Development of Monolithic Active Pixel Sensor in SOI Technology fabricated on the wafer with thick device layer

Autoria(s): Armstrong, Mervyn; Kucewicz, W.; Grabiec, P.; Kucharski, K.; Marczewski, J.; Niemec, H.; Sapor, M.; Tomaszewski, D.; Ruddell, Fred
Data(s)

01/10/2008
Identificador

http://pure.qub.ac.uk/portal/en/publications/development-of-monolithic-active-pixel-sensor-in-soi-technology-fabricated-on-the-wafer-with-thick-device-layer(264fe9bc-959e-4971-9a2c-c0061f83f791).html
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Armstrong , M , Kucewicz , W , Grabiec , P , Kucharski , K , Marczewski , J , Niemec , H , Sapor , M , Tomaszewski , D & Ruddell , F 2008 , ' Development of Monolithic Active Pixel Sensor in SOI Technology fabricated on the wafer with thick device layer ' Paper presented at IEEE Nuclear Science Symposium Conference , Dresden , Germany , 01/10/2008 - 01/10/2008 , pp. 1123-1125 .
Tipo

conferenceObject
Acesso ao item digital