A novel application to quantum dot materials to the active region of superluminescent diodes


Autoria(s): Zhang ZY; Meng XQ; Jin P; Li CM; Qu SC; Xu B; Ye XL; Wang ZG
Data(s)

2002

Resumo

We have proposed a new superluminescent diodes (SLD) aimed at wide spectrum-quantum dot superluminescent diodes (QD-SLD), which is characterized by the introduction of a self-assembled asymmetric quantum dot pairs active region into conventional SLID structure. We investigated the structure and optical properties of a bilayer sample with different InAs deposition amounts in the first and second layer. We find that the structure of a self-assembled asymmetric quantum dot pairs can operate up to a 150 nm spectral width. In addition, as the first QDs' density can modulate the density of the QDs on the second layer, due to relatively high QDs density of the first layer, we can get the strong PL intensity from a broad range. We think that for the broad spectral width and the strong PL intensity, this structure can be a promising candidate for QW-SLD. (C) 2002 Elsevier Science B.V. All rights reserved.

Identificador

http://ir.semi.ac.cn/handle/172111/11778

http://www.irgrid.ac.cn/handle/1471x/64859

Idioma(s)

英语

Fonte

Zhang ZY; Meng XQ; Jin P; Li CM; Qu SC; Xu B; Ye XL; Wang ZG .A novel application to quantum dot materials to the active region of superluminescent diodes ,JOURNAL OF CRYSTAL GROWTH,2002 ,243 (1):25-29

Palavras-Chave #半导体材料 #atomic force microscopy #low dimensional structures #quantum dots #strain #molecular beam epitaxy #superluminescent diodes #1.3 MU-M #HIGH-POWER #INTEGRATED ABSORBER #INAS ISLANDS #SPECTRUM #WINDOW #LAYER #SIZE
Tipo

期刊论文