Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(311)B surfaces

The two-dimensional (2D) ordering of self-assembled InxGa1-xAs quantum dots (QDs) fabricated on GaAs(3 1 1)B surface by molecular beam epitaxy (MBE) are reported. The QDs are aligned into rows differing from the direction of the misorientation of the substrate, and strongly dependent on the mole In content x of InxGa1-As-x solid solution. The ordering alignment deteriorates significantly as the In content is increased to above 0.5. The 2D ordering can be described as a centered rectangular unit mesh with the two sides parallel to [0 1 (1) over bar] and [(2) over bar 3 3], respectively. Their relative arrangement seems to be determined by a combination of the strongly repulsive elastic interaction between the neighboring islands and the minimization of the strain energy of the whole system. The ordering also helps to improve the size homogeneity of the InGaAs islands. The photoluminescence (PL) result demonstrates that QDs grown on (3 1 1)B have the narrowest linewidth and the strongest integrated intensity, compared to those on (1 0 0) and other high-index planes under the same condition. (C) 1999 Elsevier Science B.V. All rights reserved.

黄土旱塬Hybrid-Maize模型适应性及春玉米生产潜力估算

通过对Hybrid-Maize玉米高产模型进行田间验证,应用该模型对黄土旱塬春玉米生产潜力进行初步估算。结果表明,Hybrid-Maize模型在黄土旱塬表现出较好模拟效果,总生物量、秸秆生物量和籽粒产量模拟值与实测值间具有极显著线性相关性,其决定系数分别为0.9469、0.8164和0.9650,回归系数分别为1.0198、0.9787和1.1844,接近于1。黄土旱塬区多年光温生产潜力和气候生产潜力因品种不同有所差别,对多年平均光温籽粒和总生物量生产潜力,紧凑型玉米品种分别为13.25和22.45t/hm2,平展型玉米品种分别为12.32和20.62t/hm2,年际变化小;对多年平均气候籽粒和总生物量生产潜力,紧凑型玉米品种分别为11.97和19.94t/hm2,平展型玉米品种分别为11.37和18.63t/hm2,年际波动大。在黄土旱塬区,玉米产量潜力挖掘的主要途径应集中在提高密度和水分限制条件下,Hybrid-Maize玉米模型在指导玉米高产栽培上具有较好应用。

采用PECVD方法制作SiO2绝缘层的AlGaN/GaN MOS-HFET器件

为了进一步减小栅漏电,提高击穿电压,将MOS结构的优点引入ALGaN/GaN HEMT器件中,研制并分析了新型的基于AlGaN/GaN的 MOS-HFET结构.采用等离子增强气相化学沉积(PECVD)的方法生长了50 nm的SiO2作为栅绝缘层,新型的AlGaN/GaN MOS-HFET器件栅长1 μm,栅宽80 μm,测得最大饱和输出电流为784 mA/mm,最大跨导为44.25 ms/mm,最高栅偏压+6 V.

Monolithic Integration of Electro-Absorption Modulators and DFB Lasers by Modified Double Stack Active Layer Approach

Monolithic electro-absorption modulated distributed-feedback(DFB) lasers are proposed and fabricated by using a modified double stack active layer.The 38mA threshold,9dB extinction ratio (from 0.5V to 3.0V),and about 5mW output power at the 100mA operation current are achieved.Compared with other reported results (only 1.5mW at the same operation current) of the traditional stack active structure,the proposed structure improves the output power of devices.

混沌激光对非本征光导型探测器的混沌干扰机制

在唯象理论和二能级模型下，根据级联非线性系统原理，通过求解载流子输运动力学方程的Lyaponov指数，对混沌激光辐照下非本征光电导的混沌干扰机制进行了研究。结果表明

SiC材料及器件研制的进展

作为第三代的半导体材料—SiC具有禁带宽度大、热导率高、电子的饱和漂移速度大、临界击穿电场高和介电常数低等特点，在高频、大功率、耐高温、抗辐照的半导体器件及紫外探测器和短波发光二极管等方面具有广泛的应用前景。文章综述了半导体SiC材料生长及其器件研制的概况。