Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling

The depth distribution of the strain-related tetragonal distortion e(T) in the GaN epilayer with low-temperature AlN interlayer (LT-AlN IL) on Si(111) substrate is investigated by Rutherford backscattering and channeling. The samples with the LT-AlN IL of 8 and 16 nm thickness are studied, which are also compared with the sample without the LT-AlN IL. For the sample with 16-nm-thick LT-AlN IL, it is found that there exists a step-down of e(T) of about 0.1% in the strain distribution. Meanwhile, the angular scan around the normal GaN <0001> axis shows a tilt difference about 0.01degrees between the two parts of GaN separated by the LT-AlN IL, which means that these two GaN layers are partially decoupled by the AlN interlayer. However, for the sample with 8-nm-thick LT-AlN IL, neither step-down of e(T) nor the decoupling phenomenon is found. The 0.01degrees decoupled angle in the sample with 16-nm-thick LT-AlN IL confirms the relaxation of the LT-AlN IL. Thus the step-down of e(T) should result from the compressive strain compensation brought by the relaxed AlN interlayer. It is concluded that the strain compensation effect will occur only when the thickness of the LT-AlN IL is beyond a critical thickness. (C) 2004 American Institute of Physics.

Room-temperature continuous-wave operation of InAs quantum-wire laser on InP(001) substrate

A self-assembled quantum-wire laser structure was grown by solid-source molecular beam epitaxy in an InAlGaAs-InAlAs matrix oil InP(001) substrate. Ridge-waveguide lasers were fabricated and demonstrated to operate at a heatsink temperature tip to 330 K in continuous-wave (CW) mode. The emission wavelength of the lasers with 5 mm-long cavity was 1.713 mu m at room temperature in CW mode. The temperature stability of the devices was analysed and the characteristic temperature was found to be 47 K in the mnge of 220-320 K.

Influence of the cavity on the low-temperature photoluminescence of SiGe/Si multiquantum wells grown on a silicon-on-insulator substrate

The influences of the cavity on the low-temperature photoluminescence of Si0.59Ge0.41/Si multiquantum wells grown on silicon-on-insulator substrates are discussed. The positions of the modulated photoluminescence (PL) peaks not only relate to the nature of SiGe/Si multiquantum wells, but also relate to the characteristic of the cavity. With increasing temperature, a redshift of the modulated PL peak originating from the thermo-optical effect of the cavity is observed.

Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate

Various low-temperature (LT) ultra-thin buffer layers have been fabricated on the GaAs (001) substrate. The buffer layer is decoupled from the host substrate by introducing low-temperature defects. The 400 nm In0.25Ga0.75As films were grown on these substrates to test the 'compliant' effects of the buffer layers. Atomic force microscopy, photoluminescence, double crystal x-ray diffraction and transmission electron microscopy were used to estimate the quality of the ln(0.25)Ga(0.75)As layer. The measurements indicated that the misfit strains in the epilayer can be accommodated by the LT ultra-thin buffer layer. The strain accommodation effects of the LT defects have been discussed in detail.

Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate

Quaternary InAlGaN film has been grown directly on top of low-temperature-deposited GaN buffer layer by low-pressure metalorganic vapor phase epitaxy. High-resolution X-ray diffraction and photoluminescence (PL) results show that the film has good crystal quality and optical property. Temperature-dependent PL and time-resolved PL (TRPL) have been employed to study the carriers recombination dynamics in the film. The TRPL signals can be well fitted as a stretched exponential function exp[-(t/tau)(beta)] from 14 to 250 K, indicating that the emission is attributed to the radiative recombination of excitons localized in disorder quantum nanostructures such as quantum disks originating from indium (In) clusters or In composition fluctuation. The cross-sectional high-resolution electron microscopy measurement further proves that there exist the disorder quantum nanostructures in the quaternary. By investigating the dependence of the exponential parameter beta on the temperature, it is shown that the multiple trapping-detrapping mechanism dominates the diffusion among the localized states. The localized states are considered to have two-dimensional density of states (DOS) at 250 K, since radiative recombination lifetime tau(r) increases linearly with increasing temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate

High-quality In0.25Ga0.75As films were grown on low-temperature (LT) ultra-thin GaAs buffer layers formed on GaAs (0 0 1) substrate by molecular beam epitaxy. The epilayers were studied by atomic force microscopy (AFM), photo luminescence (PL) and double crystal X-ray diffraction (DCXRD), All the measurements indicated that LT thin buffer layer technique is a simple but powerful growth technique for heteroepitaxy. (C) 2002 Elsevier Science B.V. All rights reserved.

Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate

The effect of the growth temperature on the properties of InAlAs/AlGaAs quantum dots grown on GaAs(100) substrates is investigated. The optical efficiency and structural uniformity are improved by increasing the growth temperature from 530 to 560 degreesC. The improvements of InAlAs/AlGaAs quantum-dot characteristics could be explained by suppressing the incorporation of oxygen and the formation of group-III vacancies. Furthermore, edge-emitting laser diodes with six quantum-dot layers grown at 560 degreesC have been fabricated. Lasing occurs via the ground state at 725 nm, with a room-temperature threshold current density of 3.9 kA/cm(2), significantly better than previously reported values for this quantum-dot systems. (C) 2002 American Institute of Physics.

Room temperature 1.55 mu m emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy

Self-assembled InAs nanostructures on (0 0 1)InP substrate have been grown by molecular beam epitaxy (MBE) and evaluated by transmission electron microscopy (TEM) and photoluminescence (PL). It is found that the morphologies of InAs nanostructures depend strongly on the underlying alloy. Through introducing a lattice-matched underlying InAlGaAs layer on InAlAs buffer layer, the InAs quantum dots (QDs) can be much more uniform in size and great improvement in PL properties can be attained at the same time. In particular, 1.55 mu m luminescence at room temperature (RT) can be realized in InAs QDs deposited on (0 0 1)InP substrate with underlying InAlGaAs layer. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate

GaN buffer layers (thickness ～60nm) grown on GaAs(001) by low-temperature MOCVD are investigated by X-ray diffraction pole figure measurements using synchrotron radiation in order to understand the heteroepitaxial growth features of GaN on GaAs(001) substrates. In addition to the epitaxially aligned crystallites,their corresponding twins of the first and the second order are found in the X-ray diffraction pole figures. Moreover, { 111 } q scans with χ at 55° reveal the abnormal distribution of Bragg diffractions. The extra intensity maxima in the pole fig ures shows that the process of twinning plays a dominating role during the growth process. It is suggested that the polarity of { 111 } facets emerged on (001) surface will affect the growth-twin nucleation at the initial stages of GaN growth on GaAs(001) substrates. It is proposed that twinning is prone to occurring on { 111 } B, N-terminated facets.

The temperature-dependent spectral properties of filter substrate materials in the far-infrared (6-40 mu m)

This paper presents the experimental results on the low temperature absorption and dispersion properties for a variety of frequently used infrared filter substrate materials. Index of refraction (n) and transmission spectra are presented for a range of temperatures 300-50 K for the Group IV materials silicon (Si) and germanium (Ge), and Group II-VI materials zinc selenide (ZnSe), zinc sulphide (ZnS) and cadmium telluride (CdTe). (C) 2003 Elsevier B.V. All rights reserved.

Using Distributed Temperature Sensing to monitor field scale dynamics of ground surface temperature and related substrate heat flux

We present one of the first studies of the use of Distributed Temperature Sensing (DTS) along fibre-optic cables to purposely monitor spatial and temporal variations in ground surface temperature (GST) and soil temperature, and provide an estimate of the heat flux at the base of the canopy layer and in the soil. Our field site was at a groundwater-fed wet meadow in the Netherlands covered by a canopy layer (between 0-0.5 m thickness) consisting of grass and sedges. At this site, we ran a single cable across the surface in parallel 40 m sections spaced by 2 m, to create a 40×40 m monitoring field for GST. We also buried a short length (≈10 m) of cable to depth of 0.1±0.02 m to measure soil temperature. We monitored the temperature along the entire cable continuously over a two-day period and captured the diurnal course of GST, and how it was affected by rainfall and canopy structure. The diurnal GST range, as observed by the DTS system, varied between 20.94 and 35.08◦C; precipitation events acted to suppress the range of GST. The spatial distribution of GST correlated with canopy vegetation height during both day and night. Using estimates of thermal inertia, combined with a harmonic analysis of GST and soil temperature, substrate and soil-heat fluxes were determined. Our observations demonstrate how the use of DTS shows great promise in better characterising area-average substrate/soil heat flux, their spatiotemporal variability, and how this variability is affected by canopy structure. The DTS system is able to provide a much richer data set than could be obtained from point temperature sensors. Furthermore, substrate heat fluxes derived from GST measurements may be able to provide improved closure of the land surface energy balance in micrometeorological field studies. This will enhance our understanding of how hydrometeorological processes interact with near-surface heat fluxes.

Preparation, characterization and dielectric properties of temperature stable SrTiO3/PEEK composites for microwave substrate applications

Poly(ether ether ketone) (PEEK) is a potential candidate for electronic applications due to its low permittivity, low loss, high melting point, better chemical resistance, excellent insulating properties and easy processibility. Present paper discusses the preparation and characterization of SrTiO3 filled PEEK composite for microwave substrate applications. The dielectric constant, dielectric loss and temperature variation of dielectric constant of the composites have been studied up to 1 MHz using an Impedance Analyzer. Different theoretical approaches have been employed to predict the effective permittivity of composite systems and the results are compared with that of the experimental data. The crystallinity of the bulk composite is studied by X-ray diffraction studies. Scanning electron microscopic technique has been employed to study the dispersion of the particulate filler in PEEK matrix. Vickers hardness of pure and filled PEEK composite has been measured using Microhardness Tester. The effect of particle size on the dielectric as well as mechanical properties of SrTiO3/PEEK composite system is also studied by incorporating micronsize and nanosize fillers. Present study shows that a temperature stable composite can be realized by judiciously selecting appropriate filler concentration in the PEEK matrix.

Substrate and Temperature Effects on the Germination of Dypsis leptocheilos (Hodel) Beentje & J. Dransf. (Arecaceae) Seeds

Dypsis leptocheilos is highly valued as an ornamental palm. Its propagation is done by seeds; however, there is little information about this process. The objective of this work was to study the substrate and temperature effects on the germination of D. leptocheilos seeds. The experiments were carried out at FCAV/UNESP, Campus of Jaboticabal, São Paulo State, Brazil. In order to study the substrate effects, four treatments were arranged (coconut fiber, sand, vermiculite and Plantmax (R)) at 30 degrees C. For the temperature effects, six treatments were performed (temperature at laboratory conditions (21.5 degrees C and 72% RU), 25 degrees C, 30 degrees C, 35 degrees C, 20-30 degrees C and 25-35 degrees C), having the coconut fiber as the substrate. The experimental design was completely randomized, with four replicates of 25 disseminules per plot (seeds with attached endocarp). Water replacement was managed to maintain 100% of the retention capacity of the substrates. The germination tests were observed every two days, and conducted over 148 days for the substrate effects, and over 152 days for the temperature effects, when no more seed germination was noted. In order to determine the germination percentage (% G) and the Germination Speed Index (GSI), the seed was considered germinated when the germinative button appeared. At the end of the experiments, leaf area (cm(2)), root and shoot length (cm), root and shoot dry mass (g) were also obtained. Statistical analysis was performed and means were compared by the Tukey test. Germination rate and speed in coconut fiber was higher at 25 and 30 degrees C. However, when other substrates were tested at 30 degrees C, the highest germination percentage was observed in vermiculite, which also sustained better results for the seed germination and for the characteristics related to shoots and roots.

Effects of substrate and temperature on the emergence of Phacelia sp. (Boraginaceae) seedling

This study aimed to define the best substrate and temperature for the emergence of Phacelia sp. seedling, annual ornamental flower gardens. The experimental design was entirely randomized in a factorial scheme 37 (three different types of substrates: vermiculite, sand and sphagnum combined with seven temperature conditions: room temperature, constant at 20, 25, 30 and 35C, and alternated at 20-30C and 25-35C) with 4 replications of 100 seeds each. Emergence (%E) and Emergence Rate (ER) were evaluated. The means of the resulting values were then compared by the Tukey test at 5% confidence level. There was a significant interaction amongst substrates and temperatures for all analyzed variables. For seeds sown in vermiculite and sand, the seedlings had higher %E and emerged fastest at 20C, room temperature and 20-30C that did not present statistically significant data. In sphagnum, seedlings showed greater %E in the alternated at 20-30C, room temperature and 20C and emerged quickly at room temperature and 20C that did not present statistically significant data. At room temperature and 20C, the seedlings had higher %E and emerged faster in vermiculite and sand that did not present statistically significant data. At 25, 30 and 25-35C, the seedlings showed better %E and emerged fastest in sand. At 35C, the seedlings showed either in vermiculite and sand were not significantly different in their emergence, but emerged faster in sand. There was not significantly different among substrates in their emergence at 20-30C, but the seedlings emerged faster in vermiculite and sand. It was concluded that the Phacelia sp. seedlings in all substrates showed greater %E at room temperature, 20C and 20-30C. For all temperatures, the seedlings growth parameters were superior when seeds were sown in sand.