Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z

The nonradiative recombination effect on the photoluminescence (PL) decay dynamics in GaInNAs/GaAs quantum wells is studied by photoluminescence and time-resolved photoluminescence under various excitation intensities and temperatures. It is found that the PL decay dynamics strongly depends on the excitation intensity. In particular, under the moderate excitation levels the PL decay curves exhibit unusual non-exponential behavior and show a convex shape. By introducing a new concept of the effective concentration of nonradiative recombination centers into a rate equation, the observed results are well simulated. In the cw PL measurement, a rapid PL quenching is observed even at very low temperature and is of the excitation power dependence. These results further demonstrate that the non-radiative recombination process plays a very important role on the optical properties of GaInNAs/GaAs quantum wells.

A novel photonic crystal vertical cavity surface emitting laser based on coherent coupling

We demonstrate a novel oxide confined GaAs-based photonic crystal vertical cavity surface emitting laser (PC-VCSEL) operating at a wavelength of 850 nm based on coherent coupling. A ring-shaped light-emitting aperture is added to the conventional PC-VCSEL, and coherent coupling is achieved between the central defect aperture and the ring-shaped light-emitting aperture. Measurements show that under the continuous-wave (CW) injected current of 20 mA, a high power of 2 mW is obtained, and the side mode suppression ratio (SMSR) is larger than 20 dB. The average divergence angle is 4.2 degrees at the current level of 20 mA. Compared with the results ever reported, the divergence angle is reduced.

开放对等环境下的安全协作关键技术研究

本文以动态开放的对等协作应用环境为背景，围绕实现安全协作存在的公平性、真实性和策略实施一致性安全需求，针对其中的激励机制、声誉系统、索引系统和访问控制授权管理等关键安全机制进行了深入研究，取得了如下研究成果： 第一， 针对P2P文件共享应用环境，提出一种改进的结环交换激励机制，在降低整体开销的同时，通过改变额外开销的分配关系抑制由于激励机制本身漏洞引发的自私行为和恶意攻击。 第二， 分析共享文件应用中服务真实性对声誉和索引数据的真实性的依赖关系，提出刻画服务真实性安全需求的P2P-CW完整性策略模型，用于指导P2P声誉和索引系统中相关安全机制的设计与分析。 第三， 提出在声誉管理系统层次通过保证声誉数据与计算过程的完整性，提高P2P声誉真实性；利用可信计算和虚拟机技术，设计分布式的安全声誉管理系统——可信声誉管理服务架构TRMS，提供更为可信、准确和可用的声誉数值，并兼顾系统整体的低开销、高扩展和强健壮等需求。 第四， 针对分布式结构化索引系统中的索引数据真实性保护问题，提出“安全索引验证机制”的概念；并设计基于数字签名和Bloom Filter的索引验证机制Prosiv，有效遏制索引污染攻击的同时，最小化索引系统的额外开销。 第五， 分析无仲裁者互操作环境下的远程约束实施问题，提出“约束安全互操作”的概念；提出并改进基于冲突闭包的约束冲突检测算法，由只具备局部信息的成员域协作实现职责分离约束的全局一致实施。

Effects of metal catalysts on CO2 gasification reactivity of biomass char

The effects of five metal catalysts (K, Na, Ca, Mg, and Fe) on CO2 gasification reactivity of fir char were studied using thermal gravimetric analysis. The degree of carbonization, crystal structure and morphology of char samples was characterized by X-ray diffractometry (XRD) and scanning electron microscopy (SEM). The CO2 gasification reactivity of fir char was improved through the addition of metal catalysts, in the order K>Na>Ca>Fe>Mg. XRD analysis indicated that Na and Ca improved the formation of crystal structure, and that Mg enhanced the degree of carbon structure ordering. SEM analysis showed that spotted activation centers were distributed on the surface of char samples impregnated with catalysts. Moreover, a loose flake structure was observed on the surface of both K-char and Na-char. Finally, the kinetic parameters of CO2 gasification of char samples were calculated mathematically.

The role of CeO2-ZrO2 as support in the ZnO-ZnCr2O4 catalysts for autothermal reforming of methanol

Autothermal reforming of methanol for hydrogen production was investigated over ZnO-ZnCr2O4 supported on a series of metal oxides (Al2O3, CeO2, ZrO2 and CeO2-ZrO2)CeO2-ZrO2 mixed oxides with Ce /Zr molar ratio of 4/1 was found to be the optimal support which showed significant effect on the catalytic activity and selectivity. The ZnO-ZnCr2O4/CeO2-ZrO2 and ZnO-ZnCr2O4 catalysts were characterized by XRD, TEM, H-2-TPR and XPS. The results show that CeO2-ZrO2 mixed oxides have significant effect on the catalytic performance and the supported catalyst shows more uniform temperature distribution in the catalyst bed which was mainly due to its reasonable redox properties.

Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours

We report our recent progress of investigations on InGaN-based blue-violet laser diodes (LDs). The room-temperature (RT) cw operation lifetime of LDs has extended to longer than 15.6 h. The LD structure was grown on a c-plane free-standing (FS) GaN substrate by metal organic chemical vapor deposition (MOCVD). The typical threshold current and voltage of LD under RT cw operation are 78 mA and 6.8 V, respectively. The experimental analysis of degradation of LD performances suggests that after aging treatment, the increase of series resistance and threshold current can be mainly attributed to the deterioration of p-type ohmic contact and the decrease of internal quantum efficiency of multiple quantum well (MQW), respectively.

PHOTOVOLTAIC EFFECT AND ITS POLARITY IN SI DOPING SUPERLATTICES

We have studied the photovoltaic effects in Si doping superlattices (nipi) under different excitation conditions with and without additional cw optical biasing using a He-Ne laser. On the basis of the photovoltaic theory of carrier spatial separation in superlattices, we propose the concept of spatial fixity of the photovoltage polarity in type-II superlattices and examine the experimental results. The photovoltaic effect in Si nipi is found mainly from the direct transitions related with shallow impurities in real space, not the electron-hole band-to-band process as in GaAs nipi.

EXTREMELY LOW THRESHOLD CURRENT, BURIED-HETEROSTRUCTURE STRAINED INGAAS GAAS MULTIQUANTUM WELL LASERS

A very low CW threshold current of 1.65 mA at room temperature was obtained for an uncoated buried-heterostructure strained layer multiquantum well InGaAs-GaAs laser fabricated using hybrid molecular beam epitaxy and liquid phase epitaxy crystal growth technique. External differential quantum efficiency as high as 44.6% (0.53 mW/mA) and output power of more than 30 mW per facet were achieved in the same laser.