Monolithic Integration of Electro-Absorption Modulators and DFB Lasers by Modified Double Stack Active Layer Approach


Autoria(s): Hu Xiaohua; Li Baoxia; Zhu Hongliang; Wang Baojun; Zhao Lingjuan; Wang Lufeng; Wang Wei
Data(s)

2004

Resumo

Monolithic electro-absorption modulated distributed-feedback(DFB) lasers are proposed and fabricated by using a modified double stack active layer.The 38mA threshold,9dB extinction ratio (from 0.5V to 3.0V),and about 5mW output power at the 100mA operation current are achieved.Compared with other reported results (only 1.5mW at the same operation current) of the traditional stack active structure,the proposed structure improves the output power of devices.

Monolithic electro-absorption modulated distributed-feedback(DFB) lasers are proposed and fabricated by using a modified double stack active layer.The 38mA threshold,9dB extinction ratio (from 0.5V to 3.0V),and about 5mW output power at the 100mA operation current are achieved.Compared with other reported results (only 1.5mW at the same operation current) of the traditional stack active structure,the proposed structure improves the output power of devices.

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国家重点基础研究发展规划,国家自然科学基金

中科院半导体所National Center of Optoelectronics Technology

国家重点基础研究发展规划,国家自然科学基金

Identificador

http://ir.semi.ac.cn/handle/172111/17361

http://www.irgrid.ac.cn/handle/1471x/103318

Idioma(s)

英语

Fonte

Hu Xiaohua;Li Baoxia;Zhu Hongliang;Wang Baojun;Zhao Lingjuan;Wang Lufeng;Wang Wei.Monolithic Integration of Electro-Absorption Modulators and DFB Lasers by Modified Double Stack Active Layer Approach,半导体学报,2004,25(5):481-485

Palavras-Chave #半导体材料
Tipo

期刊论文