Room-temperature continuous-wave operation of InAs quantum-wire laser on InP(001) substrate
| Data(s) |
2006
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|---|---|
| Resumo |
A self-assembled quantum-wire laser structure was grown by solid-source molecular beam epitaxy in an InAlGaAs-InAlAs matrix oil InP(001) substrate. Ridge-waveguide lasers were fabricated and demonstrated to operate at a heatsink temperature tip to 330 K in continuous-wave (CW) mode. The emission wavelength of the lasers with 5 mm-long cavity was 1.713 mu m at room temperature in CW mode. The temperature stability of the devices was analysed and the characteristic temperature was found to be 47 K in the mnge of 220-320 K. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Yang XR (Yang X. R.); Xu B (Xu B.); Wang ZG (Wang Z. G.); Jin P (Jin P.); Liang P (Liang P.); Hu Y (Hu Y.); Sun H (Sun H.); Chen YH (Chen Y. H.); Liu FL (Liu F. L.) .Room-temperature continuous-wave operation of InAs quantum-wire laser on InP(001) substrate ,ELECTRONICS LETTERS,2006 ,42(13):757-758 |
| Palavras-Chave | #半导体材料 #DOTS |
| Tipo |
期刊论文 |
