Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z
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2006
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| Resumo |
The nonradiative recombination effect on the photoluminescence (PL) decay dynamics in GaInNAs/GaAs quantum wells is studied by photoluminescence and time-resolved photoluminescence under various excitation intensities and temperatures. It is found that the PL decay dynamics strongly depends on the excitation intensity. In particular, under the moderate excitation levels the PL decay curves exhibit unusual non-exponential behavior and show a convex shape. By introducing a new concept of the effective concentration of nonradiative recombination centers into a rate equation, the observed results are well simulated. In the cw PL measurement, a rapid PL quenching is observed even at very low temperature and is of the excitation power dependence. These results further demonstrate that the non-radiative recombination process plays a very important role on the optical properties of GaInNAs/GaAs quantum wells. The nonradiative recombination effect on the photoluminescence (PL) decay dynamics in GaInNAs/GaAs quantum wells is studied by photoluminescence and time-resolved photoluminescence under various excitation intensities and temperatures. It is found that the PL decay dynamics strongly depends on the excitation intensity. In particular, under the moderate excitation levels the PL decay curves exhibit unusual non-exponential behavior and show a convex shape. By introducing a new concept of the effective concentration of nonradiative recombination centers into a rate equation, the observed results are well simulated. In the cw PL measurement, a rapid PL quenching is observed even at very low temperature and is of the excitation power dependence. These results further demonstrate that the non-radiative recombination process plays a very important role on the optical properties of GaInNAs/GaAs quantum wells. zhangdi于2010-03-29批量导入 Made available in DSpace on 2010-03-29T06:06:21Z (GMT). No. of bitstreams: 1 2362.pdf: 312619 bytes, checksum: 7f1c87b9dd04055983e6c6c5592299d5 (MD5) Previous issue date: 2006 Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
SPIE-INT SOC OPTICAL ENGINEERING 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
| Fonte |
Sun, Z (Sun, Z.); Xu, ZY (Xu, Z. Y.); Yang, XD (Yang, X. D.); Sun, BQ (Sun, B. Q.); Ji, Y (Ji, Y.); Zhang, SY (Zhang, S. Y.); Ni, HQ (Ni, H. Q.); Niu, ZC (Niu, Z. C.) .Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z .见：SPIE-INT SOC OPTICAL ENGINEERING .Ultrafast Phenomena in Semiconductors and Nanostructure Materials X丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE) ,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2006,6118: Z1180-Z1180 |
| Palavras-Chave | #半导体物理 #GaInNAs/GaAs quantum wells #optical properties #nonradiative recombination effect #time-resolved photoluminescence #PL decay dynamics #PL thermal quenching #MOLECULAR-BEAM EPITAXY #GAASN ALLOYS #EXCITATION |
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会议论文 |
