Ecballocystopsis dichotomus sp. nov. (Chlorococcales, Chlorophyceae) from China

Ecballocystopsis dichotomus sp. nov. is the third described species of Ecballocystopsis that grows on rock under water and epiphytically on the filaments of Cladophora and Mougeotia (green algae) collected in a small irrigation ditch in Chong-yang county, Hubei Province (East longitude 29 degrees 30', North latitude 114 degrees 10') and in Zhu-xi county, Hubei Province (East longitude 32 degrees 20', North latitude 109 degrees 45'). The new species differs from E. indica IYENGAR (1933) in having dichotomous branching and its smaller sized thallus; it differs from the second species, E. desikacharyi PRASAD (1985), in having looped filaments, dichotomous branching and smaller cells. Three patterns of cell divisions were observed in E. dichotomus sp. nov. (transverse, longitudinal and oblique). It may be that the new species is evolutionary a more advanced species based upon the structure of its thallus and the manner of spore formation. The systematic position of the genus, based on the comparative studies of the genus Ecballocystis BOHLIN with Cylindrocapsopsis IYENGAR, is discussed.

An evidence of defect gettering in GaN

The effect of Neon ion implantation on the structural and optical properties of MOCVD grown GaN was studied. X-ray diffraction and low temperature photoluminescence measurements were carried out on the implanted samples annealed at 900 degrees C. The peak at 3.41 eV exhibited an interesting behavior in as-grown and the implanted samples. Annealing has enhanced the intensity of this peak in as-grown samples, but suppressed in all the implanted samples. Capturing of defects by cavities during gettering process is interpreted as the reason for the observed behavior of this luminescence peak. Implantation dose of 5 x 10(15) ions/cm(2) caused the complete quenching of yellow band luminescence. (C) 2008 Elsevier B.V. All rights reserved.

White light emission from ultraviolet laser diode

A phosphor-conversion white light using an InGaN laser diode that emits 405 nm near-ultraviolet (n-UV) light and phosphors that emit in the red/green/blue region when excited by the n-UV light was fabricated. The relationship of the luminous flux and the luminous efficacy of the white light with injection current were discussed. Based on the evaluation method for luminous efficacy of light sources established by the Commission International de I'Eclairage (CIE) and the phosphor used in this experiment, a theoretical analysis of the experiment results and the maximum luminous efficacy of this white light fabrication method were also presented.

Defect evolution and accompanied change of electrical properties during the GaN growth by metalorganic chemical vapor deposition

The defect evolution and its correlation with electrical properties of GaN films grown by metalorganic chemical vapor deposition are investigated. It is found that the dislocation density decreases gradually during the growth process, and the dislocation reduction rate in the island coalescence process is especially rapid. The changes in electron mobility of GaN with the increase of growth time are mainly dependent on the dislocations acting as scattering centers. Furthermore, the variation of carrier concentration in GaN may be related with the point defects and their clusters. The quality of GaN could be improved by suitably increasing the film thickness. (C) 2009 Elsevier B.V. All rights reserved.

Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates

Cubic GaN/GaAs(0 0 1) epilayers and hexagonal inclusions are characterized by X-ray diffraction (XRD), Photoluminescence (PL), Raman spectroscopy, and transmission electron microscopy (TEM). The X-ray {0 0 0 2} and (1 0 (1) over bar 0) pole figures show that the orientation relationships between cubic GaN and hexagonal inclusions are (1 1 1)//(0 0 0 1), <1 1 2 >//<1 0 (1) over bar 0 >. The distribution of hexagonal inclusions mainly results from the interfacial bonding disorder in the grain boundaries parallel to hexagonal <0 0 0 1 > directions and the lattice mismatch in <0 0 0 1 > directions on {1 0 (1) over bar 0} planes. In order to reduce the energy increase in cubic epilayers, hexagonal lamellas with smaller sizes in <0 0 0 1 > directions often nucleate inside the buffer layer or near the interface between the buffer layer and the epitaxial layer, and penetrate through the whole epitaxial layer with this orientation relationship. (C) 2001 Elsevier Science B.V. All rights reserved.

Hydrogen contaminant and its correlation with background electrons in GaN

GaN epilayers grown by molecular beam epitaxy using NH3 as the nitrogen source were found to contain hydrogen. We further notice that the background electron concentration in GaN can be correlated with the amount of hydrogen contaminant. X-ray photoelectron spectroscopy (XPS) measurements of the N Is peak reveal that hydrogen is bound to nitrogen. This will make the corresponding Ga atom see insufficient N counterpart, as can be inferred from the XPS Ga 3d spectrum. We then think that nitrogen in the lattice terminated by hydrogen is an effective nitrogen vacancy and hence a donor accounting for the background electrons.

New insight into the origin of twin and grain boundary in InP

X-ray reflectivity curves show bi-crystal (twin) characteristics. Defect segregations at the twin boundary can be seen, whereas stress is relaxed at the edge of the boundary. Relaxation of the stress resulted in the formation of twins and other defects. As a result of the formation of such defects, a defect-free and stress-free zone or low defect density and small stress zone is created around the defects. Stress, chemical stoichiometry deviation and non-homogeneous distribution of impurities are the key factors that cause twins in LEC InP crystal growth. (C) 1999 Elsevier Science Ltd. All rights reserved.

MST在手写汉字切分中的应用

手写汉字切分是根据输入笔迹的空间位置关系进行汉字部件的合并切分,形成完整的汉字笔划以便进行识别处理.综合利用了汉字部件的结构位置关系和笔划的空间位置关系,根据笔划的最小生成树(minimalspanningtree,简称MST)对联机连续手写输入汉字进行切分,取得了较好的切分结果.切分的准确率超过91.6%.

Use of electrical resistance to detect the formation and decomposition of methane hydrate

The changes of electrical resistance (R) were studied experimentally in the process of CH4 hydrate formation and decomposition, using temperature and pressure as the auxiliary detecting methods simultaneously. The experiment results show that R increases with hydrate formation and decreases with hydrate decompositon. R is more sensitive to hydrate formation and decompositon than temperature or pressure, which indicates that the detection of R will be an effective means for detecting natural gas hydrate (NGH) quantitatively.

黄河中游地区年径流对土地利用变化时空响应分析

以黄河中游河龙区间为研究区,以水土流失综合治理及生态环境建设导致的土地利用/覆被变化为背景,采用非参数统计法,基于区内38个水文站20世纪50年代至2000年水文数据,分析流域年径流对土地利用/覆被变化响应的时空变异特征,估算影响因素贡献率。结果表明:其中29条流域年径流量呈显著减少趋势,变率为0.17~2.61 mm/a;28条流域年径流量具有显著跃变时间,无定河流域各水文站跃变时间多在1970—1973年间,其余则多为1978—1985年,最晚为1994年;在5%、50%和95%的发生频率上,跃变前后时段年径流量减少幅度以30%~60%普遍,最大分别为73.2%、63.5%和69.7%;河龙区间整体呈显著减少趋势,变率为0.79 mm/a,跃变时间发生在1979年,3个频率上的减少幅度分别为46.5%、42.4%和24.1%。估算的11条流域中有9条土地利用/覆被变化等人类活动对流域径流减少影响程度超过50%。水土保持措施面积的增加,尤其淤地坝等水利水保工程措施的持续修建,对区域地表径流变化具有明显影响。

黄土高原侵蚀区长芒草对坡地土壤水分养分的影响

在黄土高原神木六道沟流域选相邻退耕坡地和裸地,均匀布点采样结合室内分析,采用SPSS处理数据,研究30龄长芒草(Stipa bungeana)对土壤水分、养分的影响。结果表明:在长芒草根系分布区土壤水分下降很快,并且形成干层,其中40~60 cm含水量均低于5.5%,最低达3.2%;同时,长芒草可使土壤养分在表层累积,而降低20~50cm土层处养分含量;全氮、全磷、有机质、硝态氮和铵态氮含量均随土层的加深而降低。