Acoustic transport of charge and spins in GaAs-based heterostructures

Report for the scientific sojourn carried out at the Paul Drude Institut für Festkörperelektronik of the Stanford University, USA, from 2010 to 2012. The objective of this project is the transport and control of electronic charge and spin along GaAs-based semiconductor heterostructures. The electronic transport has been achieved by taking advantage of the piezolectric field induced by surface acoustic waves in non-centrosymmetric materials like GaAs. This piezolectric field separates photogenerated electrons and holes at different positions along the acoustic wave, where they acummulate and are transported at the same velocity as the wave. Two different kinds of structures have been studied: quantum wells grown along the (110) direction, both intrinsic and n-doped, as well as GaAs nanowires. The analysis of the charge acoustic transport was performed by micro-photoluminescence, whereas the detection of the spin transport was done either by analyzing the polarization state of the emitted photoluminescence or by Kerr reflectometry. Our results in GaAs quantum wells show that charge and spin transport is clearly observed at the non-doped structures,obtaining spin lifetimes of the order of several nanoseconds, whereas no acoutically induced spin transport was detected for the n-doped quantum wells. In the GaAs nanowires, we were able of transporting successfully both electrons and holes along the nanowire axis, but no conservation of the spin polarization has been observed until now. The photoluminescence emitted by these structures after acoustic transport, however, shows anti-bunching characteristics, making this system a very good candidate for its use as single photon emitters.

Blackbody emission under laser excitation of silicon nanopowder produced by plasma-enhanced chemical-vapor deposition

Previous results concerning radiative emission under laser irradiation of silicon nanopowder are reinterpreted in terms of thermal emission. A model is developed that considers the particles in the powder as independent, so under vacuum the only dissipation mechanism is thermal radiation. The supralinear dependence observed between the intensity of the emitted radiation and laser power is predicted by the model, as is the exponential quenching when the gas pressure around the sample increases. The analysis allows us to determine the sample temperature. The local heating of the sample has been assessed independently by the position of the transverse optical Raman mode. Finally, it is suggested that the photoluminescence observed in porous silicon and similar materials could, in some cases, be blackbody radiation

Gas collisions and pressure quenching of the photoluminescence of silicon nanopowder grown by plasma-enhanced chemical vapor deposition

The quenching of the photoluminescence of Si nanopowder grown by plasma-enhanced chemical vapor deposition due to pressure was measured for various gases ( H2, O2, N2, He, Ne, Ar, and Kr) and at different temperatures. The characteristic pressure, P0, of the general dependence I(P)=I0exp(-P/P0) is gas and temperature dependent. However, when the number of gas collisions is taken as the variable instead of pressure, then the quenching is the same within a gas family (mono- or diatomic) and it is temperature independent. So it is concluded that the effect depends on the number of gas collisions irrespective of the nature of the gas or its temperature

Blackbody emission under laser excitation of silicon nanopowder produced by plasma-enhanced chemical-vapor deposition

Previous results concerning radiative emission under laser irradiation of silicon nanopowder are reinterpreted in terms of thermal emission. A model is developed that considers the particles in the powder as independent, so under vacuum the only dissipation mechanism is thermal radiation. The supralinear dependence observed between the intensity of the emitted radiation and laser power is predicted by the model, as is the exponential quenching when the gas pressure around the sample increases. The analysis allows us to determine the sample temperature. The local heating of the sample has been assessed independently by the position of the transverse optical Raman mode. Finally, it is suggested that the photoluminescence observed in porous silicon and similar materials could, in some cases, be blackbody radiation

Gas collisions and pressure quenching of the photoluminescence of silicon nanopowder grown by plasma-enhanced chemical vapor deposition

The quenching of the photoluminescence of Si nanopowder grown by plasma-enhanced chemical vapor deposition due to pressure was measured for various gases ( H2, O2, N2, He, Ne, Ar, and Kr) and at different temperatures. The characteristic pressure, P0, of the general dependence I(P)=I0exp(-P/P0) is gas and temperature dependent. However, when the number of gas collisions is taken as the variable instead of pressure, then the quenching is the same within a gas family (mono- or diatomic) and it is temperature independent. So it is concluded that the effect depends on the number of gas collisions irrespective of the nature of the gas or its temperature

Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy

A series of InxAl1-xAs samples (0.51≪x≪0.55)coherently grown on InP was studied in order to measure the band-gap energy of the lattice matched composition. As the substrate is opaque to the relevant photon energies, a method is developed to calculate the optical absorption coefficient from the photoluminescence excitation spectra. The effect of strain on the band-gap energy has been taken into account. For x=0.532, at 14 K we have obtained Eg0=1549±6 meV

Nanoestruturas luminescentes de Ge e Sn em camadas de SiO/sub 2/ implantadas com íons

Neste trabalho estudam-se as propriedades de nanoestruturas de Ge e Sn formadas em amostras de SiO2/Si(100) através dos processos de implantação iônica e tratamento térmico. A formação de nanocristais de Ge foi investigada em função de tratamentos térmicos em ambiente de N2. Os resultados obtidos foram correlacionados com as propriedades de luminescência das amostras, sendo feita uma discussão sobre os mecanismos atômicos envolvidos no processo de crescimento dos nanocristais de Ge, bem como seus efeitos na criação de centros luminescentes no interior da camada de SiO2, que são responsáveis por intensas bandas de fotoluminescência (PL) nas regiões espectrais do azul-violeta (≈ 3,2 eV) e ultravioleta (≈ 4,2 eV). Além disso, experimentos de irradiação com diferentes íons (He+, Si+, Kr++, Au+) foram realizados antes da implantação do Ge com o objetivo de estudar o efeito de memória que os danos criados pela irradiação apresentam sobre as propriedades estruturais e luminescentes das amostras de SiO2/Si(100) No estudo das amostras de SiO2/Si(100) implantadas com Sn, a síntese de nanopartículas de Sn foi estudada em função da temperatura e do ambiente de tratamento térmico (N2 e vácuo). De maneira pioneira mostrou-se que através da manipulação desses parâmetros é possível formar desde grandes nanocristais bi-fásicos de Sn (≈ 12 a 25 nm) em estruturas concêntricas com núcleo de β-Sn e camada externa de SnOx, até pequenas nanopartículas de Sn com diâmetros de ≈ 2 nm e uniformemente distribuídas ao longo da camada de SiO2. Além disso, observou-se que a evolução estrutural do sistema de nanopartículas de Sn influencia diretamente as características das emissões de PL azul-violeta e UV. Por fim, um outro aspecto das nanoestruturas de Sn foi estudado: a formação de um denso arranjo de ilhas epitaxiais de β-Sn na região de interface SiO2/Si. Este sistema de nano-ilhas, que cresce epitaxialmente, é uniformemente distribuído sobre a superfície do Si, apresentando uma pequena dispersão em tamanho e tendência a se auto-organizar. A criação desse sistema de nano-ilhas epitaxiais através da utilização da implantação iônica é um processo inédito, sendo discutida aqui com base nas propriedades de equilíbrio do sistema Sn-Si.

Propriedade fotoluminescente da ZrO2: Tb+3, Eu+3, Tm+3 obtida pelo método de polimerização de complexos

Recent studies are investigating a new class of inorganic materials which arise as a promising option for high performance applications in the field of photoluminescence. Highlight for rare earth (TR +3 ) doped, which have a high luminous efficiency, long decay time and being able to emit radiation in the visible range, specific to each element. In this study, we synthesized ZrO2: Tb +3 , Eu +3 , Tm +3 nanoparticles complex polymerization method (CPM). We investigated the influences caused by the heat treatment temperature and the content of dopants in zirconia photoluminescent behavior. The particles were calcined at temperature of 400, 500 and 600 ° C for two hours and ranged in concentration of dopants 1, 2, 4 and 8 mol% TR +3 . The samples were characterized by thermal analysis, X-ray diffraction, photoluminescence of measurements and uv-visible of spectroscopies. The results of X-ray diffraction confirmed the formation of the tetragonal and cubic phases in accordance with the content of dopants. The photoluminescence spectra show emission in the region corresponding simultaneous to blue (450 nm), green (550 nm) and red (615 nm). According to the results, ZrO2 particles co-doped with rare earth ions is a promising material white emission with a potential application in the field of photoluminescence

Síntese e Caracterização de Titanatos de Cobalto e Níquel, dopados com Praseodímio, obtidos a partir da decomposição de Nitrilotriacetatos

In recent years, studies about the physicochemical properties of mixed oxides, call attention of the scientific community, properties like as piezoelectricity, photoluminescence, or applications as catalysts, arise in these compounds, when their chemical compositions are modified, in this context some routes are employed in the synthesis of these materials, among which can be cited these methods: ceramic, combustion, co-precipitation, Pechini or polymeric precursor method, hydrothermal, sol-gel; these routes are divided into traditional routes or chemical routes. In this work were synthesized oxides with variable composition, from the thermal decomposition of titanium, cobalt, nickel and praseodymium nitrilotriacetates. The nitrilotriacetates were characterized by IR Spectroscopy (FTIR), Thermogravimetric (TG/ DTG) and Differential Scanning Calorimetry (DSC), while oxides have been characterized by X-ray diffraction (XRD), Spectrofluorimetry and IR Spectroscopy (FTIR). From FTIR data, it was demonstrated that the displacement of the band corresponding to the carboxylate group (νCOOH) at 1712 cm-1, present in nitrilotriacetic acid (H3NTA), for 1680-1545 cm-1, these stretches are characteristics of coordinated nitrilotriacetates, By thermal analysis (TG/DTG /DSC), it was suggested, that in an oxidizing atmosphere (air) oxides are obtained at lower temperatures than in an inert atmosphere N2(g). By results from X-ray Diffraction (XRD), it was determinated that the oxides are crystalline and the predominant phases obtained are summarized titanate phases rutile and ilmenite. By fluorimetry was observed that the intensity of emission bands are directly proportional to the concentration of ions Ni2+, Co2+ and Pr3+, and IR spectroscopy (FTIR) from oxides, demonstrated the disappearance of characteristic bands by nitrilotriacetates, determining the complete decomposition of the nitrilotriacetates in oxides

Photoluminescence in ZrO2 doped with Y and La

O objetivo deste trabalho é descrever a síntese e a caracterização óptica de uma solução sólida de óxido de zircônio contendo ítrio e lantânio. Foram misturados citrato de zircônio, nitrato de ítrio e nitrato de lantânio nas proporções 94 mol% ZrO2-6 mol% Y2O3 e 92 mol% ZrO2-6 mol % Y2O3-2 mol % La2O3. A análise de espectroscopia de absorção no infravermelho com tranformada de Fourier mostra material orgânico em decomposição e a análise térmica mostra a transformação de fases da zircônia tetragonal para monoclínica, a perda de água e a desidroxilação do zircônio. A análise por difração de raios X mostra formação de fases homogênea de ZrO2-Y2O3-La2O3 demonstrando que a adição de lantânio não provoca formação de fases, promovendo uma solução sólida baseada em zircônia cúbica. Os espectros de fotoluminescência mostram bandas de absorção em 562 nm e 572 nm (350 ºC) e bandas de absorção específicas em 543 nm, 561 nm, 614 nm e 641 nm (900 ºC). O efeito fotoluminescente a baixas temperaturas é causado por defeitos como (Y Zr,Y O)', (2Y Zr,V O)'' e V O. As emissões em 614 nm e 641 nm são causadas pela transição O-2p -> Zr-4d. Uma emissão em 543 nm pode ser atribuída a centros LaO8 com transição O-2p -> La-5d.

Investigação das propriedades ópticas e elétricas em alexandrita natural e sintética

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudo das propriedades microestruturais e ópticas do BaMoO4 processado em hidrotermal assistido por microondas

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Síntese, processamento em hidrotermal convencional/microondas e propriedades fotoluminescentes dos pós de BaW 'O IND. 4'

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Desenvolvimento e caracterização de dispositivos luminescentes híbridos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudo das propriedades estruturais e ópticas do sistema vítreo 80TeO2-20WO3 dopado com Yb2O3

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)