Fabrication and characterisation of high resistivity SOI substrates for monolithic high energy physics detectors

Silicon on Insulator (SOI) substrates offer a promising platform for monolithic high energy physics detectors with integrated read-out electronics and pixel diodes. This paper describes the fabrication and characterisation of specially-configured SOI substrates using improved bonded wafer ion split and grind/polish technologies. The crucial interface between the high resistivity handle silicon and the SOI buried oxide has been characterised using both pixel diodes and circular geometry MOS transistors. Pixel diode breakdown voltages were typically greater than 100V and average leakage current densities at 70 V were only 55 nA/ sq cm. MOS transistors subjected to 24 GeV proton irradiation showed an increased SOI buried oxide trapped charge of only 3.45x1011cn-2 for a dose of 2.7Mrad

Improved Thermal Performance of SOI Using Compound Buried Layer

The buried oxide (BOX) layer in silicon on insulator (SOI) was replaced by a compound buried layer (CBL) containing layers of SiO2, polycrystalline silicon (polysilicon), and SiO2. The undoped polysilicon in the CBL acted as a dielectric with a higher thermal conductivity than SiO2. CBL provides a reduced thermal resistance with the same equivalent oxide thickness as a standard SiO2 buried layer. Thermal resistance was further reduced by lateral heat flow through the polysilicon. Reduction in thermal resistance by up to 68% was observed, dependent on polysilicon thickness. CBL SOI substrates were designed and manufactured to achieve a 40% reduction in thermal resistance compared with an 1.0-μm SiO2 BOX. Power bipolar transistors with an active silicon layer thickness of 13.5 μm manufactured on CBL SOI substrates showed a 5%-17% reduction in thermal resistance compared with the standard SOI. This reduction was dependent on transistor layout geometry. Between 65% and 90% of the heat flow from these power transistors is laterally through the thick active silicon layer. Analysis confirmed that CBL SOI provided a 40% reduction in the vertical path thermal resistance. Devices employing thinner active silicon layers will achieve the greater benefit from reduction in vertical path thermal resistance offered by CBL SOI.

Intervention musicale et concept de soi chez les jeunes de la rue

Les jeunes de la rue sont reconnus comme étant fragile [i.e. fragiles] dans leur identité qui les entraînent plus souvent qu'autrement à délaisser le monde de l'éducation et par la suite celui du travail. L'adaptation à la vie scolaire et professionnelle des jeunes de la rue passe entre autres par le développement d'un sentiment identitaire. Notre étude tente de comprendre comment contribuer au développement du concept de soi des jeunes de la rue par les arts. Pour y arriver, un cadre conceptuel double est utilisé, soit le modèle du concept de soi de l'Écuyer (1990) concernant le sentiment identitaire et l'art comme moyen d'intervention à partir des écrits de Vygotsky (1971). L'objectif général est de décrire la façon dont l'intervention musicale dans le projet Artifice agit sur le concept de soi, du point de vue des jeunes et de l'équipe d'intervention.

Le Théâtre chez soi. Galerie dramatique

1856/04/20 (N9).

Le Théâtre chez soi. Galerie dramatique

1856/03/01 (N4).

Le Théâtre chez soi. Galerie dramatique

1856/03/20 (N6).

Le Théâtre chez soi. Galerie dramatique

1856/02/10 (N2).

Le Théâtre chez soi. Galerie dramatique

1856/05/01 (N10).

Le Théâtre chez soi. Galerie dramatique

Etat de collection : Jusqu'à : mai 1856 [I, n° 12]