Raman spectrum of group IV nanowires: influence of temperature
| Data(s) |
2011
|
|---|---|
| Resumo |
Group IV semiconductor nanowires are characterized by Raman spectroscopy. The results are analyzed in terms of the heating induced by the laser beam on the nanowires. By solving the heat transport equation one can simulate the temperature reached by the NWs under the exposure to a laser beam. The results are illustrated with Si and Si1-xGex nanowires. Both bundles of nanowires and individual nanowires are studied. The main experimental conditions contributing to the nanowire heating are discussed |
| Formato |
application/pdf |
| Identificador | |
| Idioma(s) |
eng |
| Publicador |
E.T.S.I. Telecomunicación (UPM) |
| Relação |
http://oa.upm.es/13242/2/INVE_MEM_2011_111027.pdf http://dx.doi.org/10.1557/opl.2011.619 info:eu-repo/semantics/altIdentifier/doi/10.1557/opl.2011.619 |
| Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess |
| Fonte |
Proceedings of Materials Research Society Symposium 2011 | Materials Research Society Symposium 2011 | 29/11/2010 - 02/12/2010 | Boston, MA, EEUU |
| Palavras-Chave | #Física #Telecomunicaciones |
| Tipo |
info:eu-repo/semantics/conferenceObject Ponencia en Congreso o Jornada PeerReviewed |
