Development of a Monolithic Active Pixel Sensor using SOI Technology with a Thick Device Layer

Autoria(s): Armstrong, Mervyn; Gamble, Harold; Ruddell, Fred; Marczewski, J.; Grabiec, P.; Kucharski, K.; Tomaszewski, D.; Kucewicz, W.; Kusiak, T.; Sapor, M.; Loster, B.W.; Majewski, S.
Data(s)

01/02/2010
Identificador

http://pure.qub.ac.uk/portal/en/publications/development-of-a-monolithic-active-pixel-sensor-using-soi-technology-with-a-thick-device-layer(a71143de-36cf-46e0-a657-c20522427271).html
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Armstrong , M , Gamble , H , Ruddell , F , Marczewski , J , Grabiec , P , Kucharski , K , Tomaszewski , D , Kucewicz , W , Kusiak , T , Sapor , M , Loster , B W & Majewski , S 2010 , ' Development of a Monolithic Active Pixel Sensor using SOI Technology with a Thick Device Layer ' IEEE Transactions on Nuclear Science , vol 57 , no. 1 PART 2 , 5410008 , pp. 381-386 .
Palavras-Chave #/dk/atira/pure/subjectarea/asjc/2200/2208 #Electrical and Electronic Engineering #/dk/atira/pure/subjectarea/asjc/2100/2104 #Nuclear Energy and Engineering #/dk/atira/pure/subjectarea/asjc/3100/3106 #Nuclear and High Energy Physics
Tipo

article
Acesso ao item digital