A standard CMOS compatible monolithic photo-detector and trans-impedance amplifier
| Data(s) |
2005
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|---|---|
| Resumo |
A 1GHz monolithic photo-detector (PD) and trans-impedance amplifier (TIA) is designed with the standard 0.35 mu m CMOS technique. The design of the photo-detector is analyzed and the CMOS trans-impedance amplifier is also analyzed in the paper. The integrating method is described too. The die photograph is also showed in the paper. A 1GHz monolithic photo-detector (PD) and trans-impedance amplifier (TIA) is designed with the standard 0.35 mu m CMOS technique. The design of the photo-detector is analyzed and the CMOS trans-impedance amplifier is also analyzed in the paper. The integrating method is described too. The die photograph is also showed in the paper. zhangdi于2010-03-29批量导入 zhangdi于2010-03-29批量导入 IEEE Electron Devices Soc.; IEEE Solid State Circuits Soc.; IEEE Hong Kong Sect.; KC Wong Educ Fdn.; Solomon Systech Ltd. Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China IEEE Electron Devices Soc.; IEEE Solid State Circuits Soc.; IEEE Hong Kong Sect.; KC Wong Educ Fdn.; Solomon Systech Ltd. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
IEEE 345 E 47TH ST, NEW YORK, NY 10017 USA |
| Fonte |
Chen, HD (Chen, Hongda); Gu, M (Gu, Ming); Huang, JL (Huang, Jiale); Gao, P (Gao, Peng); Mao, LH (Mao, Luhong) .A standard CMOS compatible monolithic photo-detector and trans-impedance amplifier .见：IEEE .2005 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS丛书标题: IEEE Conference on Electron Devices and Solid-State Circuits ,345 E 47TH ST, NEW YORK, NY 10017 USA ,2005,PROCEEDINGS: 721-724 |
| Palavras-Chave | #光电子学 |
| Tipo |
会议论文 |
