MicroRaman Spectroscopy of Si Nanowires: Influence of Size


Autoria(s): Anaya, J.; Prieto, C.; Torres, A.; Martin Martin, A.; Souto, J.; Jiménez, Juan; Rodríguez Domínguez, Andrés; Rodríguez Rodríguez, Tomás
Data(s)

2012

Resumo

Si Nanowires (NWs) were studied by Raman microspectroscopy. The Raman spectrum of the NWs reveals important thermal effects, which broaden and shift the one phonon Raman bands. The low thermal conductivity of the NWs and the low thermal dissipation are responsible for the temperature enhancement in the NW under the excitation with the laser beam. We have modeled, using finite element methods, the interaction between the laser beam and the NWs. The Raman spectrum of Si NWs is interpreted in terms of the temperature induced by the laser beam excitation, in correlation with finite element methods (fem) for studying the interaction between the laser beam and the NWs.

Formato

application/pdf

Identificador

http://oa.upm.es/13254/

Idioma(s)

eng

Publicador

E.T.S.I. Telecomunicación (UPM)

Relação

http://oa.upm.es/13254/2/INVE_MEM_2011_111240.pdf

http://www.scientific.net/MSF.725.255

info:eu-repo/semantics/altIdentifier/doi/10.4028/www.scientific.net/MSF.725.255

Direitos

http://creativecommons.org/licenses/by-nc-nd/3.0/es/

info:eu-repo/semantics/openAccess

Fonte

Materials Science Forum. Proceedings of XIV Defects-Recognition, Imaging and Physics in Semiconductors | XIV Defects-Recognition, Imaging and Physics in Semiconductors | 25/09/2011 - 29/09/2011 | Miyazaki, Japón

Palavras-Chave #Física #Telecomunicaciones
Tipo

info:eu-repo/semantics/conferenceObject

Ponencia en Congreso o Jornada

PeerReviewed