Monolithic Integration of Electro-Absorption Modulators and DFB Lasers by Modified Double Stack Active Layer Approach
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2004
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Resumo |
Monolithic electro-absorption modulated distributed-feedback(DFB) lasers are proposed and fabricated by using a modified double stack active layer.The 38mA threshold,9dB extinction ratio (from 0.5V to 3.0V),and about 5mW output power at the 100mA operation current are achieved.Compared with other reported results (only 1.5mW at the same operation current) of the traditional stack active structure,the proposed structure improves the output power of devices. Monolithic electro-absorption modulated distributed-feedback(DFB) lasers are proposed and fabricated by using a modified double stack active layer.The 38mA threshold,9dB extinction ratio (from 0.5V to 3.0V),and about 5mW output power at the 100mA operation current are achieved.Compared with other reported results (only 1.5mW at the same operation current) of the traditional stack active structure,the proposed structure improves the output power of devices. 于2010-11-23批量导入 zhangdi于2010-11-23 13:06:03导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-23T05:06:03Z (GMT). No. of bitstreams: 1 4697.pdf: 221581 bytes, checksum: c2b01fe58db6d46a3d8ef63370fde8e0 (MD5) Previous issue date: 2004 国家重点基础研究发展规划,国家自然科学基金 中科院半导体所National Center of Optoelectronics Technology 国家重点基础研究发展规划,国家自然科学基金 |
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Idioma(s) |
英语 |
Fonte |
Hu Xiaohua;Li Baoxia;Zhu Hongliang;Wang Baojun;Zhao Lingjuan;Wang Lufeng;Wang Wei.Monolithic Integration of Electro-Absorption Modulators and DFB Lasers by Modified Double Stack Active Layer Approach,半导体学报,2004,25(5):481-485 |
Palavras-Chave | #半导体材料 |
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期刊论文 |