Behavior model of a CMOS process compatible photo-diode
| Data(s) |
2004
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|---|---|
| Resumo |
A behavior model of a photo-diode is presented. The model describes the relationship between photocurrent and incident optical power, and it also illustrates the impact of the reverse bias to the variation of the junction capacitance. With this model, the photo-diode and a CMOS receiver circuit were simulated and designed simultaneously under a universal circuit simulation environment. A behavior model of a photo-diode is presented. The model describes the relationship between photocurrent and incident optical power, and it also illustrates the impact of the reverse bias to the variation of the junction capacitance. With this model, the photo-diode and a CMOS receiver circuit were simulated and designed simultaneously under a universal circuit simulation environment. zhangdi于2010-03-29批量导入 zhangdi于2010-03-29批量导入 IEEE. Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China IEEE. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
IEEE 345 E 47TH ST, NEW YORK, NY 10017 USA |
| Fonte |
Gao, P; Chen, HD; Mao, LH .Behavior model of a CMOS process compatible photo-diode .见：IEEE .2004 IST IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS,345 E 47TH ST, NEW YORK, NY 10017 USA ,2004,110-112 |
| Palavras-Chave | #光电子学 #RECEIVERS |
| Tipo |
会议论文 |
