Design and path planning for a remote-brained service robot

This paper presents a novel robot named "TUT03-A" with expert systems, speech interaction, vision systems etc. based on remote-brained approach. The robot is designed to have the brain and body separated. There is a cerebellum in the body. The brain with the expert systems is in charge of decision and the cerebellum control motion of the body. The brain-body. interface has many kinds of structure. It enables a brain to control one or more cerebellums. The brain controls all modules in the system and coordinates their work. The framework of the robot allows us to carry out different kinds of robotics research in an environment that can be shared and inherited over generations. Then we discuss the path planning method for the robot based on ant colony algorithm. The mathematical model is established and the algorithm is achieved with the Starlogo simulating environment. The simulation result shows that it has strong robustness and eligible pathfinding efficiency.

Simulation of a monolithically integrated CMOS bioamplifier for EEG recordings

A monolithically integrated CMOS bioamplifier is presented in this paper for EEG recording applications. The capacitive-coupled circuit input structure is utilized to eliminate the large and random DC offsets existing in the electrode-tissue interface. Diode-connected NMOS transistors with negative voltage between gate and source are candidates for large resistors necessary to the bioamplifier. A passive BEF (Band Eliminator Filter) can reduce 50 Hz noise disturbance strength by more than 60 dB. A novel analysis approach is given to help determine the noise power spectral density. Simulation results show that the two-stage CMOS bioamplifier in a closed-loop capacitive feedback configuration,provides an AC in-band gain of 39.6 dB, a DC gain of zero, and an input-referred noise of 87 nVrms integrated from 0.01 Hz to 100 Hz.

A standard CMOS compatible monolithic photo-detector and trans-impedance amplifier

A 1GHz monolithic photo-detector (PD) and trans-impedance amplifier (TIA) is designed with the standard 0.35 mu m CMOS technique. The design of the photo-detector is analyzed and the CMOS trans-impedance amplifier is also analyzed in the paper. The integrating method is described too. The die photograph is also showed in the paper.

A CMOS front-end circuit for SONET OC-96 receiver

An optical receiver front-end for SONET OC-96 receivers was analyzed and designed in 0.18 mu m CMOS process. It consists of a transimpedance amplifier (TIA) and a limiting amplifier (LA). The TIA takes a fully differential configuration, and regulated cascode (RGC) input stage is implemented. The LA was realized by five cascaded identical gain stages with active inductor load. The TIA achieved 4.2GHz bandwidth for 0.5pF photodiode (PD) capacitance and 1.2k 0 transimpedance gain. The LA achieved 5.4GHz bandwidth and 29dB voltage gain. The optical sensitivity is -19dBm at 5-Gb/s for a bit-error rate of 10(-12), and it dissipates 45.5mW for I.8V supply.

A silicon light emitting devices in standard CMOS technology

A silicon light emitting device is designed and simulated. It is fabricated in 0.6 mum standard CMOS technology. The device can give more than 1 muW optical power of visible light under reverse breakdown. The device can be turned on at a bias of 0.88 V and work in a large range of voltage: 1.0-6.0 V The external electrical-optical conversion efficiency is more than 10(-6). The optical spectrum of the device is between 540-650 nm, which have a clear peak near 580 nm. The emission mechanism can be explained by a hot carrier direct recombination model.

Behavior model of a CMOS process compatible photo-diode

A behavior model of a photo-diode is presented. The model describes the relationship between photocurrent and incident optical power, and it also illustrates the impact of the reverse bias to the variation of the junction capacitance. With this model, the photo-diode and a CMOS receiver circuit were simulated and designed simultaneously under a universal circuit simulation environment.

An analysis and simulation about conditioned launch for very short reach (VSR-4)

VSR4 links use graded index multimode fibers (GIMMFs) as the transmission medium with operation wavelength 850nm. For cost reasons, VCSEL has been selected as the optical source to VSR4. The minimum bandwidth specification for 62.5um GIMMF in VSR4 is only 400 MHz(.)km for over-filled-launch (OFL) condition. The distance of 300 meters is limited over transmission rates of 1.25Gbit/s on the basis of this specification. In order to overcome the OFL bandwidth limit by selective excitation of a limited number of modes, conditioned launch technique is investigated. In this paper, based on a comprehensive dispersion theory of GIMMF, a model is built to simulate the transmission of optical signal in GIMMFs and a comparison between OFL and conditioned launch is analyzed. The result can be the guidelines for the best choice of techniques for various LAN and interconnect systems also.

VCSEL-based parallel optical transmission module

This paper describes the design process and performance of the optimized parallel optical transmission module. Based on 1x12 VCSEL (Vertical Cavity Surface Emitting Laser) array, we designed and fabricated the high speed parallel optical modules. Our parallel optical module contains a 1x12 VCSEL array, a 12 channel CMOS laser driver circuit, a high speed PCB (Printed Circuit Board), a MT fiber connector and a packaging housing. The L-I-V characteristics of the 850nm VCSEL was measured at the operating current 8mA, 3dB frequency bandwidth more than 3GHz and the optical output 1mW. The transmission rate of all 12 channels is 30Gbit/s, with a single channel 2.5Gbit/s. By adopting the integration of the 1x12 VCSEL array and the driver array, we make a high speed PCB (Printed Circuit Board) to provide the optoelectronic chip with the operating voltage and high speed signals current. The LVDS (Low-Voltage Differential Signals) was set as the input signal to achieve better high frequency performance. The active coupling was adopted with a MT connector (8 degrees slant fiber array). We used the Small Form Factor Pluggable (SFP) packaging. With the edge connector, the module could be inserted into the system dispense with bonding process.

Proposed scheme for parallel 10Gb/s VSR system and its Verilog HDL realization

This paper proposes a novel and innovative scheme for 10Gb/s parallel Very Short Reach (VSR) optical communication system. The optimized scheme properly manages the SDH/SONET redundant bytes and adjusts the position of error detecting bytes and error correction bytes. Compared with the OIF-VSR4-01.0 proposal, the scheme has a coding process module. The SDH/SONET frames in transmission direction are disposed as follows: (1) The Framer-Serdes Interface (FSI) gets 16x622.08Mb/s STM-64 frame. (2) The STM-64 frame is byte-wise stripped across 12 channels, all channels are data channels. During this process, the parity bytes and CRC bytes are generated in the similar way as OIF-VSR4-01.0 and stored in the code process module. (3) The code process module will regularly convey the additional parity bytes and CRC bytes to all 12 data channels. (4) After the 8B/10B coding, the 12 channels is transmitted to the parallel VCSEL array. The receive process approximately in reverse order of transmission process. By applying this scheme to 10Gb/s VSR system, the frame size in VSR system is reduced from 15552x12 bytes to 14040x12 bytes, the system redundancy is reduced obviously.

Subretinal implantable artificial photoreceptor

The present study reports a subretinal implant device which can imitate the function of photoreceptor cells. Photodiode (PD) arrays on the chip translate the incident light into current according to the intensity of light. With an electrode at the end of every photodiode, the PDs transfer the current to the remnant healthy visual cells such as bipolar cells and horizontal cells and then activate these cells. Biocompatible character of the materials and artificial photoreceptor itself were tested and the photoelectric characteristics of the chips in simulative condition were described and discussed.

Circuit design and simulation of a CMOS-based preamplifier for brain neural signals

A novel CMOS-based preamplifier for amplifying brain neural signal obtained by scalp electrodes in brain-computer interface (BCI) is presented in this paper. By means of constructing effective equivalent input circuit structure of the preamplifier, two capacitors of 5 pF are included to realize the DC suppression compared to conventional preamplifiers. Then this preamplifier is designed and simulated using the standard 0.6 mu m MOS process technology model parameters with a supply voltage of 5 volts. With differential input structures adopted, simulation results of the preamplifier show that the input impedance amounts to more than 2 Gohm with brain neural signal frequency of 0.5 Hz-100 Hz. The equivalent input noise voltage is 18 nV/Hz(1/2). The common mode rejection ratio (CMRR) of 112 dB and the open-loop differential gain of 90 dB are achieved.

Electrical and Optical Phase Transition Properties of Nano Vanadium Dioxide Thin Films

Nano-vanadium dioxide thin films were prepared through thermal annealing vanadium oxide thin films deposited by dual ion beam sputtering. The nano-vanadium dioxide thin films changed its state from semiconductor phase to metal phase through heating by homemade system. Four point probe method and Fourier transform infrared spectrum technology were employed to measure and anaylze the electrical and optical semiconductor-to-metal phase transition properties of nano-vanadium dioxide thin films, respectively. The results show that there is an obvious discrepancy between the semiconductor-to-metal phase transition properties of electrical and optical phase transition. The nano-vanadium dioxide thin films' phase transiton temperature defined by electrical phase transiton property is 63 degrees C, higher than that defined by optical phase transiton property at 5 mu m, 60 degrees C; and the temperature width of electrical phase transition duration is also wider than that of optical phase transiton duration. The semiconductor-to-metal phase transiton temperature defined by optical properties increases with increasing wavelength in the region of infrared wave band, and the occuring temperature of phase transiton from semiconductor to metal also increases with wavelength increasing, but the duration temperature width of transition decreases with wavelength increasing. The phase transition properties of nano-vanadium dioxide thin film has obvious relationship with wavelength in infrared wave band. The phase transition properties can be tuned through wavelength in infrared wave band, and the semiconductor-to-metal phase transition properties of nano vanadiium dioxide thin films can be better characterized by electrical property.

非洲爪蛙分泌型叶酸结合蛋白及NKX6.3在早期胚胎神经发育中的功能研究

叶酸是B族维生素的一员，参与体内一系列重要的生命过程包括DNA，氨基酸的合成，调控细胞周期，参与一碳单位供体循环，调节DNA,蛋白质甲基化等。叶酸的许多功能都和叶酸结合蛋白有关，体内有多种跨膜形式的叶酸结合蛋白，比如Folbp1，RFC，HCP等。以前的研究表明这些不同的叶酸结合蛋白具有不同的功能。分泌型叶酸结合蛋白是另外一类叶酸结合蛋白，在人类，小鼠，猪中都有序列报道，但是其功能却知之甚少。 我们在非洲爪蛙中鉴定出一个全新的分泌型叶酸结合蛋白并命名为Secreted Folate Binding Protein(sFBP)。在胚胎和转染细胞系中我们都证明该蛋白是分泌性的，表面等离子共振实验发现sFBP能够结合叶酸。在胚胎早期这个基因表达于粘液腺和神经板区域，神经管闭合后在神经管、粘液腺、眼睛，头部以及鳃弓都有表达。特异morpholino 阻断sFBP翻译后发现粘液腺发育异常，神经管闭合缺陷，前后体轴聚集延伸运动受到抑制，尾芽期胚胎表现出体轴缩短，无眼，小头或无头的表型。进一步研究发现显微注射sFBP morpholino 的胚胎神经板区域细胞发生凋亡，中胚层和神经外胚层的一系列粘附分子表达异常，神经细胞的正常分化也受到抑制。通过显微移植实验我们还发现抑制sFBP的翻译后，神经嵴细胞的正常分化和迁移都受到抑制。但是，显微注射叶酸及其类似物或者显微注射甲基供体S-腺苷甲硫氨酸或者亮氨酸甲基转移酶都不能挽救阻断sFBP造成的表形，由此提示sFBP可能不是通过叶酸传统的参与营养合成或者甲基化的途径发挥作用。我们发现注射sFBP morpholino可以抑制Islet-1mRNA和蛋白质的表达，Islet-1的表达区域与sFBP类似。共同注射Islet-1 mRNA和sFBP morpholino可以极大的挽救sFBP morpholino的表型。最后通过morpholino特异阻断Islet-1的表达后，我们发现其表现出与sFBP morpholino类似的粘液腺发育缺陷，神经板细胞凋亡，小头无眼的表形。由此叶酸是B族维生素的一员，参与体内一系列重要的生命过程包括DNA，氨基酸的合成，调控细胞周期，参与一碳单位供体循环，调节DNA,蛋白质甲基化等。叶酸的许多功能都和叶酸结合蛋白有关，体内有多种跨膜形式的叶酸结合蛋白，比如Folbp1，RFC，HCP等。以前的研究表明这些不同的叶酸结合蛋白具有不同的功能。分泌型叶酸结合蛋白是另外一类叶酸结合蛋白，在人类，小鼠，猪中都有序列报道，但是其功能却知之甚少。 我们在非洲爪蛙中鉴定出一个全新的分泌型叶酸结合蛋白并命名为Secreted Folate Binding Protein(sFBP)。在胚胎和转染细胞系中我们都证明该蛋白是分泌性的，表面等离子共振实验发现sFBP能够结合叶酸。在胚胎早期这个基因表达于粘液腺和神经板区域，神经管闭合后在神经管、粘液腺、眼睛，头部以及鳃弓都有表达。特异morpholino 阻断sFBP翻译后发现粘液腺发育异常，神经管闭合缺陷，前后体轴聚集延伸运动受到抑制，尾芽期胚胎表现出体轴缩短，无眼，小头或无头的表型。进一步研究发现显微注射sFBP morpholino 的胚胎神经板区域细胞发生凋亡，中胚层和神经外胚层的一系列粘附分子表达异常，神经细胞的正常分化也受到抑制。通过显微移植实验我们还发现抑制sFBP的翻译后，神经嵴细胞的正常分化和迁移都受到抑制。但是，显微注射叶酸及其类似物或者显微注射甲基供体S-腺苷甲硫氨酸或者亮氨酸甲基转移酶都不能挽救阻断sFBP造成的表形，由此提示sFBP可能不是通过叶酸传统的参与营养合成或者甲基化的途径发挥作用。我们发现注射sFBP morpholino可以抑制Islet-1mRNA和蛋白质的表达，Islet-1的表达区域与sFBP类似。共同注射Islet-1 mRNA和sFBP morpholino可以极大的挽救sFBP morpholino的表型。最后通过morpholino特异阻断Islet-1的表达后，我们发现其表现出与sFBP morpholino类似的粘液腺发育缺陷，神经板细胞凋亡，小头无眼的表形。由此我们认为sFBP结合叶酸后可能通过细胞膜上的受体传递信号，并且Islet-1可能在sFBP的下游发挥作用。 神经嵴是脊椎动物特有的一群多潜能干细胞，产生于表皮和神经板的边界，在原肠运动之后这群细胞通过表皮间充值转换从神经管背侧迁移到不同的区域，分化成不同的细胞类型，包括外周神经系统，色素细胞，软骨等。神经嵴的发生是一个多步骤多基因参与的精细调控过程。目前理论认为最初由一些分泌性信号分子又叫形态生成素比如BMP,Wnt，FGF，Notch等通过不同浓度梯度的相互作用调节一组在表皮和神经板边界的转录因子（Msx、Pax3/7、Zic1、Dlx3/5等）的表达，即边界决定。这些边界决定因子进一步在预定形成神经嵴的区域激活神经嵴特化基因比如Slug/Snail、FoxD3、Twist、Sox9/10的表达完成神经嵴的特化（Specification）。 Nkx6.3是Nkx6家族的一个转录因子，RT-PCR显示其呈现母源性表达。特异抗体显示Nkx6.3蛋白第9期在整个胚胎都表达，大部分蛋白集中在细胞核，有少部分蛋白定位于细胞膜上；神经板时期主要定位于神经嵴区域的细胞膜上。过表达Nkx6.3会影响细胞粘连分子的表达，由此干扰正常的胚胎原肠运动和Activin诱导的动物帽聚集延伸运动。显微注射Nkx6.3特异morpholino阻断其蛋白表达会抑制神经嵴的marker基因Wnt8，Fgf8，Pax3，Msx1，Zic1，FoxD3，Slug的转录，阻碍神经嵴的发育。在动物帽中单独注射Nkx6.3可以在mRNA水平上诱导Wnt8、Fgf8另一方面抑制BMP4的表达进而诱导神经嵴基因Pax3，Zic1，Slug的表达。报告基因实验也显示Nkx6.3能够激活Wnt信号而在动物帽中抑制BMP信号。Nkx6.3蛋白功能域分析发现其EH1结构域（domain）参与对Wnt8信号的激活，而EH1结构域和HD结构域之间的连接区域（linker domain）参与对FGF的激活和对BMP的抑制。进一步在动物帽和胚胎中分析发现Nkx6.3对Wnt8的激活依赖于FGF家族受体信号但是不依赖于Fgf8。有趣的是4细胞时期过表达Nkx6.3促进Fgf8和Wnt8 mRNA表达，但是抑制边界决定基因Msx1、Pax3和神经嵴特化基因Slug的转录。在32细胞时期显微注射Nkx6.3可以在内源神经嵴发生区域抑制Slug的表达，而异位却诱导Slug的mRNA。我们发现与动物帽中对BMP的调节不同，在胚胎中，过表达Nkx6.3会强烈的激活Smad1蛋白在细胞核中的表达即BMP信号被激活，高的BMP信号会抑制神经嵴的发生。另外我们发现过表达Nkx6.3在胚胎中抑制Dlx5而在动物帽中却不影响Dlx5的表达水平，Morpholino阻断Dlx5会抑制Msx1、Pax3和Slug的表达。BMP信号和Dlx5在动物帽和在整体胚胎中对Nkx6.3的不同响应可以一定程度上解释过表达Nkx6.3在2个系统中对神经嵴基因Slug相反的影响结果。

CONTINUUM-THEORIES OF OPTICAL PHONONS AND POLARITONS IN SUPERLATTICES - A BRIEF CRITIQUE - COMMENT

The so-called hydrodynamic (HD) model on optical-phonon modes in superlattices is critically examined. Contrary to the HD model, a comparison between TM polaritons and the Fuchs-Kliewer-type interface modes has shown that the Fuchs-Kliewer interface modes do possess Frohlich potentials.

EFFECT OF A SI LAYER ON THE SUPERCONDUCTIVE PROPERTIES OF A BIPBSRCACUO THIN-FILM

The Pb-doped BiSrCaCuO superconducting films were grown by the single source mixed evaporation technique. The microbridges of dimensions 50 mum x 40 mum were fabricated by standard photolithography technologies. Si films with a thickness of 2500 angstrom were deposited on the microbridge area surfaces of BiPbSrCaCuO superconducting films by rf-magnetron sputtering. A greatly lowered zero resistance temperature of the microbridge area of the BiPbSrCaCuO film after Si sputtering was found. A non-linear effect of the current-voltage (I-V) characteristics at 78 K was shown. The high-frequency capacitance-voltage (C-V) curve of this structure at 78 K was symmetrical with the maximum capacitance at V = 0, and the capacitance decreased with increasing applied bias voltage. Afl experimental results are discussed.