence lines centered at 1.4194, 1.4506, 1.4609, 1.4695 and 1.4808 eV were observed, which are attributed to the subband excition emission. The subband separations clearly exhibit the feature of a typical quantum well with triangle and square potential. These very intensive and sharp luminescence peaks with linewidths of 2.2 to 3.5 meV indicate the high quality of the structures. Their dependence on the excitation intensity and temperatures are also discussed.

Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector

A SiGe/Si multi-quantum wells resonant-cavity-enhanced(RCE) detector with high reflectivity bottom mirror is fabricated by a new method.The bottom mirror is deposited in the hole,which is etched from the backside of the sample by ethylenediamine-pyrocatechol-water(EPW) solution with the buried SiO2 layer in SOI substrate as the etching-stop layer.Reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2～1.5μm.The peak responsivity of the RCE detector at 1.344μm is 1.2mA/W and the full width at half maximum is 12nm.Compared with the conventional p-i-n photodetector,the responsivity of RCE detector is enhanced 8 times.

Exciton Localization and Delocalization in GaNAs/GaAs Quantum Wells

We have studied exciton localization and delocalization effect in GaNAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy (MBE) using photoluminescence (PL) and timeresolved PL measurements. Studied results suggest that, at low temperature and under a conventional CW excitation, measured PL spectra were dominated by localized exciton (LE) emission caused by potential fluctuations in GaNAs layer. However, under short pulse laser excitation, it is different. An extra high-energy PL peak comes out from GaNAs/GaAs QWs and dominates the PL spectra under high excitation and/or at high temperature. By investigation, we have attributed the new PL peak to the recombination of delocalized excitons in QWs. This recombination process competes with the localized exciton emission, which, we believe, constitutes the "S-shaped" temperature-dependent emission shift often reported in ternary nitrides of InGaN and AlGaN in the literature.

The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells

Photoluminescence (PL) spectra of GaInNAs/GaAs multiple quantum wells and GaInNAs epilayers grown on GaAs substrate show an apparent "S-shape" temperature-dependence of the of dominant luminescence peak. At low temperature and weak excitation conditions, a PL peak related to nitrogen cluster-induced bound states can be well resolved in the PL spectra. It displays a remarkable red shift of up to 60 meV and is thermally quenched below 100 K with increasing temperature, being attributed to N-cluster induced bound states. The indium incorporation exhibits significant effect on the cluster formation. The rapid thermal annealing treatment at 750 C can essentially remove the bound states-induced peak.

Optical study on the coupled GaAsSb/GaAs double quantum wells

The structural and optical properties of GaAsSb/GaAs-based quantum wells (QWs) are investigated. The interface quality of GaAsSb/GaAs/GaAsP coupled double (CD) QW structures is improved due to the strain compensation of epitaxial layers. The CD QWs possess a W-shape of energy band structure, and the optical properties display the features characteristic of a type-IQW when the GaAsSb layer thickness is thin enough.

1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors

A GaInNAs/GaAs multiple quantum well (MQW) resonant-cavity enhanced (RCE) photodetector operating at 1.3 mum with the full-width at half-maximum of 5.5 nm was demonstrated. The GaInNAs RCE photodetector was grown by molecular-beam epitaxy using an ion-removed dc-plasma cell as nitrogen source. GaInNAs/GaAs MQW shows a strong exciton peak at room temperature that is very beneficial for applications in long-wavelength absorption devices. For a 100-mum diameter RCE photodetector, the dark current is 20 and 32 pA at biases of 0 and 6 V, respectively, and the breakdown voltage is -18 V. The measured 3-dB bandwidth is 308 MHz. The reasons resulting in the poor high speed property were analyzed. The tunable wavelength of 18 nm with the angle of incident light was observed.

Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells

Excitation-power dependence of hydrostatic pressure coefficients (dE/dP) of InxGa1-xN/InyGa1-yN multiple quantum wells is reported. When the excitation power increases from 1.0 to 33 mW, dE/dP increases from 26.9 to 33.8 meV/GPa, which is an increase by 25%. A saturation behavior of dE/dP with the excitation power is observed. The increment of dE/dP with increasing carrier density is explained by an reduction of the internal piezoelectric field due to an efficient screening effect of the free carriers on the field.

Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy

The optimum growth condition of GaInNAs/GaAs quantum wells (QWs) by plasma-assisted molecular beam epitaxy was investigated. High-resolution X-ray diffraction and photoluminescence (PL) measurements showed that ion damage drastically degraded the quality of GaNAs and GaInNAs QWs and that ion removal magnets can effectively remove the excess ion damage. Remarkable improvement of PL intensity and obvious appearance of pendellosung fringes were observed by removing the N ions produced in the plasma cell. When the growth rate increased from 0.73 to 1.2 ML/s, the optimum growth temperature was raised from 460 degreesC to 480 degreesC and PL peak intensity increased two times. Although the N composition decreased with increasing growth rate, degradation of optical properties of GaInNAs QWs was observed when the growth rate was over 0.92 ML/s. Due to low-temperature growth of GaInNAs QWs, a distinctive reflection high-energy electron diffraction pattern was observed only when the GaAs barrier was grown under lower As-4 pressure. The samples with GaAs barriers grown under lower As-4 pressure (V/III ratio about 24) exhibited seven times increase in PL peak intensity compared with those grown under higher As-4 pressure (V/III ratio about 50). (C) 2001 Elsevier Science B,V. All rights reserved.

Zasada racji dostatecznej w kontekście semantycznej kontrowersji realizm–antyrealizm

"Principle of sufficient reason in the context of the realism-antirealism semantic controversy". The topic of this article is the cognitive and semantic status of Michael Dummett’s principle C. According to the principle, if a statement is true, there must be something in virtue of which it is true. The author suggests the interpretation of principle C in terms of the sufficient reason principle as a contemporary, weaker and semantic counterpart of the classical version of the principle. Considerations include such problems as: the distinction between the reason-consequence relationship and cause-effect relationship; the reductionism and justificationism in the context of the realism-antirealism semantic controversy; the reversibility of reason-consequence relationship and the question of a search for ultimate reasons. The author also distinguishes three forms of the sufficient reason principle: metaphysical, ontological and propositional.

Hindrances to the work of the church in the world : a series of sermons / by the Lord Bishop of Bath and Wells ... [et al.]

http://www.archive.org/details/hindrancestothew00unknuoft

Welfare Effort and Poverty from the Monetary and Capabilities Approach: A Cross-Country Analysis in Latin American and the Caribbean (1990-2010)

There is abundant empirical evidence on the negative relationship between welfare effort and poverty. However, poverty indicators traditionally used have been representative of the monetary approach, excluding its multidimensional reality from the analysis. Using three regression techniques for the period 1990-2010 and controlling for demographic and cyclical factors, this paper examines the relationship between social spending per capita —as the indicator of welfare effort— and poverty in up to 21 countries of the region. The proportion of the population with an income below its national basic basket of goods and services (PM1) and the proportion of population with an income below 50% of the median income per capita (PM2) were the two poverty indicators considered from the monetarist approach to measure poverty. From the capability approach the proportion of the population with food inadequacy (PC1) and the proportion of the population without access to improved water sources or sanitation facilities (PC2) were used. The fi ndings confi rm that social spending is actually useful to explain changes in poverty (PM1, PC1 and PC2), as there is a high negative and signifi cant correlation between the variables before and after controlling for demographic and cyclical factors. In two regression techniques, social spending per capita did not show a negative relationship with the PM2. Countries with greater welfare effort for the period 1990-2010 were not necessarily those with the lowest level of poverty. Ultimately social spending per capita was more useful to explain changes in poverty from the capability approach.

The "Art" of Criticism: Rubén Darío and his Unknown Chronicles of the 1895 Salon for "La Prensa"

With the impetus that has led recent studies on Latin American Modernism to a reevaluation of the sense of cultural fluxes from the modernity capitals to its peripheries –discarding categories such as “influence”, “exotism” and “ivory tower”, stereotypes that have clouded critical understanding of this aesthetics for decades- the present study intends to investigate a persistent practice of the main writers of the movement. This practice is modernist pictorial criticism, a genre that will be approached through the analysis of an unknown corpus: the seven chronicles Rubén Darío published in the journal La Prensa on occasion of the third art exposition of the Ateneo de Buenos Aires. Our hypothesis is that the rare creators of images portrayed by Darío by the end of 1895 work as a visual counterpoint of the eccentric writers’ biographical sketches that a year later will be part of the fundamental volume Los raros (1896). In this early “salon”, which we reproduce in its entirety, accompanied by explanatory notes, the leader of Modernism rehearses and consolidates his transcultural work with the universal tradition –now applied to the Salons (1845-1860) by Charles Baudelaire and to the monumental project by John Ruskin in Modern painters (1843-1860)- to legitimate, from another subgenre of Modernist criticism, a new figure of the critic, in dissent with the Enlightenment model of the writer.