ELECTRONIC-STRUCTURE AND FORMATION OF MOSI2 SILICIDES

Autoria(s): LI BQ; JI MR; WU JX; HSU CC; YIAN J
Data(s)

1990
Identificador

http://ir.semi.ac.cn/handle/172111/14379

http://www.irgrid.ac.cn/handle/1471x/101224
Idioma(s)

英语
Fonte

LI BQ; JI MR; WU JX; HSU CC; YIAN J.ELECTRONIC-STRUCTURE AND FORMATION OF MOSI2 SILICIDES,CHINESE PHYSICS ,1990,10(2):481-487
Palavras-Chave #半导体物理
Tipo

期刊论文
Acesso ao item digital