Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours
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2010
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| Resumo |
We report our recent progress of investigations on InGaN-based blue-violet laser diodes (LDs). The room-temperature (RT) cw operation lifetime of LDs has extended to longer than 15.6 h. The LD structure was grown on a c-plane free-standing (FS) GaN substrate by metal organic chemical vapor deposition (MOCVD). The typical threshold current and voltage of LD under RT cw operation are 78 mA and 6.8 V, respectively. The experimental analysis of degradation of LD performances suggests that after aging treatment, the increase of series resistance and threshold current can be mainly attributed to the deterioration of p-type ohmic contact and the decrease of internal quantum efficiency of multiple quantum well (MQW), respectively. Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-12-05T03:51:58Z No. of bitstreams: 1 Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours.pdf: 822102 bytes, checksum: 7c8c6ba54b30d1b567fb0b5e5a7aa3c4 (MD5) Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-12-05T03:59:30Z (GMT) No. of bitstreams: 1 Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours.pdf: 822102 bytes, checksum: 7c8c6ba54b30d1b567fb0b5e5a7aa3c4 (MD5) Made available in DSpace on 2010-12-05T03:59:30Z (GMT). No. of bitstreams: 1 Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours.pdf: 822102 bytes, checksum: 7c8c6ba54b30d1b567fb0b5e5a7aa3c4 (MD5) Previous issue date: 2010 Supported by the National Natural Science Foundation of China under Grant Nos 60976045, 60506001, 60776047 and 60836003, and the National Basic Research Program of China under Grant No 2007CB936700. 国内 Supported by the National Natural Science Foundation of China under Grant Nos 60976045, 60506001, 60776047 and 60836003, and the National Basic Research Program of China under Grant No 2007CB936700. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zeng C (Zeng Chang), Zhang SM (Zhang Shu-Ming), Ji L (Ji Lian), Wang HB (Wang Huai-Bing), Zhao DG (Zhao De-Gang), Zhu JJ (Zhu Jian-Jun), Liu ZS (Liu Zong-Shun), Jiang DS (Jiang De-Sheng), Cao Q (Cao Qing), Chong M (Chong Ming), Duan LH (Duan Li-Hong), Wang H (Wang Hai), Shi YS (Shi Yong-Sheng), Liu SY (Liu Su-Ying), Yang H (Yang Hui), Chen LH (Chen Liang-Hui).Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours.CHINESE PHYSICS LETTERS,2010,27(11):Art. No. 114215 |
| Palavras-Chave | #光电子学 |
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期刊论文 |
