Laser conditioning and multi-shot laser damage accumulation effects of HfO2/SiO2 antireflective coatings

Laser conditioning effects of the HfO2/SiO2 antireflective (AR) coatings at 1064 nm and the accumulation effects of multishot laser radiation were investigated. The HfO2/SiO2 AR coatings were prepared by E-beam evaporation (EBE). The singleshot and multi-shot laser induced damage threshold was detected following ISO standard 11254-1.2, and the laser conditioning was conducted by three-step raster scanning method. It was found that the single-shot LIDT and multi-shot LIDT was almost the same. The damage mostly > 80% occurred in the first shot under multi-shot laser radiation, and after that the damage occurring probability plummeted to < 5%. There was no obvious enhancement of the laser damage resistance for both the single-shot and multi-shot laser radiation of the AR coatings after laser conditioning. A Nomarski microscope was employed to map the damage morphology, and it found that the damage behavior is defect-initiated for both unconditioned and conditioned samples. © 2004 Elsevier B.V. All rights reserved.

Study of thermal behaviors in CO2 laser irradiated glass

To understand mechanisms underlying laser-induced damage of BK7 and fused silica, we calculate the temperature field of the substrates with CO2 laser irradiating at a given laser power and beam radius. We find that the two glasses show different thermal behaviors. A model is developed for estimating the time t to heat the surface of the substrates up to a particular temperature T with cw CO2 laser irradiation. We calculate theoretically the duration t that the samples are irradiated, from the beginning to visual catastrophic damage, with the assumption of damage threshold determined by the critical temperature. The duration t that the samples are irradiated, from the beginning to visual catastrophic damage, is investigated experimentally as well. Here we take the melting point or softening point as the critical temperature, given the thermomechanical coupling properties, which is enough to cause damage for BK7. Damage features are characterized by the sound of visual cracks. Finally, we calculate stresses induced by laser heating. The analysis of stress indicates that the damage of BK7 is due to the stresses induced by laser heating. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Effects of CO2 laser conditioning of the antireflection Y2O3/SiO2 coatings at 351 nm

Y2O3/SiO2 coatings were deposited on fused silica by electron beam evaporation. A continuous wave CO2 laser was used to condition parts of the prepared samples at different scanning speeds in the air. LAMBDA 900 spectrometer was used to investigate the changes of the transmittance and residual reflection spectrum. A Nomarski microscope under dark field was used to examine the changes of the micro defect density. The changes of the surface roughness and the microstructure of the film before and after conditioning were investigated by AFM and X-ray diffraction, respectively. We found that laser-induced damage threshold (LIDT) of the films conditioning at 30 mm/s scanning speed was increased by more than a factor of 3 over the thresholds of the as-deposited films. The conditioning effect was correlated with an irradiation-induced decrease of the defect density and absorption of the films. (c) 2005 Elsevier B.V. All rights reserved.

Laser conditioning of ZrO2 : Y2O3/SiO2 mirror coatings prepared by E-beam evaporation

Laser conditioning effects of the dielectric mirror coatings with different designs were investigated. Simple quarter-wave ZrO2:Y2O3/SiO2 mirrors and half-wave SiO2 over-coated ZrO2:Y2O3/SiO2 mirror coatings were fabricated by E-beam evaporation (EBE). The absorbance of the samples before and after laser conditioning was measured by surface thermal lensing (STL) technology and the defects density was detected under Nomarski microscope. The enhancement of the laser damage resistance was found after laser conditioning. The dependence of the laser conditioning on the coating design was also observed and the over-coated sample obtained greatest enhancement, whereas the absorbance of the samples did not change obviously. During the sub-threshold fluence raster scanning, the minor damage about defects size was found and the assumption of pre-damage mechanism, based on the functional damage concept, was put forward. The improvement of the laser induced damage threshold (LIDT) was attributed to the benign damage of the defects and the dependence on the coating design owed to the damage growth behavior of different coating designs. (C) 2004 Elsevier B.V. All rights reserved.

Thermodynamic damage mechanism of transparent films caused by a low-power laser

A new model for analyzing the laser-induced damage process is provided. In many damage pits, the melted residue can been found. This is evidence of the phase change of materials. Therefore the phase change of materials is incorporated into the mechanical damage mechanism of films. Three sequential stages are discussed: no phase change, liquid phase change, and gas phase change. To study the damage mechanism and process, two kinds of stress have been considered: thermal stress and deformation stress. The former is caused by the temperature gradient and the latter is caused by high-pressure drive deformation. The theory described can determine the size of the damage pit. (c) 2006 Optical Society of America.

Damage on HfO2/SiO2 high-reflecting coatings under single and multiple Nd:YAG laser pulse irradiation

The single- and multi-shot damage behaviors of HfO2/SiO2 high-reflecting (HR) coatings under Nd:YAG laser exposure were investigated. Fundamental aspects of multi-shot laser damage, such as the instability due to pulse-to-pulse accumulation of absorption defect and structural defect effect, and the mechanism of laser induced defect generation, are considered. It was found in multi-shot damage, the main factors influencing laser-induced damage threshold (LIDT) are accumulation of irreversible changes of structural defects and thermal stress that induced by thermal density fluctuations.

Effect of process parameters on laser damage threshold of TiO2 coatings

We investigate the laser damage behaviour of an electron-beam-deposited TiO2 monolayer at different process parameters. The optical properties, chemical composition, surface defects, absorption and laser-induced damage threshold (LIDT) of Elms are measured. It is found that TiO2 Elms with the minimum absorption and the highest LIDT can be fabricated using a TiO2 starting material after annealing. LIDT is mainly related to absorption and is influenced by the non-stoichiometric defects for TiO2 films. Surface defects show no evident effects on LIDT in this experiment.

Effects of oxygen partial pressure on packing density and laser damage threshold of TiO2 thin films

TiO2 films are deposited by electron beam evaporation as a function of oxygen partial pressure. The packing density, refractive index, and extinction coefficient all decrease with the increase of pressure, which also induces the change of the film's microstructure, such as the increase of voids and H2O concentration in the film. The laser-induced damage threshold (LIDT) of the film increases monotonically with the rise of pressure in this experiment. The porous structure and low nonstoichiometric defects absorption contribute to the film's high LIDT. The films prepared at the lowest and the highest pressure show nonstoichiometric and surface-defects-induced damage features, respectively.(C) 2007 American Institute of Physics.

Investigation of damage threshold to TiO2 coatings at different laser wavelength and pulse duration

Laser-induced damages to TiO2 single layers and TiO2/SiO2 high reflectors at laser wavelength of 1064 nm, 800 run, 532 urn, and pulse width of 12 ns, 220 ps, 50 fs, 8 ns are investigated. All films are prepared by electron beam evaporation. The relations among microstructure, chemical composition, optical properties and laser-induced damage threshold (LIDT), have been researched. The dependence of damage mechanism on laser wavelength and pulse width is discussed. It is found that from 1064 nm to 532 nm, LIDT is mainly absorption related, which is determined by film's extinction coefficient and stoichiometric defects. The rapid decrease of LIDT at 800 nm is due to the pulse width factor. TiO2 coatings are mainly thermally by damaged at long pulse (tau >= 220 ps). The damage shows ablation feature at 50 fs. (C) 2007 Elsevier B.V. All rights reserved.

Effects of deposition rates on laser damage threshold of TiO2/SiO2 high reflectors

TiO2 single layers and TiO2/SiO2 high reflectors (HR) are prepared by electron beam evaporation at different TiO2 deposition rates. It is found that the changes of properties of TiO2 films with the increase of rate, such as the increase of refractive index and extinction coefficient and the decrease of physical thickness, lead to the spectrum shift and reflectivity bandwidth broadening of HR together with the increase of absorption and decrease of laser-induced damage threshold. The damages are found of different morphologies: a shallow pit to a seriously delaminated and deep crater, and the different amorphous-to-anatase-to-rutile phase transition processes detected by Raman study. The frequency shift of Raman vibration mode correlates with the strain in. film. Energy dispersive X-ray analysis reveals that impurities and non-stoichiometric defects are two absorption initiations resulting to the laser-induced transformation. (C) 2008 Elsevier B. V. All rights reserved.

Investigation of self excited and acoustically forced combustion instabilities with laser diagnostics

Combustion oscillations in gas turbines can result in serious damage. One method used to predict such oscillations is to analyze the combustor acoustics using a simple linear model. Such a model requires a flame transfer function to describe the response of the heat release to flow perturbations inside the combustor. This paper reports on the application of Planar Laser Induced Fluorescence (PLIF) of OH radicals to analyze the response of a lean premixed flame to oncoming flow perturbations. Both self-excited oscillations and low amplitude forced oscillations at various frequencies are investigated in an atmospheric pressure model combustor rig. In order to visualize fluctuations of local fuel distribution, acetone-PLIF was also applied in non-reacting and acoustically forced flows at oscillation frequencies of 200 Hz and 510 Hz, respectively. OH-PLIF images were acquired over a range of operating parameters. The results presented in this paper originate from data sets acquired at fixed phase angles during the oscillation cycle. Comparative experiments in self excited and forced acoustic oscillations show that the flame and the combustion intensity develop similarly throughout the pressure cycle in both cases. Although the peak fluorescence intensities differ between self excited and the forced instabilities, there is a clear correspondence in the observed frequency and phase information from the two cases. This result encourages a comparison of the OH-PLIF and the acetone-PLIF results. Quantitative measurements of the equivalence ratio in specific areas of the measurement plane offer insight on the complex phenomena coupling acoustic perturbations, i.e. flow velocity fluctuations, to fluctuations in fuel distribution and combustion intensity, ultimately resulting in self excited combustion oscillations.

Small SiGe quantum dots obtained by excimer laser annealing

In this paper, we obtain SiGe quantum dots with the diameters and density of 15-20 nm and 1.8 x 10(11) cm(-2), respectively, by 193 nm excimer laser annealing of Si0.77Ge0.23 strained films. Under the excimer laser annealing, only surface atoms diffusion happens. From the detailed statistical information about the size and shape of the quantum dots with different annealing time, it is shown that the as-grown self-assembled quantum dots, especially the {105}-faceted dots, are not stable and disappear before the appearance of the laser-induced quantum dots. Based on the calculation of surface energy and surface chemical potential, we show that the {103}-faceted as-grown self-assembled quantum dots are more heavily strained than the {105}-faceted ones, and the heavy strain in the dot can decrease the surface energy of the dot facets. The formation of the laser-induced quantum dots, which is also with heavy strain, is attributed to kinetic constraint. (c) 2008 Elsevier B.V. All rights reserved.

Pulsed excimer laser annealing of Mg-doped cubic GaN

A KrF (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing (PLA) on Mg-doped cubic GaN alms. The laser-induced changes were monitored by photoluminescence (PL) measurement. It indicated that deep levels in as-grown cubic GaN : Mg films were neutralized by H and PLA treatment could break Mg-H-N complex. The evolution of emissions around 426 and 468 nm with different PLA conditions reflected the different activation of the involved deep levels. Rapid thermal annealing (RTA) in N-2 atmosphere reverts the luminescence of laser annealed samples to that of the pre-annealing state. The reason is that most H atoms still remained in the epilayers after PLA due to the short duration of the pulses and reoccupied the original locations during RTA. (C) 2000 Elsevier Science B.V. All rights reserved. PACS: 61.72.Vv; 61.72.Cc; 18.55. -m.

Temperature-stimulated abnormal annealing of neutron-induced damage in high-resistivity silicon detectors

Neutron-irradiated high-resistivity silicon detectors have been subjected to elevated temperature annealing (ETA). It has been found that both detector full depletion voltage and leakage current exhibit abnormal annealing (or ''reverse annealing'') behaviour for highly irradiated detectors: increase with ETA. Laser induced current measurements indicate a net increase of acceptor type space charges associated with the full depletion voltage increase after ETA. Current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC) data show that the dominant effect is the increase of a level at 0.39 eV below the conduction band (E(c) - 0.39 eV) or a level above the valence band (E(v) + 0.39 eV). Candidates tentatively identified for this level are the singly charged double vacancy (V-V-) level at E(c) - 0.39 eV, the carbon interstitial-oxygen interstitial (C-i-O-i) level at E(v) + 0.36 eV, and/or the tri-vacancy-oxygen center (V3O) at E(v) + 0.40 eV.

Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing

Ge self-assembled quantum dots (SAQDs) are grown with a self-assembled UHV/CVD epitaxy system. Then,the as-grown Ge quantum dots are annealed by ArF excimer laser. In the ultra-shot laser pulse duration,～20ns, bulk diffusion is forbidden, and only surface diffusion occurs, resulting in a laser induced quantum dot (LIQD). The diameter of the LIQD is 20～25nm which is much smaller than the as-grown dot and the LIQD has a higher density of about 6 × 10~(10)cm~(-2). The surface morphology evolution is investigated by AFM.