Formulación de un plan de desarrollo agropecuario y forestal para una comunidad ejidal del municipio de San Fernando, Chiapas, México

El perfil socioeconómico de Chiapas es primordialmente rural, debiendo reconocerse la diversidad de sus actividades agropecuarias y forestales para generar condiciones específicas de desarrollo. Considerando lo anterior, se realizó esta investigación entre mayo de 1998 y diciembre de 1999, como un estudio de caso sobre los aspectos agropecuarios y forestales más relevantes en el ejido Villa Allende, que expresa problemas ejidales característicos de la región. El ejido cuenta con 3.300 hectáreas, 554 ejidatarios y se ubica en el municipio de San Fernando en la Región Central de Chiapas. Se estudiaron las circunstancias de los ejidatarios, conocimiento local y procesos de trabajo agrícola desde una perspectiva de planeación. A partir de ello se generó el plan de desarrollo, el cual es el primero expuesto en el municipio de San Fernando que se dirige al sector ejidal. Su propósito es plasmar una propuesta general en materia agropecuaria y forestal que pueda ser base para la concertación y que permita vislumbrar opciones dirigidas a mejorar la calidad de vida de los habitantes del ejido Villa Allende. Se postulan las siguientes políticas de desarrollo: 1. Fortalecimiento de la producción y la autosuficiencia alimentaria. 2. Impulso al crecimiento económico. 3. Dotación de infraestructura básica. 4. Reordenamiento agropecuario y forestal con criterios sociales, ecológicos y económicos. 5. Promoción de la salud. Con base en las políticas, se enuncian objetivos programas y subprogramas o proyectos.

Si and SixGe1-x NWs studied by Raman spectroscopy

Group IV nanostructures have attracted a great deal of attention because of their potential applications in optoelectronics and nanodevices. Raman spectroscopy has been extensively used to characterize nanostructures since it provides non destructive information about their size, by the adequate modeling of the phonon confinement effect. The Raman spectrum is also sensitive to other factors, as stress and temperature, which can mix with the size effects borrowing the interpretation of the Raman spectrum. We present herein an analysis of the Raman spectra obtained for Si and SiGe nanowires; the influence of the excitation conditions and the heat dissipation media are discussed in order to optimize the experimental conditions for reliable spectra acquisition and interpretation.

Raman spectrum of group IV nanowires: influence of temperature

Group IV semiconductor nanowires are characterized by Raman spectroscopy. The results are analyzed in terms of the heating induced by the laser beam on the nanowires. By solving the heat transport equation one can simulate the temperature reached by the NWs under the exposure to a laser beam. The results are illustrated with Si and Si1-xGex nanowires. Both bundles of nanowires and individual nanowires are studied. The main experimental conditions contributing to the nanowire heating are discussed

Laser Induced Heating of Group IV Nanowires

Semiconductor nanowires (NWs) are fundamental structures for nanoscale devices. The excitation of NWs with laser beams results in thermal effects that can substantially change the spectral shape of the spectroscopic data. In particular, the interpretation of the Raman spectrum is greatly influenced by excitation induced temperature. A study of the interaction of the NWs with the excitation laser beam is essential to interpret the spectra. We present herein a finite element analysis of the interaction between the laser beam and the NWs. The resultas are applied to the interpretation of the Raman spectrum of bundles of NWs

MicroRaman Spectroscopy of Si Nanowires: Influence of Size

Si Nanowires (NWs) were studied by Raman microspectroscopy. The Raman spectrum of the NWs reveals important thermal effects, which broaden and shift the one phonon Raman bands. The low thermal conductivity of the NWs and the low thermal dissipation are responsible for the temperature enhancement in the NW under the excitation with the laser beam. We have modeled, using finite element methods, the interaction between the laser beam and the NWs. The Raman spectrum of Si NWs is interpreted in terms of the temperature induced by the laser beam excitation, in correlation with finite element methods (fem) for studying the interaction between the laser beam and the NWs.

Evaluation offreeze-thaw damage in concrete by ultrasonic imaging

This work studies the use of ultrasonic imaging as an evaluation tool in concrete subjected to freeze–thaw (F–T) cycles. To evaluate the damage in this deterioration process, ultrasonic velocity and attenuation images have been generated from concrete specimens with and without air-entraining agents. Two parameters have been proposed from these ultrasonic images according to our experimental setup: the non-assessable area proportion (NAAP) and a weighted average velocity in terms of the NAAP. The proposed parameters have been compared with the recommended failure criteria of the ASTM and Rilem standards, which employ ultrasonic contact measurements. The principal advantage of the use of ultrasonic images and the proposed methodology in comparison with the ultrasonic velocity measurements by contact is the possibility of detection of incipient damage caused by accelerated freeze–thaw cycles.

Study of the temperature distribution in Si nanowires under microscopic laser beam excitation

The use of laser beams as excitation sources for the characterization of semiconductor nanowires (NWs) is largely extended. Raman spectroscopy and photoluminescence (PL) are currently applied to the study of NWs. However, NWs are systems with poor thermal conductivity and poor heat dissipation, which result in unintentional heating under the excitation with a focused laser beam with microscopic size, as those usually used in microRaman and microPL experiments. On the other hand, the NWs have subwavelength diameter, which changes the optical absorption with respect to the absorption in bulk materials. Furthermore, the NW diameter is smaller than the laser beam spot, which means that the optical power absorbed by the NW depends on its position inside the laser beam spot. A detailed analysis of the interaction between a microscopic focused laser beam and semiconductor NWs is necessary for the understanding of the experiments involving laser beam excitation of NWs. We present in this work a numerical analysis of the thermal transport in Si NWs, where the heat source is the laser energy locally absorbed by the NW. This analysis takes account of the optical absorption, the thermal conductivity, the dimensions, diameter and length of the NWs, and the immersion medium. Both free standing and heat-sunk NWs are considered. Also, the temperature distribution in ensembles of NWs is discussed. This analysis intends to constitute a tool for the understanding of the thermal phenomena induced by laser beams in semiconductor NWs.

Interaction between a laser beam and semiconductor nanowires: application to the raman spectrum of Si nanowires

One presents in this work the study of the interaction between a focused laser beam and Si nanowires (NWs). The NWs heating induced by the laser beam is studied by solving the heat transfer equation by finite element methods (fem). This analysis permits to establish the temperature distribution inside the NW when it is excited by the laser beam. The overheating is dependent on the dimensions of the NW, both the diameter and the length. When performing optical characterization of the NWs using focused laser beams, one has to consider the temperature increase introduced by the laser beam. An important issue concerns the fact that the NWs diameter has subwavelength dimensions, and is also smaller than the focused laser beam. The analysis of the thermal behaviour of the NWs under the excitation with the laser beam permits the interpretation of the Raman spectra of Si NWs, where it is demonstrated that temperature induced by the laser beam play a major role in shaping the Raman spectrum of Si NWs

Geometría, Estructura y Forma. Centro George Ponpidou

Geometría, Estructura y Forma. Centro George Ponpidou. Jornadas Internacionales de Investigación en Construcción, ?Hitos Estructurales de la Arquitectura y la Ingeniería, Instituto de Ciencias de la Construcción Eduardo Torroja, Consejo Superior de Investigaciones Científicas, Universidad Politécnica de Madrid, Ministerio de Ciencia e Innovación, Madrid, noviembre 2011.

Interaction between a laser beam and semiconductor nanowires: application to the raman spectrum of Si nanowires

One presents in this work the study of the interaction between a focused laser beam and Si nanowires (NWs). The NWs heating induced by the laser beam is studied by solving the heat transfer equation by finite element methods (FEM). This analysis permits to establish the temperature distribution inside the NW when it is excited by the laser beam. The overheating is dependent on the dimensions of the NW, both the diameter and the length. When performing optical characterisation of NWs using focused laser beams, one has to consider the temperature increase introduced by the laser beam. An important issue concerns the fact that the NW's diameter has subwavelength dimensions, and is also smaller than the focused laser beam. The analysis of the thermal behaviour of the NWs under the excitation with the laser beam permits the interpretation of the Raman spectrum of Si NWs. It is demonstrated that the temperature increase induced by the laser beam plays a major role in shaping the Raman spectrum of Si NWs.

Study of the temperature distribution in Si nanowires under microscopic laser beam excitation

Study of the temperature distribution in Si nanowires under microscopic laser beam excitation