EXTREMELY LOW THRESHOLD CURRENT, BURIED-HETEROSTRUCTURE STRAINED INGAAS GAAS MULTIQUANTUM WELL LASERS

A very low CW threshold current of 1.65 mA at room temperature was obtained for an uncoated buried-heterostructure strained layer multiquantum well InGaAs-GaAs laser fabricated using hybrid molecular beam epitaxy and liquid phase epitaxy crystal growth technique. External differential quantum efficiency as high as 44.6% (0.53 mW/mA) and output power of more than 30 mW per facet were achieved in the same laser.

A very low CW threshold current of 1.65 mA at room temperature was obtained for an uncoated buried-heterostructure strained layer multiquantum well InGaAs-GaAs laser fabricated using hybrid molecular beam epitaxy and liquid phase epitaxy crystal growth technique. External differential quantum efficiency as high as 44.6% (0.53 mW/mA) and output power of more than 30 mW per facet were achieved in the same laser.

于2010-11-15批量导入

Made available in DSpace on 2010-11-15T00:55:33Z (GMT). No. of bitstreams: 1 6586.pdf: 338650 bytes, checksum: 377025daf24993d1fe5444f51967162b (MD5) Previous issue date: 1992