Dynamic properties of bright points in an active region

Context. Bright points (BPs) are small-scale, magnetic features ubiquitous across the solar surface. Previously, we have observed and noted their properties for quiet Sun regions. Here, we determine the dynamic properties of BPs using simultaneous quiet Sun and active region data.

Aims. The aim of this paper is to compare the properties of BPs in both active and quiet Sun regions and to determine any difference in the dynamics and general properties of BPs as a result of the varying magnetic activity within these two regions.

Methods. High spatial and temporal resolution G-band observations of active region AR11372 were obtained with the Rapid Oscillations in the Solar Atmosphere instrument at the Dunn Solar Telescope. Three subfields of varying polarity and magnetic flux density were selected with the aid of magnetograms obtained from the Helioseismic and Magnetic Imager on board the Solar Dynamics Observatory. Bright points within these subfields were subsequently tracked and analysed.

Results. It is found that BPs within active regions display attenuated velocity distributions with an average horizontal velocity of ~0.6 km s-1, compared to the quiet region which had an average velocity of 0.9 km s-1. Active region BPs are also ~21% larger than quiet region BPs and have longer average lifetimes (~132 s) than their quiet region counterparts (88 s). No preferential flow directions are observed within the active region subfields. The diffusion index (γ) is estimated at ~1.2 for the three regions.

Conclusions. We confirm that the dynamic properties of BPs arise predominately from convective motions. The presence of stronger field strengths within active regions is the likely reason behind the varying properties observed. We believe that larger amounts of magnetic flux will attenuate BP velocities by a combination of restricting motion within the intergranular lanes and by increasing the number of stagnation points produced by inhibited convection. Larger BPs are found in regions of higher magnetic flux density and we believe that lifetimes increase in active regions as the magnetic flux stabilises the BPs.

Evolution of Hot Loops in an Active Region Core Observed with the SDO Atmospheric Image Assembly

Evidence has accumulated of high temperature (> 4 MK) coronal emission in active region cores that corresponds to structures in equilibrium. Other studies have found evidence of evolving loops. We investigate the EUV intensity and temperature variations of short coronal loops observed in the core of NOAA Active Region 11250 on 13 July 2011. The loops, which run directly between the AR opposite polarities, are first detectable in the 94Å band of Fe XVIII, implying an effective temperature ~ 7 MK. The low temperature component of the 94 Å signal is modeled in terms of a linear superposition of the 193 Å and 171 Å signals in order to separate the hot component. After identifying the loops we have used contemporaneous HMI observations to identify the corresponding inter-moss regions, and we have investigated their time evolution in six AIA EUV channels. The results can be separated into two classes. Group 1 (94Å, 335Å, 211Å) is characterized by hotter temperatures (~2-7 MK), and Group 2 (193Å, 171Å, 131Å) by cooler temperatures (0.4 - 1.6 MK). For Group 1 the intensity peaks in the 94Å channel are followed by maxima in the 335 Å channel with a time lag of ~8 min, suggestive of a cooling pattern with an exponential decay. While the 211Å maxima follow those in the 335 Å channel, there is no systematic relation which would indicate a progressive cooling process through the lower temperatures, as has been observed in other investigations. In Group 2 the signals in the 171 and 131Å channels track each other closely, and lag behind the 193Å. In the inter-moss region of the loop the peak temperature and peak emission measure have opposite trends. The hot 94Å brightenings occur in the central part of the loops with maximum temperatures ~7 MK. Subsequently the loops appear to fill with plasma with an emission measure compatible with the 193 Å signal and temperature in the range ~ 1.5-2 MK. Although the exact details of the time evolution are still under investigation, these non static loops show high levels of intermittency in the 94Å signal (please see poster "Intermittent and Scale-Invariant Intensity Fluctuations in Hot Coronal Loops," by Lawrence et al. in this session).

A theoretical model for the magnetic helicity of solar active regions

Active regions on the solar surface are known to possess magnetic helicity, which is predominantly negative in the northern hemisphere and positive in the southern hemisphere. Choudhuri et al. [Choudhuri, A.R. On the connection between mean field dynamo theory and flux tubes. Solar Phys. 215, 31–55, 2003] proposed that the magnetic helicity arises due to the wrapping up of the poloidal field of the convection zone around rising flux tubes which form active regions. Choudhuri [Choudhuri, A.R., Chatterjee, P., Nandy, D. Helicity of solar active regions from a dynamo model. ApJ 615, L57–L60, 2004] used this idea to calculate magnetic helicity from their solar dynamo model. Apart from getting broad agreements with observational data, they also predict that the hemispheric helicity rule may be violated at the beginning of a solar cycle. Chatterjee et al. [Chatterjee, P., Choudhuri, A.R., Petrovay, K. Development of twist in an emerging magnetic flux tube by poloidal field accretion. A&A 449, 781–789, 2006] study the penetration of the wrapped poloidal field into the rising flux tube due to turbulent diffusion using a simple 1-d model. They find that the extent of penetration of the wrapped field will depend on how weak the magnetic field inside the rising flux tube becomes before its emergence. They conclude that more detailed observational data will throw light on the physical conditions of flux tubes just before their emergence to the photosphere.

The tangential discontinuous surface of velocity in solar chromosphere

The data of velocity and magnetic fields in the solar photosphere (5324 angstrom) and the chromosphere (4861 angstrom) clearly show the features of tangential discontinuity of velocity in the chromosphere. The velocity fields in and near the solar active region named No. 88029 by the Huairou Station have been analyzed in detail. A lot of magnetohydrodynamic discontinuous surfaces, especially the tangential discontinuities, are shown from the observations. The calculations of the thickness of discontinuous layer and the evolution time of instability agree with the observational results. The variations of the flow field will directly influence the evolutions and changes of the active region as the magnetic field are coupled closely with the plasma motion.

Explorations of electric-current system in solar active regions .1. Empirical inferences of the current flows

In this paper we explore techniques to identify sources of electric current systems and their channels of flow in solar active regions. Measured photospheric vector magnetic fields (VMF) together with high-resolution white-light and H filtergrams provide the data base to derive the current systems in the photosphere and chromosphere. Simple mathematical constructions of fields and currents are also adopted to understand these data. As an example, the techniques are then applied to infer current systems in AR 2372 in early April 1980. The main results are: (i) In unipolar sunspots the current density may reach values of 103 CGSE, and the Lorentz force on it can accelerate the Evershed flow, (ii) Spots exhibiting significant spiral pattrn in the penumbral filaments are the sources of vertical major currents at the photospheric surface, (iii) Magnetic neutral lines where the transverse field was strongly sheared were channels along which strong current system flows, (iv) The inferred current systems produced oppositely-flowing currents in the area of the delta configuration that was the site of flaring in AR 2372.

Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region

We have fabricated and characterized GaN-based vertical cavity surface emitting lasers (VCSELs) with a unique active region structure, in which three sets of InGaN asymmetric coupled quantum wells are placed in a half-wavelength (0.5 lambda) length. Lasing action was achieved under optical pumping at room temperature with a threshold pumping energy density of about 6.5 mJ/cm(2). The laser emitted a blue light at 449.5 nm with a narrow linewidth below 0.1 nm and had a high spontaneous emission factor of about 3.0x10(-2). The results indicate that this active region structure is useful in reducing the process difficulties and improving the threshold characteristics of GaN-based VCSELs.

High-power quantum-dot superluminescent LED with broadband drive current insensitive emission spectra using a tapered active region

High-power and broadband quantum-dot (QD) superluminescent light-emitting diodes are realized by using a combination of self-assembled QDs with a high density, large inhomogeneous broadening, a tapered angled pump region, and etched V groove structure. This broad-area device exhibits greater than 70-nm 3-dB bandwidth and drive current insensitive emission spectra with 100-mW output power under continuous-wave operation. For pulsed operation, greater than 200-mW output power is obtained.

A new p-n structure ultraviolet photodetector with p(-)-GaN active region

A new ultraviolet photodetector of employing p menus type GaN (p(-)-GaN) as the active layer is proposed. It is easy to obtain the p(-)-GaN layer with low carrier concentration. As a result, the depletion region can be increased and the quantum efficiency can be improved. The influence of some structure parameters on the performance of the new device is investigated. Through the simulation calculation, it is found that the quantum efficiency increases with the decrease of the barrier height between the metal electrode and the p(-)-GaN layer, and it is also found that the quantum efficiency can be improved by reducing the thickness of the p(-)-GaN layer. To fabricate the new photodetector with high performance, we should employ thin p(-)-GaN layer as the active layer and reduce the Schottky barrier height.

A novel application to quantum dot materials to the active region of superluminescent diodes

We have proposed a new superluminescent diodes (SLD) aimed at wide spectrum-quantum dot superluminescent diodes (QD-SLD), which is characterized by the introduction of a self-assembled asymmetric quantum dot pairs active region into conventional SLID structure. We investigated the structure and optical properties of a bilayer sample with different InAs deposition amounts in the first and second layer. We find that the structure of a self-assembled asymmetric quantum dot pairs can operate up to a 150 nm spectral width. In addition, as the first QDs' density can modulate the density of the QDs on the second layer, due to relatively high QDs density of the first layer, we can get the strong PL intensity from a broad range. We think that for the broad spectral width and the strong PL intensity, this structure can be a promising candidate for QW-SLD. (C) 2002 Elsevier Science B.V. All rights reserved.

Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency

Tunnel-regenerated multiple-active-region (TRMAR) light-emitting diodes (LEDs) with high quantum efficiency and high brightness have been proposed and fabricated. We have proved experimentally that the efficiency of the electrical luminescence and the on-axis luminous intensity of such TRMAR LEDs scaled linearly approximately with the number of the active regions. The on-axis luminous intensity of such TRMAR LEDs with only 3 mum GaP current spreading layer have exceeded 5 cd at 20 mA dc operation under 15 degrees package. The high-quantum-efficiency and high-brightness LEDs under the low injection level were realized. (C) 2001 American Institute of Physics.

Novel coupled multi-active region high power semiconductor lasers cascaded via tunnel junction

A novel semiconductor laser structure is put forward to resolve the major difficulties of high power laser diodes. In this structure, several active regions are cascaded by tunnel junctions to form a large optical cavity and to achieve super high efficiency. This structure can solve the problems of catastrophic optical damage of facet, thermal damage and poor light beam quality effectively. Low-pressure metalorganic chemical vapor deposition method is adopted to grow the novel semiconductor laser structures, which are composed of Si:GaAs/C:GaAs tunnel junctions, GaAs/InGaAs strain quantum well active regions. External differential quantum efficiency as high as 2.2 and light power output of 2.5 W per facet (under 2A drive current) are achieved from an uncoated novel laser device with three active regions.

High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition

We report on the material growth and fabrication of high-performance 980-nm strained quantum-well lasers employing a hybrid material system consisting of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers. The use of AlGaAs cladding instead of InGaP provides potential advantages in flexibility of laser design, simple epitaxial growth, and improvement of surface morphology and laser performance. The as-grown InGaAs-InGaAsP(1.6 eV)-AlGaAs(1.95 eV) lasers achieve a low threshold current density of 150 A/cm(2) (at a cavity length of 1500 mu m), internal quantum efficiency of similar to 95%, and low internal loss of 1.8 cm(-1). Both broad-area and ridge-waveguide laser devices are fabricated. For 100-mu m-wide stripe lasers with a cavity length of 800 Irm, a slope efficiency of 1.05 W/A and a characteristic temperature coefficient (T-0) of 230 K are achieved. The lifetime test demonstrates a reliable performance. The comparison with our fabricated InGaAs-InGaAsP(1.6 eV)-AlGaAs(1.87 eV) lasers and Al-free InGaAs-InGaAsP (1.6 eV)-InGaP lasers are also given and discussed. The selective etching between AlGaAs and InGaAsP is successfully used for the formation of a ridge-waveguide structure. For 4-mu m-wide ridge-waveguide laser devices, a maximum output power of 350 mW is achieved. The fundamental mode output power can be up to 190 mW with a slope efficiency as high as 0.94 W/A.

High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide

The 940 nm Al-free active region laser diodes and bars with a broad waveguide were designed and fabricated. The stuctures were grown by metal organic chemical vapour deposition. The devices show excellent performances. The maximum output power of 6.7 W in the 100 f^m broad-area laser diodes has been measured, and is 2. 5 times higher than that in the Al-containing active region laser diodes with a narrow waveguide and 1. 7 times higher than that in Al-free active region laser diodes with a narrow waveguide. The 19 % fill-factor laser diode bars emit 33 W, and they can operate at 15W with low degradation rates.