Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency


Autoria(s): Guo X; Shen GD; Wang GH; Zhu WJ; Du JY; Gao G; Zou DS; Chen YH; Ma XY; Chen LH
Data(s)

2001

Resumo

Tunnel-regenerated multiple-active-region (TRMAR) light-emitting diodes (LEDs) with high quantum efficiency and high brightness have been proposed and fabricated. We have proved experimentally that the efficiency of the electrical luminescence and the on-axis luminous intensity of such TRMAR LEDs scaled linearly approximately with the number of the active regions. The on-axis luminous intensity of such TRMAR LEDs with only 3 mum GaP current spreading layer have exceeded 5 cd at 20 mA dc operation under 15 degrees package. The high-quantum-efficiency and high-brightness LEDs under the low injection level were realized. (C) 2001 American Institute of Physics.

Identificador

http://ir.semi.ac.cn/handle/172111/12074

http://www.irgrid.ac.cn/handle/1471x/65007

Idioma(s)

英语

Fonte

Guo X; Shen GD; Wang GH; Zhu WJ; Du JY; Gao G; Zou DS; Chen YH; Ma XY; Chen LH .Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency ,APPLIED PHYSICS LETTERS,2001 ,79(18):2985-2986

Palavras-Chave #半导体物理
Tipo

期刊论文